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mPC2712 Abstract: mPC2712T PC2713T IC-2950 MPC271 mPC2713 C10535E VP15-00-3 mPC2713T C6650 Text: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT PC2713T 1.2 GHz LOW NOISE WIDE BAND AMPLIFIER SILICON BIPOLAR MONOLITHIC INTEGRATED CIRCUIT FEATURES • High power gain : 29 dB TYP. @ f = 0.5 GHz • Excellent frequency response : 1.2 GHz TYP. @ 3 dB down below the gain at 0.1 GHz	Original	PC2713T PC2713T-E3 mPC2712 mPC2712T PC2713T IC-2950 MPC271 mPC2713 C10535E VP15-00-3 mPC2713T C6650	PDF
IC-2951 Abstract: mpc2714t C10535E VP15-00-3 C6650 P1243 Text: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT µ PC2714T 1.8 GHz LOW POWER CONSUMPTION WIDE BAND AMPLIFIER SILICON BIPOLAR MONOLITHIC INTEGRATED CIRCUIT FEATURES • Low power consumption : 15 mW VCC = 3.4 V, ICC = 4.5 mA TYP. • High power gain : 11.5 dB TYP. @ f = 0.5 GHz	Original	PC2714T PC2714T-E3 IC-2951 mpc2714t C10535E VP15-00-3 C6650 P1243	PDF
mPC339c Abstract: UPC272C MPC277G UPC319G MPC393G upc272g UPC271ED 14 pin ic dip UPC311C UPC319C Text: SELECTION GUIDE Operating D EV IC E O R IG IN A L Temperature Range Î/PC271C - 2 0 ~ +70 /UPC271ED - 2 0 ~ +80 MPC271G 311 PACKAGE - 2 0 ~ +70 8 Pin Molded DIP 8 Pin Cavity DIP Single High Speed Precision 8 Pin Molded Flat 0 ~ +70 8 Pin Molded DIP MPC311G	OCR Scan	uPC271C uPC271ED uPC271G uPC311C uPC311G uPC272C uPC272D uPC272G uPC319C uPC319G mPC339c MPC277G MPC393G 14 pin ic dip	PDF
MPC271 Abstract: PC271 UPC271 IIPC271EO LM311 Vo-35 UPC311 Text: MPC271 / 311 P re c isio n V o lt a g e C o m p a r a t o r s FEATURES G E N E R A L D E S C R IP T IO N The pPC271/3t1 are voltage comparators that nav* • Operate from single 5 V supply tnpct currents more than a hundred times lower than • Maximum input current 250 nA	OCR Scan	uPC271 uPC311 pPC271/3t1 fiPC271 jiPC311 MPC271 PC271 IIPC271EO LM311 Vo-35 UPC311	PDF
uPC271 Abstract: MPC271 MPC311G PC271C Text: MPCZ71 / 311 Precision Voltage Comparators GENERAL DESCRIPTION FEATURES The /iPC 271/311 are voltage com parators th a t has • Operates fro m single 5 V supply in p u t currents more than a hundred tim es low er than • M axim um in p u t current: 250 nA	OCR Scan	MPCZ71 uPC271 uPC311 juPC271 MPCZ71/311 MPC271 MPC311G PC271C	PDF
MPC2710 Abstract: poly silicon resistor TA-295 trasistor mpc2710b trasistor power H1L-STD-883 UPC2710B uPC2710 X1011 Text: CORP. N.A . E , D.D. WED 09.21’94 11:15/ST. 1 1 : 1 2 / NO. 3301512-173 P, GET- Q ualification Test Results o n S i MMI C ( u s e N E S A T 3 P r o c e s s ) ^ ¿ 2 7 /o r Prepared on : September 8,1994 Prepared by : Taizo Kato Engineer Assistant Manager	OCR Scan	15/ST. 19/ST, 20/ST, 21/ST. MPC2710 poly silicon resistor TA-295 trasistor mpc2710b trasistor power H1L-STD-883 UPC2710B uPC2710 X1011	PDF
PC2710TB Abstract: MPC2710 C1f TRANSISTOR P12152E Text: PRELIMINARY DATA SHEET_ BIPOLAR ANALOG INTEGRATED CIRCUIT JU P C 2 7 1 0 T B 5 V, SUPER MINIMOLD SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER DESCRIPTION The //PC2710TB is a silicon monolithic integrated circuits designed as PA driver for 900 MHz band cellular	OCR Scan	uPC2710TB PC2710TB PC2710T /PC2710TB PC2710T. MPC2710 C1f TRANSISTOR P12152E	PDF
DM 0565 Abstract: sony 1S1656 MPC271 DM211 DM-211 2sa844 Text: SONY CORP/COMPONENT PRODS HTE 0302303 D 0003151 DM-211 SO N Y. Magnetoresistance Element Description 3 «S O N Y Package Outline Unit: mm The DM -211 is a highly sensitive magneto resistance element, composed of an evaporated ferromagnetic alloy on a sillicon substrate.	OCR Scan	DM-211 75mVp-p 40D31S3 MPC271 1S1656 2SA844 150J1 00031SM DM 0565 sony 1S1656 DM211 DM-211 2sa844	PDF