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    MRF5P21180 Search Results

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    MRF5P21180 Price and Stock

    NXP Semiconductors MRF5P21180HR5

    RF MOSFET LDMOS 28V NI1230
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    DigiKey MRF5P21180HR5 Reel 50
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    Rochester Electronics LLC MRF5P21180HR5

    RF MOSFET LDMOS 28V NI1230
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey MRF5P21180HR5 Bulk 3
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    NXP Semiconductors MRF5P21180HR6

    RF MOSFET LDMOS 28V NI1230
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    DigiKey MRF5P21180HR6 Reel
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    Freescale Semiconductor MRF5P21180HR5

    FET RF 65V 2.16GHZ NI-1230
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    Rochester Electronics MRF5P21180HR5 30 1
    • 1 $132.86
    • 10 $132.86
    • 100 $124.89
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    MRF5P21180 Datasheets (10)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MRF5P21180 Freescale Semiconductor MRF5P21180R6 2170 MHz, 38 W Avg., 2 x W-CDMA, 28 V Lateral N-Channel RF Power MOSFET Original PDF
    MRF5P21180 Motorola RF Power Field Effect Transistor Original PDF
    MRF5P21180 Motorola 2170 MHz, 180 W AVG., 2 x W-CDMA, 28 V Lateral N-Channel RF Power MOSFET Original PDF
    MRF5P21180 Motorola RF Power Field Effect Transistor Original PDF
    MRF5P21180HR5 Freescale Semiconductor RF FETs, Discrete Semiconductor Products, MOSFET RF N-CHAN 28V 38W NI-1230 Original PDF
    MRF5P21180HR6 Freescale Semiconductor MRF5P21180HR6 2170 MHz, 38 W Avg., 28 V, 2 x W-CDMA Lateral N-Channel RF Power MOSFET Original PDF
    MRF5P21180HR6 Freescale Semiconductor RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Original PDF
    MRF5P21180HR6 Freescale Semiconductor HV5 38W WCDMA NI1230H Original PDF
    MRF5P21180R6 Freescale Semiconductor 2170 MHz, 38 W AVG., 2 x W-CDMA, 28 V Lateral N-Channel RF Power MOSFET Original PDF
    MRF5P21180R6 Motorola RF Power Field Effect Transistor Original PDF

    MRF5P21180 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    MRF5P21180HR6

    Abstract: MRF5P21180 J1105
    Text: Freescale Semiconductor Technical Data Rev. 1, 12/2004 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF5P21180HR6 Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications.


    Original     		MRF5P21180HR6 MRF5P21180 J1105 PDF

    MRF5P21180HR6

    Abstract: MRF5P21180 AN1955 CDR33BX104AKYS
    Text: Freescale Semiconductor Technical Data Document Number: MRF5P21180HR6 Rev. 3, 10/2008 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET MRF5P21180HR6 Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications.


    Original     		MRF5P21180HR6 MRF5P21180HR6 MRF5P21180 AN1955 CDR33BX104AKYS PDF

    MRF5P21180

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistor MRF5P21180 N–Channel Enhancement–Mode Lateral MOSFET Designed for W–CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications.


    Original     		MRF5P21180 PDF

    MRF5P21180HR6

    Abstract: No abstract text available
    Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF5P21180/D SEMICONDUCTOR TECHNICAL DATA Replaced by MRF5P21180HR6. “H” suffix indicates lower thermal resistance package. The RF MOSFET Line MRF5P21180R6 RF Power Field Effect Transistor 2170 MHz, 38 W AVG.,


    Original     		MRF5P21180/D MRF5P21180HR6. MRF5P21180R6 MRF5P21180HR6 PDF

    MRF5P21180

    Abstract: CDR33BX104AKWS 539 MOTOROLA transistor
    Text: MOTOROLA Order this document by MRF5P21180/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistor MRF5P21180 N–Channel Enhancement–Mode Lateral MOSFET Designed for W–CDMA base station applications with frequencies from 2110


    Original     		MRF5P21180/D MRF5P21180 MRF5P21180 CDR33BX104AKWS 539 MOTOROLA transistor PDF

    MRF5P21180

    Abstract: J-1389 MRF5P21180HR6
    Text: MOTOROLA Order this document by MRF5P21180HR6/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor MRF5P21180HR6 N - Channel Enhancement - Mode Lateral MOSFET Designed for W- CDMA base station applications with frequencies from 2110


    Original     		MRF5P21180HR6/D MRF5P21180HR6 MRF5P21180 J-1389 PDF

    MRF5P21180

    Abstract: MRF5P21180HR6
    Text: MRF5P21180HR6 Rev. 1, 12/2004 Freescale Semiconductor Technical Data RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF5P21180HR6 Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications.


    Original     		MRF5P21180HR6 MRF5P21180HR6 MRF5P21180 PDF

    MRF5P21180HR6

    Abstract: MRF5P21180 AN1955 CDR33BX104AKWS rf push pull mosfet power amplifier
    Text: Freescale Semiconductor Technical Data Document Number: MRF5P21180HR6 Rev. 2, 5/2006 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF5P21180HR6 Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications.


    Original     		MRF5P21180HR6 MRF5P21180HR6 MRF5P21180 AN1955 CDR33BX104AKWS rf push pull mosfet power amplifier PDF

    MRF5P21180HR6

    Abstract: MRF5P21180 transistor motorola 236 CDR33BX104AKWS MRF5P21180R6
    Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF5P21180/D SEMICONDUCTOR TECHNICAL DATA Replaced by MRF5P21180HR6. “H” suffix indicates lower thermal resistance package. The RF MOSFET Line MRF5P21180R6 RF Power Field Effect Transistor 2170 MHz, 38 W AVG.,


    Original     		MRF5P21180/D MRF5P21180HR6. MRF5P21180R6 MRF5P21180HR6 MRF5P21180 transistor motorola 236 CDR33BX104AKWS MRF5P21180R6 PDF

    MRF5P21180

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF5P21180/D SEMICONDUCTOR TECHNICAL DATA The RF Sub - Micron MOSFET Line RF Power Field Effect Transistor MRF5P21180R6 N - Channel Enhancement - Mode Lateral MOSFET Designed for W- CDMA base station applications with frequencies from 2110


    Original     		MRF5P21180/D MRF5P21180R6 MRF5P21180 PDF

    MRF5P21180

    Abstract: MRF5P21180HR6
    Text: MRF5P21180HR6 Rev. 1, 12/2004 Freescale Semiconductor Technical Data RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF5P21180HR6 Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications.


    Original     		MRF5P21180HR6 MRF5P21180HR6 MRF5P21180 PDF

    539 MOTOROLA transistor

    Abstract: mosfet MTBF MRF5P21180 100-B300 transistor motorola 236 CDR33BX104AKWS
    Text: MOTOROLA Order this document by MRF5P21180/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistor MRF5P21180 N–Channel Enhancement–Mode Lateral MOSFET Designed for W–CDMA base station applications with frequencies from 2110


    Original     		MRF5P21180/D MRF5P21180 539 MOTOROLA transistor mosfet MTBF MRF5P21180 100-B300 transistor motorola 236 CDR33BX104AKWS PDF

    MRF5P21180

    Abstract: 539 MOTOROLA transistor CDR33BX104AKWS
    Text: MOTOROLA Order this document by MRF5P21180/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistor MRF5P21180 N–Channel Enhancement–Mode Lateral MOSFET Designed for W–CDMA base station applications with frequencies from 2110


    Original     		MRF5P21180/D MRF5P21180 MRF5P21180 539 MOTOROLA transistor CDR33BX104AKWS PDF

    MRF5P21180

    Abstract: CDR33BX104AKWS MRF5P21180R6
    Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF5P21180/D SEMICONDUCTOR TECHNICAL DATA The RF Sub - Micron MOSFET Line RF Power Field Effect Transistor MRF5P21180R6 Freescale Semiconductor, Inc. N - Channel Enhancement - Mode Lateral MOSFET


    Original     		MRF5P21180/D MRF5P21180R6 MRF5P21180 CDR33BX104AKWS MRF5P21180R6 PDF

    MRF5P21180

    Abstract: 539 MOTOROLA transistor
    Text: MOTOROLA Order this document by MRF5P21180/D SEMICONDUCTOR TECHNICAL DATA The RF Sub - Micron MOSFET Line RF Power Field Effect Transistor MRF5P21180R6 N - Channel Enhancement - Mode Lateral MOSFET Designed for W- CDMA base station applications with frequencies from 2110


    Original     		MRF5P21180/D MRF5P21180R6 MRF5P21180 539 MOTOROLA transistor PDF

    BFG591 amplifier

    Abstract: 5.8GHz Analog RF mmic MRF6Vp3450 nxp Standard Marking BLF6G21-10G FET 2N5459 RF LNB C band chipset radar 77 ghz sige 82 sot363-6 Dect antenna smd code marking ft sot23
    Text: RF手册 第12版 RF产品的应用和设计手册 2009年6月 Experience high-performance analog 体验高性能模拟产品 恩智浦RF手册令设计更简易 恩智浦 RF手册是当今RF设计市场上最重要的参考工具之一，展示了我们恩智浦半导体 (NXP


    Original     		TFF1007HN TFF11070HN TFF11073HN TFF11077HN TFF11080HN TFF11084HN TFF11088HN TFF11092HN TFF11096HN TFF11101HN BFG591 amplifier 5.8GHz Analog RF mmic MRF6Vp3450 nxp Standard Marking BLF6G21-10G FET 2N5459 RF LNB C band chipset radar 77 ghz sige 82 sot363-6 Dect antenna smd code marking ft sot23 PDF

    MPC5634M

    Abstract: MRF6VP11KH mw4ic2020nb S12XEQ512 MPC5516E MXC300-30 MPC5602P MSC7120 mpx6115 S08DZ128
    Text: Because of an order from the United States International Trade Commission, BGA-packaged product lines and part numbers indicated here currently are not available from Freescale for import or sale in the United States prior to September 2010: ,


    Original     		DSP56311EVM DSP56311VF150 DSP56311VL150 DSP56321VF200 DSP56321VF220 DSP56321VF240 DSP56321VF275 DSP56321VL200 DSP56321VL220 DSP56321VL240 MPC5634M MRF6VP11KH mw4ic2020nb S12XEQ512 MPC5516E MXC300-30 MPC5602P MSC7120 mpx6115 S08DZ128 PDF

    stripline directional couplers

    Abstract: MRFP36030 MRF5S9080NB NONLINEAR MODEL LDMOS MRF377HR5 Product Selector Guide MRF1511NT1 ESD MC13820 MRF377HR3 MRF6S9045NBR1
    Text: RF and IF Quarter 3, 2005 SG1009Q32005 Rev 0 What’s New! Market Product GSM/GPRS Cellular MMM6025 Cellular, GPS, ISM MC13820 TV Broadcast MRF377HR3, MRF377HR5 900 MHz Cellular Base Station MRF6S9045NR1, MRF6S9045NBR1, MRF6S9060NR1, MRF6S9060NBR1, MRF6S9125NR1, MRF6S9125NBR1, MRF6S9130HR3, MRF6S9130HSR3,


    Original     		SG1009Q32005 MMM6025 MC13820 MRF377HR3, MRF377HR5 MRF6S9045NR1, MRF6S9045NBR1, MRF6S9060NR1, MRF6S9060NBR1, MRF6S9125NR1, stripline directional couplers MRFP36030 MRF5S9080NB NONLINEAR MODEL LDMOS MRF377HR5 Product Selector Guide MRF1511NT1 ESD MC13820 MRF377HR3 MRF6S9045NBR1 PDF

    MC908GP32

    Abstract: 9S12XHZ256 DSP56309VF100A 9S08DZ32 mpx6115 MXC300-30 xc912bc32 DSP56309AG100A MRF6VP2600H 9S08SG16
    Text: Freescale Semiconductor Product Selector Guide Cross Reference Quarter 4, 2007 SG1000CRQ42007 Rev 0 Introduction The Freescale Semiconductor Product Selector Guide Cross-Reference provides a listing of all products documented in the eight Freescale Semiconductor Product Selector Guides. The Product Cross-Reference group lists new and existing


    Original     		SG1000CRQ42007 SG187, SG1002Q42007, SG1004Q42007, MC908GP32 9S12XHZ256 DSP56309VF100A 9S08DZ32 mpx6115 MXC300-30 xc912bc32 DSP56309AG100A MRF6VP2600H 9S08SG16 PDF

    TRANSISTOR REPLACEMENT GUIDE

    Abstract: FS Oncore hf modem ofdm bts 2140 1b data sheet ISO 1302 uhf linear amplifier module linear amplifier 470-860 amplifier mrf247 class AB hf bipolar FM LDMOS freescale transistor
    Text: Quarter 4, 2004 SG1009Q42004 Rev 0 What’s New! Market Product 900 MHz Cellular Base Station MRF5S9070NR1, MRF5S9100MR1, MRF5S9100MBR1, MRF5S9100NR1, MRF5S9100NBR1, MRF5S9101MR1, MRF5S9101MBR1, MRF5S9101NR1, MRF5S9101NBR1, MRF9200LR3, MRF9200LSR3 CDMA 1.9 GHz Cellular Base Station


    Original     		SG1009Q42004 MRF5S9070NR1, MRF5S9100MR1, MRF5S9100MBR1, MRF5S9100NR1, MRF5S9100NBR1, MRF5S9101MR1, MRF5S9101MBR1, MRF5S9101NR1, MRF5S9101NBR1, TRANSISTOR REPLACEMENT GUIDE FS Oncore hf modem ofdm bts 2140 1b data sheet ISO 1302 uhf linear amplifier module linear amplifier 470-860 amplifier mrf247 class AB hf bipolar FM LDMOS freescale transistor PDF

    2a258 transistor

    Abstract: Fuji Electric tv schematic diagram smd transistor WB3 VHF FM PLL schematic mc145152 Motorola transistor smd marking codes MARK 176 SOT363 RF Note AR164, Motorola RF Device Data, Volume II, D tip off 0401 mosfet transistor cordless phone Transceiver IC semiconductors cross index
    Text: Device Data Book WIRELESS RF PRODUCT DEVICE DATA ireless DL110/D Rev. 13 3/2002 2.5G 3G Contents at a Glance Wireless RF Product Device Data Data Sheet Device Index Alphanumeric . . . . . . . . . . . . . . . . . . . . . . . . ix End of Life Product Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . xii


    Original     		DL110/D 2a258 transistor Fuji Electric tv schematic diagram smd transistor WB3 VHF FM PLL schematic mc145152 Motorola transistor smd marking codes MARK 176 SOT363 RF Note AR164, Motorola RF Device Data, Volume II, D tip off 0401 mosfet transistor cordless phone Transceiver IC semiconductors cross index PDF

    very simple walkie talkie circuit diagram

    Abstract: blf278 models walkie talkie circuit diagram simple walkie talkie circuit diagram SiGe HBT GAIN BLOCK MMIC AMPLIFIER N6 BF245c spice model smd TRANSISTOR code marking 8K MOBILE jammer GSM 1800 MHZ BSS83 spice model smd TRANSISTOR code marking 7k sot23
    Text: Experience high-performance analog NXP’s RF Manual makes design work much easier NXP’s RF Manual – one of the most important reference tools on the market for today’s RF designers – features our complete range of RF products, from low to high power.


    Original     		TFF1007HN TFF11070HN TFF11073HN TFF11077HN TFF11080HN TFF11084HN TFF11088HN TFF11092HN TFF11096HN TFF11101HN very simple walkie talkie circuit diagram blf278 models walkie talkie circuit diagram simple walkie talkie circuit diagram SiGe HBT GAIN BLOCK MMIC AMPLIFIER N6 BF245c spice model smd TRANSISTOR code marking 8K MOBILE jammer GSM 1800 MHZ BSS83 spice model smd TRANSISTOR code marking 7k sot23 PDF

    filter for GPS spice

    Abstract: BLF578 diode smd marking BUF GP 750 BLF7G10-300p AX 2008 lqfp48 GP 809 DIODE BF1118 MPAL2731M15 bgu7051 BB 505 Varicap Diode
    Text: RF手册第14版 用于高性能RF产品的应用和设计手册2010年5月 恩智浦半导体RF手册第14版 3 高性能RF适用于最高要求的应用 恩智浦RF手册令设计更简易 恩智浦RF手册–当今RF设计市场上最重要的参考工具之一–展示了我们从小信号到大功率


    Original     		RF20105 67SiGe JESD204A-DACADC JESD204A- AEC100 BFR90 BFQ33 TFF1004HN JESD204A BLF578) filter for GPS spice BLF578 diode smd marking BUF GP 750 BLF7G10-300p AX 2008 lqfp48 GP 809 DIODE BF1118 MPAL2731M15 bgu7051 BB 505 Varicap Diode PDF

    MPF102 spice model

    Abstract: BLF278 mosfet HF amplifier BLF4G08LS-160A x-band mmic core chip BLF4G08LS-160 BIT 3713 IB3135 toshiba smd marking code transistor bgu7041 TEA6848H
    Text: RF Manual 15th edition Application and design manual for High Performance RF products May 2011 High Performance RF for the most demanding applications NXP’s RF Manual makes design work much easier NXP's RF Manual is one of the most important reference tools on the market for


    Original     		te121 MPF102 spice model BLF278 mosfet HF amplifier BLF4G08LS-160A x-band mmic core chip BLF4G08LS-160 BIT 3713 IB3135 toshiba smd marking code transistor bgu7041 TEA6848H PDF