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    MMBT6427 Price and Stock

    onsemi MMBT6427LT1G

    TRANS NPN DARL 40V 0.5A SOT23-3
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    Quest Components MMBT6427LT1G 8,448
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    onsemi SMMBT6427LT1G

    TRANS NPN DARL 40V 0.5A SOT23-3
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    DigiKey SMMBT6427LT1G Cut Tape 28,119 1
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    SMMBT6427LT1G Digi-Reel 28,119 1
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    SMMBT6427LT1G Reel 21,000 3,000
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    Diodes Incorporated MMBT6427-7-F

    TRANS NPN DARL 40V 0.5A SOT23-3
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    onsemi MMBT6427

    TRANS NPN DARL 40V 1.2A SOT23-3
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    DigiKey MMBT6427 Digi-Reel 1
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    onsemi MMBT6427LT1

    TRANS NPN DARL 40V 0.5A SOT23
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    MMBT6427LT1 3,780
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    MMBT6427LT1 2,384
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    MMBT6427 Datasheets (30)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MMBT6427 Diodes TRANS DARLINGTON BJT NPN 40V 0.5A 3SOT-23 Original PDF
    MMBT6427 Diodes Short Form Selection Guide Original PDF
    MMBT6427 Diodes NPN SURFACE MOUNT DARLINGTON TRANSISTOR Original PDF
    MMBT6427 Fairchild Semiconductor NPN Darlington Transistor Original PDF
    MMBT6427 Fairchild Semiconductor NPN Darlington Transistor Original PDF
    MMBT6427 Sinyork Mini size of Discrete semiconductor elements Original PDF
    MMBT6427 Motorola European Master Selection Guide 1986 Scan PDF
    MMBT6427 Motorola NPN silicon darlington transistor. Scan PDF
    MMBT6427 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    MMBT6427 National Semiconductor Surface Mount Transistors Scan PDF
    MMBT6427 National Semiconductor NPN Darlington Transistor Scan PDF
    MMBT6427 National Semiconductor NPN Darlington Transistor Scan PDF
    MMBT6427 Samsung Electronics NPN (DARLINGTON TRANSISTOR) Scan PDF
    MMBT6427 Transys Electronics Darlington Bipolar Transistor, NPN, 40V, SOT-23, 3-Pin Scan PDF
    MMBT6427 Vishay NPN SURFACE MOUNT DARLINGTON TRANSISTOR Scan PDF
    MMBT6427-7 Diodes NPN Surface Mount Darlington Transistor Original PDF
    MMBT6427-7 Diodes NPN SURFACE MOUNT DARLINGTON TRANSISTOR Original PDF
    MMBT6427-7-F Diodes TRANS DARLINGTON BJT NPN 40V 0.5A 3SOT-23 Original PDF
    MMBT6427-7-F Diodes TRANS DARL NPN 40V SMD SOT23 Original PDF
    MMBT6427L On Semiconductor Small Signal Darlington Original PDF

    MMBT6427 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MMBT6427

    Abstract: No abstract text available
    Text: MMBT6427 NPN Transistors Darlington Amplifier COLLECTOR 3 * We declare that the material of product compliance with RoHS requirements. BASE 1 P b Lead Pb -Free EMITTER 2 MAXIMUM RATINGS Rating Symbol V alue Unit Collector–Emitter Voltage V CEO 40 Vdc Collector–Base Voltage


    Original
    PDF MMBT6427 OT-23 21-Dec-07 OT-23 MMBT6427

    SOD123

    Abstract: marking pa sot-363
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Darlington Transistor MMBT6427LT1 NPN Silicon COLLECTOR 3 Motorola Preferred Device BASE 1 3 EMITTER 2 1 MAXIMUM RATINGS 2 Rating Symbol Value Unit Collector – Emitter Voltage VCEO 40 Vdc Collector – Base Voltage VCBO


    Original
    PDF MMBT6427LT1 236AB) SOD123 marking pa sot-363

    BCV47

    Abstract: No abstract text available
    Text: BCV27 IS OBSOLETE PLEASE USE MMBT6427 BCV47 IS CURRENTLY ACTIVE BCV27 BCV47 SOT23 NPN SILICON PLANAR DARLINGTON TRANSISTORS ISSUE 3 – SEPTEMBER 1995 ✪ FEATURES * High VCEO * Low saturation voltage COMPLEMENTARY TYPES – BCV27 – BCV28 BCV47 – BCV48 E C


    Original
    PDF BCV27 MMBT6427 BCV47 BCV27 BCV28 BCV47 BCV48

    Untitled

    Abstract: No abstract text available
    Text: SMD Darlington Transistors Part No. MMBTA13 MMBTA14 MMBT6427 20070515 VCE sat & VBE(sat) hFE @ VCE & IC fT @ VCE & IC Pack@ IC & I B VCEO IC Device age Polarity Marking VCE IC Max. Max. IC IB Min. Max. VCE IC Code Min. Max. 7" (V) (A) (V) (mA) (V) (V) (mA) (mA) (MHz)(MHz) (V) (mA) Reel


    Original
    PDF MMBTA13 MMBTA14 MMBT6427

    NPN 300 VOLTS vce POWER TRANSISTOR

    Abstract: SMMBT6427LT1G
    Text: MMBT6427LT1G, MMBT6427LT1G Darlington Transistor NPN Silicon http://onsemi.com Features • AEC−Q101 Qualified and PPAP Capable  S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements  These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS


    Original
    PDF MMBT6427LT1G, SMMBT6427LT1G AEC-Q101 MMBT6427LT1/D NPN 300 VOLTS vce POWER TRANSISTOR

    Untitled

    Abstract: No abstract text available
    Text: Darlington Transistors NPN Silicon MMBT6427LT1 3 COLLECTOR 1 BASE 3 2 EMITTER 1 MAXIMUM RATINGS Rating 2 Symbol Value Unit Collector–Emitter Voltage V CEO 40 Vdc Collector–Base Voltage V CBO 40 Vdc Emitter–Base Voltage V 12 Vdc 500 mAdc Collector Current — Continuous


    Original
    PDF MMBT6427LT1 236AB)

    KSH200

    Abstract: BUD620 BUD87 MMBT6427 MMBTA13 MMBTA14 MMBTA63 MMBTA64 TD13002 TD13003
    Text: Surface Mount Darlington Transistors hFE Part No., Marking Code and Polarity VCEO NPN MMBT6427 TMPT6427 MMBTA13 MMBTA14 - IC MMBTA63 MMBTA64 V (A) 40 40 30 30 30 30 0.5 0.5 0.3 0.3 0.5 0.5 2U 2V V C E(sat) & V B E(sat) @ I C & IB fT @ VCE & IC Package PNP


    Original
    PDF MMBTA63 MMBTA64 MMBT6427 TMPT6427 MMBTA13 MMBTA14 MMBT3640 KSH200 BUD620 BUD87 MMBT6427 MMBTA13 MMBTA14 MMBTA63 MMBTA64 TD13002 TD13003

    MMBT6427LT1

    Abstract: 50K MARKING SOT23
    Text: ON Semiconductort Darlington Transistor MMBT6427LT1 NPN Silicon ON Semiconductor Preferred Device MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO 40 Vdc Collector–Base Voltage VCBO 40 Vdc Emitter–Base Voltage VEBO 12 Vdc IC 500


    Original
    PDF MMBT6427LT1 r14525 MMBT6427LT1/D MMBT6427LT1 50K MARKING SOT23

    2N6427

    Abstract: CBVK741B019 F63TNR MMBT6427 MPSA14 PN2222N sot23 mark code e2 MPS-A14
    Text: 2N6427 / MMBT6427 2N6427 MMBT6427 C E C B TO-92 B SOT-23 E Mark: 1V NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at collector currents to 1.0 A. Sourced from Process 05. See MPSA14 for characteristics.


    Original
    PDF 2N6427 MMBT6427 2N6427 OT-23 MPSA14 CBVK741B019 F63TNR MMBT6427 PN2222N sot23 mark code e2 MPS-A14

    J-STD-020D

    Abstract: MMBT6427 MMBT6427-7-F
    Text: MMBT6427 NPN SURFACE MOUNT DARLINGTON TRANSISTOR Please click here to visit our online spice models database. Features • • • • Epitaxial Planar Die Construction Ideal for Low Power Amplification and Switching High Current Gain Lead, Halogen and Antimony Free, RoHS Compliant


    Original
    PDF MMBT6427 OT-23 J-STD-020D MIL-STD-202, DS30048 J-STD-020D MMBT6427 MMBT6427-7-F

    MMBT6427

    Abstract: No abstract text available
    Text: MMBT6427 NPN SURFACE MOUNT DARLINGTON TRANSISTOR Features • · · Epitaxial Planar Die Construction Ideal for Medium Power Amplification and Switching High Current Gain SOT-23 A C TOP VIEW Mechanical Data · · · · · C E B Case: SOT-23, Molded Plastic


    Original
    PDF MMBT6427 OT-23 OT-23, MIL-STD-202, 500mA, 300ms, DS30048 MMBT6427

    Untitled

    Abstract: No abstract text available
    Text: Darlington Transistors NPN Silicon MMBT6427LT1 3 COLLECTOR 1 BASE 3 2 EMITTER 1 MAXIMUM RATINGS Rating 2 Symbol Value Unit Collector–Emitter Voltage V CEO 40 Vdc Collector–Base Voltage V CBO 40 Vdc Emitter–Base Voltage V 12 Vdc 500 mAdc Collector Current — Continuous


    Original
    PDF MMBT6427LT1 236AB)

    Untitled

    Abstract: No abstract text available
    Text: MMBT6427LT1 Transistors NPN Darlington Transistor Military/High-RelN V BR CEO (V)40 V(BR)CBO (V)40 I(C) Max. (A)500m Absolute Max. Power Diss. (W)225m Maximum Operating Temp (øC)150õ I(CBO) Max. (A)50n @V(CBO) (V) (Test Condition)30 h(FE) Min. Current gain.10k


    Original
    PDF MMBT6427LT1 Freq130M

    Untitled

    Abstract: No abstract text available
    Text: MMBT6427LT1G, MMBT6427LT1G Darlington Transistor NPN Silicon http://onsemi.com Features • AEC−Q101 Qualified and PPAP Capable  S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements  These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS


    Original
    PDF MMBT6427LT1G, SMMBT6427LT1G MMBT6427LT1/D

    LB 124 transistor

    Abstract: LB 124 d MPQ6427 transistor BC 236 16-SOIC 2N6427 MMBT6427
    Text: 2N6427/MMBT6427/MPQ6427 NATL SEMICOND OISCRETE 11E: D | k 501130 T-33-21 5 ^ N a tio n a l J l A S e m ic o n d u c to r 2N6427 E llllll Ull MMBT6427 MPQ6427* TO “ 236 S O T - 23 T O -9 2 ^ | C =E 10-116 TL/G/10100-7 TL/Q/10100-5 Bc TUG/10100-1 NPN Darlington Transistor


    OCR Scan
    PDF bSD1130 00372b0 T-33-21 2N6427 MMBT6427 MPQ6427* to-236 sot-23) TL/G/10100-7 TL/Q/10100-5 LB 124 transistor LB 124 d MPQ6427 transistor BC 236 16-SOIC

    2N6427

    Abstract: MMBT6427 MPSA14
    Text: N 2N6427 MMBT6427 Mark: 1V NPN Darlington Transistor T his device is designed for applications requiring extrem ely high current gain at collector currents to 1.0 A. Sourced from Process 05. See M PSA14 for characteristics. Absolute Maximum Ratings* ta = 2 5 ° C unless o th e rw ise noted


    OCR Scan
    PDF 2N6427 MMBT6427 MPSA14 MMBT6427

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Darlington Transistor MMBT6427LT1 NPN Silicon COLLECTOR 3 Motorola Preferred Device EMITTER 2 M AXIMUM RATINGS Rating C o llector-E m itter Voltage Symbol Value Unit Vdc Vdc v CEO 40 C o llecto r-B ase Voltage VC B O 40


    OCR Scan
    PDF MMBT6427LT1 O-236AB) T6427LT1

    Untitled

    Abstract: No abstract text available
    Text: M A X IM U M RATINGS Sym bol Value Unit Collector-Emitter Voltage Rating v CEO 40 Vdc Collector-Base Voltage VCBO 40 Vdc Emitter-Base Voltage v EBO 12 Vdc *C 500 m Adc Collector Current — Continuous MMBT6427LT1* CASE 318-07, STYLE 6 SOT-23 TO-236AB Collector 3


    OCR Scan
    PDF MMBT6427LT1* OT-23 O-236AB)

    2N6427

    Abstract: MMBT6427 MPSA14
    Text: 2N6427 I MMBT6427 Discrete POWER & Signal Technologies National S e m i c o n d u c t o r " MMBT6427 2N6427 SOT-23 B Mark: 1V NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at collector currents to 1.0 A. Sourced from


    OCR Scan
    PDF 2N6427 MMBT6427 OT-23 MPSA14 bSG113D 2N6427 MMBT6427

    Untitled

    Abstract: No abstract text available
    Text: 2N6427 MMBT6427 SOT-23 M ark: 1V NPN Darlington Transistor This device is designed for applications requiring extrem ely high current gain at collector currents to 1.0 A. Sourced from Process 05. See M PSA14 for characteristics. Absolute Maximum RâtinÇjS


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    PDF 2N6427 MMBT6427 2N6427 OT-23 PSA14

    Untitled

    Abstract: No abstract text available
    Text: MMBT6427 NPN SURFACE MOUNT DARLINGTON TRANSISTOR Features_ • • • Epitaxial Planar Die Construction Ideal for Medium Power Amplification and Switching High Current Gain SOT-23 H : h-A T TOR VIEW Mechanical Data • • • • •


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    PDF MMBT6427 OT-23 OT-23, MIL-STD-202, 500mA, 300ns, DS30048

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Darlington Transistor MMBT6427LT1 NPN Silicon COLLECTOR 3 Motorola Preferred Device EMITTER 2 MAXIMUM RATINGS Sym b ol Value Unit C ollector-E m itter Voltage v CE O 40 Vdc C o llector-B ase Voltage VC BO 40 Vdc E m itter-B ase Voltage


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    PDF MMBT6427LT1 -236A b3b7255

    MMBT6427

    Abstract: No abstract text available
    Text: MMBT6427 v isH A Y NPN SURFACE MOUNT DARLINGTON TRANSISTOR LITEMZI y POWER SEMICONDUCTOR Features • • • Epitaxial Planar Die Construction Ideal for Medium Power Amplification and Switching High Current Gain SOT-23 -H : h~A TOR VIEW Case: SO T-23, Molded Plastic


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    PDF MMBT6427 OT-23, MIL-STD-202, OT-23 Characteristi00 100mA, 500mA, 300ns, MMBT6427

    2N6427

    Abstract: MMBT6427 MPSA14
    Text: N MMBT6427 2N6427 c TO-92 BE SOT-23 B M ark: 1V NPN Darlington Transistor This device is designed for applications requiring extrem ely high current gain at collector currents to 1.0 A. Sourced from Process 05. See M PSA14 for characteristics. Absolute Maximum Rstinys


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    PDF 2N6427 MMBT6427 OT-23 MPSA14 2N6427 MMBT6427