MRF141

Abstract: G10 zener diode 80 watt hf mosfet class AB hf bipolar 2204B AN211A J101 VK200 Nippon capacitors
Contextual Info: MOTOROLA Order this document by MRF141/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF141 N–Channel Enhancement–Mode MOSFET Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this

MRF141

Abstract: MOSFET RF POWER
Contextual Info: MRF141 RF FIELD-EFFECT POWER TRANSISTOR PACKAGE STYLE .500 4L FLG DESCRIPTION: The MRF141 is a N-Channel Enhancement-Mode MOSFET RF Power Transistor Designed for 175 MHz 150 W Transmitter and Amplifier Applications. .112x45° S FULL R D B S G MAXIMUM RATINGS

MRF141G

Abstract: MRF141G data sheet push pull power amplifier MOSFET RF POWER
Contextual Info: MRF141G RF FIELD-EFFECT POWER TRANSISTOR DESCRIPTION: The ASI MRF141G is a Dual Common Source N-Channel Enhancement-Mode MOSFET RF Power Transistor, Designed for 175 MHz, 300 W Transmitter and Amplifier Applications. PACKAGE STYLE .385X.850 4LFG MAXIMUM RATINGS

MRF255 equivalent

Abstract: motorola mrf Motorola transistors MRF mrf5015 mrf184 MRF151G F2012 DU1230P uf2810p MRF255
Contextual Info: CROSS REFERENCE Click on part No. to retrieve data sheet . 5/22/2005 Motorola POLYFET PHILIPS POLYFET MA/COM PHI POLYFET MRF134 MRF136 MRF137 MRF141 MRF141G PRF134 PRF136 PRF137 SM401 SR401 BLF145 BLF147 BLF175 BLF177 BLF242 MRF148 MRF151 MRF151G SA741 SM341

MRF141

Contextual Info: MRF141 RF Power FET 150W, to 175MHz, 28V Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this device is especially useful for FM broadcast or TV channel frequency

arco 406

Abstract: mrf141g transistor fet N-Channel RF Amplifier RF TOROIDS Design Considerations
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF141G N-Channel Enhancement-Mode MOSFET Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this

MRF140

Abstract: mrf151g 300 blf245 MRF174 "cross-reference" motorola MRF150 04 150 MRF150 MRF157 SOT123 BLF546
Contextual Info: Version 1.0 Date: 2002-08-01 PHILIPS VDMOS Cross-Reference List UHF Philips Type VDMOS BLF548 Motorola Type TMOS MRF275G MRF275L MRF177 MRF176GU MRF175LU MRF175GU BLF546 MRF166W BLF544 BLF542 MRF160 BLF404 BLF521 MRF158 BLF368 MRF141G BLF278 Motorola Philips

MRF141G

Abstract: u 172 954 zener AN211A
Contextual Info: Order this document by MRF141G/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF141G N–Channel Enhancement–Mode MOSFET Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this

MRF141

Contextual Info: MOTOROLA • I SEM ICO NDUCTOR TECHNICAL DATA The RF MOSFET Line MRF141 RF Power Field-Effect Transistor N-Channel Enhancement-Mode MOSFET 2 . . . d e s ig n e d fo r b ro ad b an d c o m m ercial and m ilita ry ap p lication s at fre q u en c ies to 175 M H z. T h e high po w er, high gain and b ro ad b an d p erfo rm an ce o f this device m akes

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor N–Channel Enhancement–Mode MOSFET MRF141 Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this

MRF141G

Abstract: 954 zener CO-AX TOROIDS Design Considerations AN211A Nippon capacitors
Contextual Info: MOTOROLA Order this document by MRF141G/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF141G N–Channel Enhancement–Mode MOSFET Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this

Contextual Info: MRF141 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)65 V(BR)GSS (V)40 I(D) Max. (A)16.0 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)300 Minimum Operating Temp (øC)

Contextual Info: MOTOROLA Order this document by MRF141/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF141 N–Channel Enhancement–Mode MOSFET Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this

MRF141

Abstract: UNELCO MICA CAPACITORS motorola MOSFET 935 2204B AN211A J101 VK200 arco capacitors 262 Nippon capacitors D11 0943 34
Contextual Info: MOTOROLA Order this document by MRF141/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF141 N–Channel Enhancement–Mode MOSFET Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this

Contextual Info: MRF141G Transistors Matched Pair of N-Channel Enhancement MOSFETs V BR DSS (V)65 V(BR)GSS (V) I(D) Max. (A)32.0 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)500 Minimum Operating Temp (øC)

MRF141G

Abstract: TOROIDS Design Considerations arco 403 arco 406 how to build vhf tv transmitter CO-AX mosfet HF amplifier motorola AN211A MRF141G data sheet AN211A
Contextual Info: MOTOROLA Order this document by MRF141G/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF141G N–Channel Enhancement–Mode MOSFET Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this

SU 179 transistor

Abstract: Motorola ic 1036 Nippon capacitors
Contextual Info: MOTOROLA O rder this docum ent by M RF141G/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field -E ffect Transistor MRF141G N-Channel Enhancement-Mode MOSFET Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this

MRF141

Abstract: Nippon capacitors
Contextual Info: MOTOROLA O rder this docum ent by M RF141/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field -E ffect Transistor MRF141 N-Channel Enhancement-Mode MOSFET Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this

RF MOSFET

Abstract: MRF141G
Contextual Info: LPioaucti, TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. The RF MOSFET Line RF Power Field-Effect Transistor MRF141G N-Channel Enhancement-Mode MOSFET Designed for broadband commercial and military applications at frequencies

MRF141G

Abstract: MRF141G data sheet
Contextual Info: MRF141G RF Power FET 300W, 175MHz, 28V M/A-COM Products Released - Rev. 3 Product Image Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this device is especially useful for FM broadcast or TV channel frequency

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Abstract: wide band choke vk200 VK200 2204B AN211A J101 MRF141 arco capacitors 262 D11 0943 34
Contextual Info: Order this document by MRF141/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF141 N–Channel Enhancement–Mode MOSFET Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this

Contextual Info: MOTOROLA m SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF141G RF Power Field-Effect Transistor N-Channel Enhancement-Mode MOSFET . •. desig n ed fo r b roa d b an d co m m ercia l and m ilita ry a pp licatio n s at frequencies to 175 MHz. The h ig h pow er, high gain and broadband p e rfo rm a n ce o f th is device m akes

arco 403

Abstract: MRF141G MRF141G data sheet AN211A Nippon capacitors
Contextual Info: MOTOROLA Order this document by MRF141G/D SEMICONDUCTOR TECHNICAL DATA RF Power Field-Effect Transistor MRF141G N–Channel Enhancement–Mode MOSFET Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor N–Channel Enhancement–Mode MOSFET MRF141G Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this