MRF18085ALR3 Search Results

MRF18085ALR3 Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
MRF18085ALR3		Freescale Semiconductor	RF Power Field Effect Transistors		Original	PDF

MRF18085ALR3 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
MRF18085A Abstract: F 5M 365 R AN1955 GSM1800 MRF18085ALR3 MRF18085ALSR3 Text: Freescale Semiconductor Technical Data Document Number: MRF18085A Rev. 6, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF18085ALR3 MRF18085ALSR3 Designed for GSM and GSM EDGE base station applications with frequencies from 1800 to 2000 MHz. Suitable for TDMA, CDMA and	Original	PDF	MRF18085A MRF18085ALR3 MRF18085ALSR3 MRF18085ALR3 MRF18085A F 5M 365 R AN1955 GSM1800 MRF18085ALSR3
MRF18085A Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRF18085A Rev. 5, 3/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF18085ALR3 MRF18085ALSR3 Designed for GSM and GSM EDGE base station applications with frequencies from 1800 to 2000 MHz. Suitable for TDMA, CDMA and	Original	PDF	MRF18085A MRF18085ALR3 MRF18085ALSR3 MRF18085A
MRF18085A Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRF18085A-1 Rev. 7, 10/2008 RF Power Field Effect Transistor MRF18085ALR3 Designed for GSM and GSM EDGE base station applications with frequencies from 1800 to 2000 MHz. Suitable for TDMA, CDMA and multicarrier	Original	PDF	MRF18085A--1 MRF18085ALR3 MRF18085A--1 MRF18085A
MRF18085A Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRF18085A Rev. 6, 5/2006 RF Power Field Effect Transistors MRF18085ALR3 MRF18085ALSR3 Designed for GSM and GSM EDGE base station applications with frequencies from 1800 to 2000 MHz. Suitable for TDMA, CDMA and multicarrier	Original	PDF	MRF18085A MRF18085ALR3 MRF18085ALSR3
j497 Abstract: MRF18085A Text: Freescale Semiconductor Technical Data Document Number: MRF18085A Rev. 7, 10/2008 RF Power Field Effect Transistor MRF18085ALR3 Designed for GSM and GSM EDGE base station applications with frequencies from 1800 to 2000 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN - PCS/	Original	PDF	MRF18085A MRF18085ALR3 MRF18085A j497
power transistors table Abstract: MW6S010NR1 mrfe6s9060n MHW6342TN Motorola Microwave power Transistor "RF high power Amplifier" MRF6V2300N MRFG35010R1 MRF6P23190HR6 MRF373 PUSH PULL Text: RF Products Freescale Semiconductor Selector Guide SG46 Rev. 34 6/2008 RF Product Selector Guide Offering a broad portfolio of RF products, Freescale Semiconductor primarily serves the wireless infrastructure, wireless subscriber, general purpose amplifier, broadcast and industrial markets. Freescale pioneered RF technology and continues to be the leader in the field by providing the quality,	Original	PDF
MRF18085A Abstract: No abstract text available Text: Document Number: MRF18085A-2 Rev. 8, 10/2008 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET MRF18085ALSR3 LIFETIME BUY Designed for GSM and GSM EDGE base station applications with frequencies from 1800 to 2000 MHz. Suitable for TDMA, CDMA and multicarrier	Original	PDF	MRF18085A--2 MRF18085ALSR3 MRF18085A--2 MRF18085A