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    MRF141 Search Results

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    MRF141 Price and Stock

    MACOM MRF141G

    RF MOSFET 28V 375-04
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey MRF141G Tray 4 1
    • 1 $290.17
    • 10 $256.825
    • 100 $256.825
    • 1000 $256.825
    • 10000 $256.825
    		Buy Now
    Mouser Electronics MRF141G 36
    • 1 $286.88
    • 10 $274.75
    • 100 $267.57
    • 1000 $267.57
    • 10000 $267.57
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    Richardson RFPD MRF141G 10 1
    • 1 $284.77
    • 10 $284.77
    • 100 $284.77
    • 1000 $284.77
    • 10000 $284.77
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    Advanced Semiconductor Inc MRF141

    RF MOSFET Transistors RF Transistor
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics MRF141
    • 1 $68.12
    • 10 $57.9
    • 100 $53.82
    • 1000 $53.82
    • 10000 $53.82
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    Advanced Semiconductor Inc MRF141G

    RF MOSFET Transistors RF Transistor
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics MRF141G
    • 1 $147.95
    • 10 $136.96
    • 100 $127.97
    • 1000 $127.97
    • 10000 $127.97
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    MACOM MRF141

    Trans RF MOSFET N-CH 65V 16A 4-Pin Case 211-11
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Verical MRF141 235 2
    • 1 -
    • 10 $80
    • 100 $80
    • 1000 $80
    • 10000 $80
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    MRF141 5 2
    • 1 -
    • 10 $69.85
    • 100 $69.85
    • 1000 $69.85
    • 10000 $69.85
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    Richardson RFPD MRF141 235 1
    • 1 -
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    MACOM MRF141MP

    RF POWER TRANSISTOR
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Richardson RFPD MRF141MP 1
    • 1 -
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    MRF141 Datasheets (16)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MRF141 Advanced Semiconductor RF FIELD-EFFECT POWER TRANSISTOR Original PDF
    MRF141 M/A-COM 150 W, 28 V, 175 MHz N-CHANNEL BROADBAND RF POWER MOSFET Original PDF
    MRF141 Motorola FET Transistor, RF Power Field-Effect Transistor, N-Channel Enhancement-Mode MOSFET Original PDF
    MRF141 Motorola N-CHANNEL BROADBAND RF POWER MOSFET Original PDF
    MRF141 Motorola MRF141 RF Power Transistor Original PDF
    MRF141 NXP Semiconductors PHILIPS VDMOS RF-POWER TRANSISTORS CROSS REFERENCE LIST PHILIPS VDMOS vs MOTOROLA TMOS TRANSISTORS Original PDF
    MRF141 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    MRF141G Advanced Semiconductor RF FIELD-EFFECT POWER TRANSISTOR Original PDF
    MRF141G M/A-COM 300 W, 28 V, 175 MHz N-CHANNEL BROADBAND RF POWER MOSFET Original PDF
    MRF141G M/A-COM RF FETs, Discrete Semiconductor Products, FET RF 2N CH 28V 300W 375-04 Original PDF
    MRF141G Motorola FET Transistor, RF Power Field-Effect Transistor, N-Channel Enhancement-Mode MOSFET Original PDF
    MRF141G Motorola N-CHANNEL BROADBAND RF POWER MOSFET Original PDF
    MRF141G Motorola MRF141G RF Power Transistor Original PDF
    MRF141G NXP Semiconductors PHILIPS VDMOS RF-POWER TRANSISTORS CROSS REFERENCE LIST PHILIPS VDMOS vs MOTOROLA TMOS TRANSISTORS Original PDF
    MRF141G Motorola Over 600 obsolete distributor catalogs now available on the Datasheet Archive - Transistor, MOSFET, RF Power, VDD=28V, 300W, Class AB, Pkg Style 375/2 Scan PDF
    MRF141G Unknown FET Data Book Scan PDF

    MRF141 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MRF141

    Abstract: G10 zener diode 80 watt hf mosfet class AB hf bipolar 2204B AN211A J101 VK200 Nippon capacitors
    Text: MOTOROLA Order this document by MRF141/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF141 N–Channel Enhancement–Mode MOSFET Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this


    Original     		PDF MRF141/D MRF141 MRF141 G10 zener diode 80 watt hf mosfet class AB hf bipolar 2204B AN211A J101 VK200 Nippon capacitors

    MRF141

    Abstract: MOSFET RF POWER
    Text: MRF141 RF FIELD-EFFECT POWER TRANSISTOR PACKAGE STYLE .500 4L FLG DESCRIPTION: The MRF141 is a N-Channel Enhancement-Mode MOSFET RF Power Transistor Designed for 175 MHz 150 W Transmitter and Amplifier Applications. .112x45° S FULL R D B S G MAXIMUM RATINGS


    Original     		PDF MRF141 MRF141 112x45° MOSFET RF POWER

    MRF141G

    Abstract: MRF141G data sheet push pull power amplifier MOSFET RF POWER
    Text: MRF141G RF FIELD-EFFECT POWER TRANSISTOR DESCRIPTION: The ASI MRF141G is a Dual Common Source N-Channel Enhancement-Mode MOSFET RF Power Transistor, Designed for 175 MHz, 300 W Transmitter and Amplifier Applications. PACKAGE STYLE .385X.850 4LFG MAXIMUM RATINGS


    Original     		PDF MRF141G MRF141G MRF141G data sheet push pull power amplifier MOSFET RF POWER

    MRF255 equivalent

    Abstract: motorola mrf Motorola transistors MRF mrf5015 mrf184 MRF151G F2012 DU1230P uf2810p MRF255
    Text: CROSS REFERENCE Click on part No. to retrieve data sheet . 5/22/2005 Motorola POLYFET PHILIPS POLYFET MA/COM PHI POLYFET MRF134 MRF136 MRF137 MRF141 MRF141G PRF134 PRF136 PRF137 SM401 SR401 BLF145 BLF147 BLF175 BLF177 BLF242 MRF148 MRF151 MRF151G SA741 SM341


    Original     		PDF MRF134 MRF136 MRF137 MRF141 MRF141G PRF134 PRF136 PRF137 SM401 SR401 MRF255 equivalent motorola mrf Motorola transistors MRF mrf5015 mrf184 MRF151G F2012 DU1230P uf2810p MRF255

    MRF141

    Abstract: No abstract text available
    Text: MRF141 RF Power FET 150W, to 175MHz, 28V Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this device is especially useful for FM broadcast or TV channel frequency


    Original     		PDF MRF141 175MHz, MRF141

    MRF140

    Abstract: mrf151g 300 blf245 MRF174 "cross-reference" motorola MRF150 04 150 MRF150 MRF157 SOT123 BLF546
    Text: Version 1.0 Date: 2002-08-01 PHILIPS VDMOS Cross-Reference List UHF Philips Type VDMOS BLF548 Motorola Type TMOS MRF275G MRF275L MRF177 MRF176GU MRF175LU MRF175GU BLF546 MRF166W BLF544 BLF542 MRF160 BLF404 BLF521 MRF158 BLF368 MRF141G BLF278 Motorola Philips


    Original     		PDF BLF548 MRF275G MRF275L MRF177 MRF176GU MRF175LU MRF175GU BLF546 MRF166W BLF544 MRF140 mrf151g 300 blf245 MRF174 "cross-reference" motorola MRF150 04 150 MRF150 MRF157 SOT123 BLF546

    MRF141G

    Abstract: u 172 954 zener AN211A
    Text: Order this document by MRF141G/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF141G N–Channel Enhancement–Mode MOSFET Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this


    Original     		PDF MRF141G/D MRF141G MRF141G u 172 954 zener AN211A

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor N–Channel Enhancement–Mode MOSFET MRF141 Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this


    Original     		PDF MRF141

    MRF141G

    Abstract: 954 zener CO-AX TOROIDS Design Considerations AN211A Nippon capacitors
    Text: MOTOROLA Order this document by MRF141G/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF141G N–Channel Enhancement–Mode MOSFET Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this


    Original     		PDF MRF141G/D MRF141G MRF141G 954 zener CO-AX TOROIDS Design Considerations AN211A Nippon capacitors

    Untitled

    Abstract: No abstract text available
    Text: MRF141 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)65 V(BR)GSS (V)40 I(D) Max. (A)16.0 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)300 Minimum Operating Temp (øC)


    Original     		PDF MRF141

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF141/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF141 N–Channel Enhancement–Mode MOSFET Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this


    Original     		PDF MRF141/D MRF141 MRF141/D*

    MRF141

    Abstract: UNELCO MICA CAPACITORS motorola MOSFET 935 2204B AN211A J101 VK200 arco capacitors 262 Nippon capacitors D11 0943 34
    Text: MOTOROLA Order this document by MRF141/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF141 N–Channel Enhancement–Mode MOSFET Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this


    Original     		PDF MRF141/D MRF141 MRF141 UNELCO MICA CAPACITORS motorola MOSFET 935 2204B AN211A J101 VK200 arco capacitors 262 Nippon capacitors D11 0943 34

    MRF141

    Abstract: motorola MOSFET 935 2204B AN211A J101 VK200 S2230 Nippon capacitors
    Text: MOTOROLA Order this document by MRF141/D SEMICONDUCTOR TECHNICAL DATA RF Power Field-Effect Transistor MRF141 N–Channel Enhancement–Mode MOSFET Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this


    Original     		PDF MRF141/D MRF141 MRF141 motorola MOSFET 935 2204B AN211A J101 VK200 S2230 Nippon capacitors

    Untitled

    Abstract: No abstract text available
    Text: MRF141G Transistors Matched Pair of N-Channel Enhancement MOSFETs V BR DSS (V)65 V(BR)GSS (V) I(D) Max. (A)32.0 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)500 Minimum Operating Temp (øC)


    Original     		PDF MRF141G

    RF MOSFET

    Abstract: MRF141G
    Text: LPioaucti, TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. The RF MOSFET Line RF Power Field-Effect Transistor MRF141G N-Channel Enhancement-Mode MOSFET Designed for broadband commercial and military applications at frequencies


    Original     		PDF MRF141G 14dBTyp) 100mA) 175MHz) RF MOSFET MRF141G

    MRF141G

    Abstract: MRF141G data sheet
    Text: MRF141G RF Power FET 300W, 175MHz, 28V M/A-COM Products Released - Rev. 3 Product Image Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this device is especially useful for FM broadcast or TV channel frequency


    Original     		PDF MRF141G 175MHz, MRF141G MRF141G data sheet

    transistor zo 109

    Abstract: wide band choke vk200 VK200 2204B AN211A J101 MRF141 arco capacitors 262 D11 0943 34
    Text: Order this document by MRF141/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF141 N–Channel Enhancement–Mode MOSFET Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this


    Original     		PDF MRF141/D MRF141 transistor zo 109 wide band choke vk200 VK200 2204B AN211A J101 MRF141 arco capacitors 262 D11 0943 34

    arco 403

    Abstract: MRF141G MRF141G data sheet AN211A Nippon capacitors
    Text: MOTOROLA Order this document by MRF141G/D SEMICONDUCTOR TECHNICAL DATA RF Power Field-Effect Transistor MRF141G N–Channel Enhancement–Mode MOSFET Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this


    Original     		PDF MRF141G/D MRF141G arco 403 MRF141G MRF141G data sheet AN211A Nippon capacitors

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor N–Channel Enhancement–Mode MOSFET MRF141G Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this


    Original     		PDF MRF141G floatMRF141G

    arco 406

    Abstract: mrf141g transistor fet N-Channel RF Amplifier RF TOROIDS Design Considerations
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF141G N-Channel Enhancement-Mode MOSFET Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this


    OCR Scan     		PDF MRF141G MRF141G arco 406 transistor fet N-Channel RF Amplifier RF TOROIDS Design Considerations

    MRF141

    Abstract: No abstract text available
    Text: MOTOROLA • I SEM ICO NDUCTOR TECHNICAL DATA The RF MOSFET Line MRF141 RF Power Field-Effect Transistor N-Channel Enhancement-Mode MOSFET 2 . . . d e s ig n e d fo r b ro ad b an d c o m m ercial and m ilita ry ap p lication s at fre q u en c ies to 175 M H z. T h e high po w er, high gain and b ro ad b an d p erfo rm an ce o f this device m akes


    OCR Scan     		PDF MRF141 RF141 MRF141

    SU 179 transistor

    Abstract: Motorola ic 1036 Nippon capacitors
    Text: MOTOROLA O rder this docum ent by M RF141G/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field -E ffect Transistor MRF141G N-Channel Enhancement-Mode MOSFET Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this


    OCR Scan     		PDF RF141G/D SU 179 transistor Motorola ic 1036 Nippon capacitors

    MRF141

    Abstract: Nippon capacitors
    Text: MOTOROLA O rder this docum ent by M RF141/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field -E ffect Transistor MRF141 N-Channel Enhancement-Mode MOSFET Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this


    OCR Scan     		PDF RF141/D MRF141 Nippon capacitors

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA m SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF141G RF Power Field-Effect Transistor N-Channel Enhancement-Mode MOSFET . •. desig n ed fo r b roa d b an d co m m ercia l and m ilita ry a pp licatio n s at frequencies to 175 MHz. The h ig h pow er, high gain and broadband p e rfo rm a n ce o f th is device m akes


    OCR Scan     		PDF MRF141G MRF141G F141G