MMBV3102LT1
Abstract: Diode Capacitance Diode 1
Text: LESHAN RADIO COMPANY, LTD. Silicon Tuning Diode MMBV3102LT1 This device is designed in the Surface Mount package for general frequency controland tuning applications. It provides solid–state reliability in replacement of mechanical tuning 22 pF Nominal 30Volts
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MMBV3102LT1
30Volts
236AB)
20Vdc
MMBV3102LT1
Diode Capacitance
Diode 1
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MMBV3102LT1/D SEMICONDUCTOR TECHNICAL DATA MMBV3102LT1 Silicon Tuning Diode Motorola Preferred Device This device is designed in the Surface Mount package for general frequency control and tuning applications. It provides solid–state reliability in replacement of mechanical
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MMBV3102LT1/D
MMBV3102LT1
236AB)
MMBV3102LT1/D
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Untitled
Abstract: No abstract text available
Text: MMBV3102LT1G Silicon Tuning Diode This device is designed in the Surface Mount package for general frequency control and tuning applications. It provides solid−state reliability in replacement of mechanical tuning methods. Features http://onsemi.com • High Q with Guaranteed Minimum Values at VHF Frequencies
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MMBV3102LT1G
MMBV3102LT1/D
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MMBV3102LT1
Abstract: SMD310 CT 260 K
Text: ON Semiconductort MMBV3102LT1 Silicon Tuning Diode ON Semiconductor Preferred Device This device is designed in the Surface Mount package for general frequency control and tuning applications. It provides solid–state reliability in replacement of mechanical tuning methods.
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MMBV3102LT1
r14525
MMBV3102LT1/D
MMBV3102LT1
SMD310
CT 260 K
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MMBV3102LT1G
Abstract: MMBV3102LT1
Text: MMBV3102LT1 Preferred Device Silicon Tuning Diode This device is designed in the Surface Mount package for general frequency control and tuning applications. It provides solid−state reliability in replacement of mechanical tuning methods. Features http://onsemi.com
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MMBV3102LT1
MMBV3102LT1/D
MMBV3102LT1G
MMBV3102LT1
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MMBV3102LT1/D SEMICONDUCTOR TECHNICAL DATA MMBV3102LT1 Silicon Tuning Diode Motorola Preferred Device This device is designed in the Surface Mount package for general frequency control and tuning applications. It provides solid–state reliability in replacement of mechanical
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MMBV3102LT1/D
MMBV3102LT1
236AB)
MMBV3102LT1/D
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Untitled
Abstract: No abstract text available
Text: ON Semiconductort MMBV3102LT1 Silicon Tuning Diode ON Semiconductor Preferred Device This device is designed in the Surface Mount package for general frequency control and tuning applications. It provides solid−state reliability in replacement of mechanical tuning methods.
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MMBV3102LT1
236AB)
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Untitled
Abstract: No abstract text available
Text: Silicon Tuning Diode This device is designed in the Surface Mount package for MMBV3102LT1 general frequency controland tuning applications. It provides solid–state reliability in replacement of mechanical tuning methods. • High Q with Guaranteed Minimum Values at VHF Frequencies
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MMBV3102LT1
236AB)
MMBV3102L12
20Vdc
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MMBV3102LT1
Abstract: SMD310
Text: ON Semiconductort MMBV3102LT1 Silicon Tuning Diode ON Semiconductor Preferred Device This device is designed in the Surface Mount package for general frequency control and tuning applications. It provides solid–state reliability in replacement of mechanical tuning methods.
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MMBV3102LT1
236AB)
r14525
MMBV3102LT1/D
MMBV3102LT1
SMD310
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MMBV3102LT1G
Abstract: MMBV3102 MMBV3102LT1
Text: MMBV3102LT1G Silicon Tuning Diode This device is designed in the Surface Mount package for general frequency control and tuning applications. It provides solid−state reliability in replacement of mechanical tuning methods. Features http://onsemi.com • High Q with Guaranteed Minimum Values at VHF Frequencies
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MMBV3102LT1G
MMBV3102LT1/D
MMBV3102LT1G
MMBV3102
MMBV3102LT1
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Diode 1
Abstract: No abstract text available
Text: ON Semiconductort MMBV3102LT1 Silicon Tuning Diode ON Semiconductor Preferred Device This device is designed in the Surface Mount package for general frequency control and tuning applications. It provides solid–state reliability in replacement of mechanical tuning methods.
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MMBV3102LT1
236AB)
Diode 1
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j305 replacement
Abstract: BC237 mps2907 replacement BC109C replacement
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MMBV3102LT1 Silicon Tuning Diode Motorola Preferred Device This device is designed in the Surface Mount package for general frequency control and tuning applications. It provides solid–state reliability in replacement of mechanical
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MMBV3102LT1
236AB)
t218A
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
MV1640
j305 replacement
BC237
mps2907 replacement
BC109C replacement
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MC68B21CP
Abstract: xcm916x1cth16 transistor marking code 12W SOT-23 sg379 MC68B54P XC68HC805P18CDW mc68b50cp MC2830 NE555N CHN NE555N
Text: SG379/D REV 7 Semiconductor Products Sector NORTH AMERICA SALES AND DISTRIBUTION PRICE LIST THIS BOOK IS IN COMPUTER SORT PRODUCT CLASSIFICATION – Please see General Information Section 1.3 EFFECTIVE DATE: JANUARY 10, 1998 General Information 1 Cross References
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SG379/D
1N965BRL
ZEN15V
1N751AS
1N967BRL
ZEN18V
1N751ASRL
1N968BRL
ZEN20V
MC68B21CP
xcm916x1cth16
transistor marking code 12W SOT-23
sg379
MC68B54P
XC68HC805P18CDW
mc68b50cp
MC2830
NE555N
CHN NE555N
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transistor mosfet buv18a
Abstract: M143206EVK MMBF4856 lm358 IC 68hc05sc24 telephone line interface circuit bc517 MC68B54 XC68HC705P9 MPX100ap BUV18A
Text: Device Index and Subject Index In Brief . . . Page Device Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.1–1 General Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.2–1 Subject Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.2–9
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2N3906 Darlington transistor
Abstract: BC337 MPS5172 "cross-reference" low noise transistors bc638 transistor mpf102 LOW NOISE BC638 SOT-346 431 BC237 BC307 BC212
Text: CHAPTER 1 Selector Guide http://onsemi.com 5 Small–Signal Bipolar Transistors, JFETs, and Diodes In Brief . . . Page Bipolar Transistors General–Purpose Transistors . . . . . . . . . . . . . . . . . 8 General–Purpose Multiple Transistors . . . . . . . . 11
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M1MA151AT1
M1MA151KT1
M1MA152AT1
M1MA152KT1
M1MA151WAT1
M1MA151WKT1
M1MA152WAT1
M1MA152WKT1
BAS16WT1
M1MA141KT1
2N3906 Darlington transistor
BC337
MPS5172 "cross-reference"
low noise transistors bc638
transistor mpf102
LOW NOISE BC638
SOT-346 431
BC237
BC307
BC212
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mps2112
Abstract: UC3842 smps design with TL431 MPS2111 dc motor speed control tl494 TRANSISTOR MPS2112 ic equivalent book ncp1203 mosfet triggering circuit USING TL494 smps with uc3842 and tl431 SG3526 tip122 tip127 mosfet audio amp
Text: SG388/D Rev. 4, May-2002 Master Components Selector Guide Master Components Selector Guide ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC SCILLC . SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular
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SG388/D
May-2002
r14525
SG388
mps2112
UC3842 smps design with TL431
MPS2111
dc motor speed control tl494
TRANSISTOR MPS2112
ic equivalent book ncp1203
mosfet triggering circuit USING TL494
smps with uc3842 and tl431
SG3526
tip122 tip127 mosfet audio amp
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CS5170
Abstract: mps2112 MPS2112ZL1 100A 300V IGBT MC3346P CS4124YDW16 ON Semiconductor PRICE BOOK 12V to 220V smps inverter bd234 igbt ac motor speed control
Text: SGD501/D REV 8, January 5, 2002 NORTH AMERICA SALES AND DISTRIBUTION ON Semiconductor PRICE BOOK THIS BOOK IS IN COMPUTER SORT PRODUCT CLASSIFICATION – Please see General Information Section EFFECTIVE DATE: JANUARY 5, 2002 General Information Elimination Of Ozone Depleting Chemicals . . . .
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SGD501/D
Janua667
CS5170
mps2112
MPS2112ZL1
100A 300V IGBT
MC3346P
CS4124YDW16
ON Semiconductor PRICE BOOK
12V to 220V smps inverter
bd234
igbt ac motor speed control
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Untitled
Abstract: No abstract text available
Text: SILICON EPICAP DIODE MMBV3102LT1 . . . designed in the Surface Mount package for general frequency control and tuning applications; providing solid-state reliability in replacement of m echanical tuning methods. CASE 318-07, STY LE 8 SOT-23 TO-236AB • High Q with Guaranteed Minimum Values at VHF Frequencies
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MMBV3102LT1
OT-23
O-236AB)
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MMBV3102LT1/D SEMICONDUCTOR TECHNICAL DATA MMBV3102LT1 S ilic o n Tuning D iode Motorola Preferred Device This device is designed in the Surface Mount package for general frequency control and tuning applications. It provides solid-state reliability in replacement of mechanical
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MMBV3102LT1/D
MMBV3102LT1
OT-23
O-236AB)
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MMBV3102L
Abstract: MMBV3102LT1 sot diode marking 303
Text: SILICON EPICAP DIODE MMBV3102LT1 . . d e sign e d in the Surface M o u n t package for general freq u en cy control and tun ing applications; p ro vid in g solid-state reliability in replacem ent of m echanical tun ing m ethods. CASE 318-07, STYLE 8 SOT-23 TO-236AB
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MMBV3102LT1
OT-23
O-236AB)
MMBV3102L
MMBV3102LT1
sot diode marking 303
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SM 4c diode
Abstract: diode RA 225 R Am tuning DIODE
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MMBV3102LT1 S ilico n Tuning Diode Motorola Preferred Device This device is designed in the Surface Mount package for general frequency control and tuning applications. It provides sotid-state reliability in replacement of mechanical
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MMBV3102LT1
O-236AB)
SM 4c diode
diode RA 225 R
Am tuning DIODE
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M4C 51
Abstract: No abstract text available
Text: MOTOROLA Order this document by MMBV3102LT1/D SEMICONDUCTOR TECHNICAL DATA MMBV3102LT1 Silicon Timing Diode M otorola Preferred Device This device is designed in the Surface Mount package for general frequency control and tuning applications. It provides solid-state reliability in replacement of mechanical
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MMBV3102LT1/D
MMBV3102LT1
OT-23
O-236AB)
BV3102LT1
BV3102LT1/D
M4C 51
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Untitled
Abstract: No abstract text available
Text: SILICON EPICAP DIODE MMBV3102LT1 . . designed in the Surface M ount package fo r general frequency control and tuning applications; providing solid-state reliability in replacement of mechanical tuning methods. CA SE 318-07, STYLE 8 SOT-23 TO-236AB • High Q w ith Guaranteed M inim um Values at VHF Frequencies
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MMBV3102LT1
OT-23
O-236AB)
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Zener SOT23 C8 Marking
Abstract: DIODE M4A
Text: SOT-23 DIODES continued TVS (for ESD protection) Peak Power Dissipation - 40 Watts @ 1 ms Surge - MMBZ15VDLT1 Breakdown Voltage Min Nom Max @ IT (mA) V rwm (Volts) Irw m Ir s m V rsm Ir (iA ) (Amps) (Volts) Maximum Temperature Coefficient of V BR (mV/°C)
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OT-23
MMBZ15VDLT1
MMBV105GLT1
MMBV109LT1
MMBV409LT1
MMBV809LT1
MMBV3102LT1
MMBV609LT1
Zener SOT23 C8 Marking
DIODE M4A
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