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    MRF904 Search Results

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    MRF904 Price and Stock

    Microchip Technology Inc MRF904

    RF TRANS NPN 15V 4GHZ TO72
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    NXP Semiconductors MRF9045NR1

    RF MOSFET LDMOS 28V TO270-2
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    NXP Semiconductors MRF9045LR1

    RF MOSFET LDMOS 28V NI360
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    DigiKey MRF9045LR1 Reel 500
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    NXP Semiconductors MRF9045LR5

    RF MOSFET LDMOS 28V NI360
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    DigiKey MRF9045LR5 Reel 50
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    Rochester Electronics LLC MRF9045GMR1

    RF POWER LDMOS T0270
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    MRF904 Datasheets (34)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MRF904 Advanced Power Technology RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Original PDF
    MRF904 Advanced Semiconductor Transistor Original PDF
    MRF904 Microsemi RF & MICROWAVE DISCRETE LOW POWER TRANSISTOR Original PDF
    MRF904 Various Russian Datasheets Transistor Original PDF
    MRF904 Motorola The European Selection Data Book 1976 Scan PDF
    MRF904 Motorola European Master Selection Guide 1986 Scan PDF
    MRF904 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    MRF904 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    MRF904 Unknown Transistor Replacements Scan PDF
    MRF904 Unknown Transistor Replacements Scan PDF
    MRF904 Unknown Transistor Replacements Scan PDF
    MRF9045 Freescale Semiconductor MRF9045LR1, MRF9045LSR1 945 MHz, 45 W, 28 V Lateral N-Channel Broadband RF Power MOSFETs Original PDF
    MRF9045 Motorola MRF9045 RF Power Transistors Original PDF
    MRF9045GNR1 Freescale Semiconductor 45W 945MHZ LDMOS TO270N Original PDF
    MRF9045LR1 Freescale Semiconductor RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Original PDF
    MRF9045LR1 Freescale Semiconductor RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Original PDF
    MRF9045LR1 Freescale Semiconductor 945 MHz, 45 W, 28 V Lateral N-Channel Broadband RF Power MOSFET Original PDF
    MRF9045LR5 Freescale Semiconductor RF FETs, Discrete Semiconductor Products, IC MOSFET RF N-CHAN NI-360 Original PDF
    MRF9045LSR1 Freescale Semiconductor RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Original PDF
    MRF9045LSR1 Freescale Semiconductor 945 MHz, 45 W, 28 V Lateral N-Channel Broadband RF Power MOSFET Original PDF

    MRF904 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MRF9045

    Abstract: MRF9045S MRF9045SR1
    Text: MOTOROLA Order this document by MRF9045/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices


    Original     		PDF MRF9045/D MRF9045 MRF9045S MRF9045SR1 MRF9045 MRF9045S MRF9045SR1

    MRF9045MBR1

    Abstract: MRF9045MR1 6020G
    Text: MOTOROLA Order this document by MRF9045MR1/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices


    Original     		PDF MRF9045MR1/D MRF9045MR1 MRF9045MBR1 MRF9045MBR1 6020G

    motorola MOSFET 935

    Abstract: MRF9045 MRF9045LR1 MRF9045LSR1
    Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF9045/D SEMICONDUCTOR TECHNICAL DATA The RF Sub - Micron MOSFET Line RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices


    Original     		PDF MRF9045/D MRF9045LR1 MRF9045LSR1 MRF9045LR1 motorola MOSFET 935 MRF9045 MRF9045LSR1

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data MRF9045MR1 Rev. 8, 3/2005 RF Power Field Effect Transistors MRF9045NR1 MRF9045NBR1 MRF9045MR1 MRF9045MBR1 N−Channel Enhancement−Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these


    Original     		PDF MRF9045MR1 MRF9045NR1 MRF9045NBR1 MRF9045MBR1

    RF3-50

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF9045MR1/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices


    Original     		PDF MRF9045MR1/D MRF9045MR1 MRF9045MBR1 MRF9045MR1/D RF3-50

    MRF9045

    Abstract: MRF9045LR1 MRF9045LSR1
    Text: Freescale Semiconductor Technical Data Document Number: MRF9045 Rev. 10, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF9045LR1 MRF9045LSR1 Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these


    Original     		PDF MRF9045 MRF9045LR1 MRF9045LSR1 MRF9045LR1 MRF9045 MRF9045LSR1

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Rev. 7, 1/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF9045MR1 MRF9045MBR1 Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these


    Original     		PDF MRF9045MR1) MRF9045MR1 MRF9045MBR1 MRF9045MBR1)

    MRF9045R1

    Abstract: MRF9045 MRF9045S MRF9045SR1 300 Volt mosfet schematic circuit
    Text: MOTOROLA Order this document by MRF9045/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices


    Original     		PDF MRF9045/D MRF9045R1 MRF9045SR1 MRF9045R1 MRF9045 MRF9045S MRF9045SR1 300 Volt mosfet schematic circuit

    MRF9045LSR1

    Abstract: MRF9045LR1 EB212 MRF9045 MRF9045LS REV01
    Text: Freescale Semiconductor Technical Data Document Number: MRF9045 Rev. 11, 9/2008 NOT RECOMMENDED FOR NEW DESIGN N - Channel Enhancement - Mode Lateral MOSFETs MRF9045LR1 MRF9045LSR1 Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these


    Original     		PDF MRF9045 MRF9045LR1 MRF9045LSR1 MRF9045LR1 MRF9045LSR1 EB212 MRF9045 MRF9045LS REV01

    Untitled

    Abstract: No abstract text available
    Text: MRF904 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)15 V(BR)CBO (V)25 I(C) Max. (A)30m Absolute Max. Power Diss. (W)200m Minimum Operating Temp (øC)-65 Maximum Operating Temp (øC)200þ I(CBO) Max. (A)50n @V(CBO) (V) (Test Condition)15


    Original     		PDF MRF904

    c 945 TRANSISTOR equivalent

    Abstract: 9601 mosfet 9450 transistor
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistor MRF9045MR1 N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications at frequencies up to 1.0 GHz. The high gain and broadband performance of this device


    Original     		PDF MRF9045MR1 c 945 TRANSISTOR equivalent 9601 mosfet 9450 transistor

    MRF904

    Abstract: No abstract text available
    Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MRF904 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • • • Silicon NPN, high Frequency, To-72 packaged, Transistor High Power Gain - GU(max): 11 dB (typ) @ f = 450 MHz


    Original     		PDF MRF904 To-72 MRF904

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF9045M/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistor MRF9045M MRF9045MR1 N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications at frequencies up to 1.0 GHz. The high gain and broadband performance of this device


    Original     		PDF MRF9045M/D MRF9045M MRF9045MR1

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data MRF9045 Rev. 9, 12/2004 RF Power Field Effect Transistors N−Channel Enhancement−Mode Lateral MOSFETs MRF9045LR1 MRF9045LSR1 Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these


    Original     		PDF MRF9045

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF9045MR1/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistor MRF9045MR1 N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications at frequencies up to 1.0 GHz. The high gain and broadband performance of this device


    Original     		PDF MRF9045MR1/D MRF9045MR1

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF9045MR1/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors MRF9045MR1 MRF9045MBR1 N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices


    Original     		PDF MRF9045MR1/D MRF9045MR1 MRF9045MBR1

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF9045/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications at frequencies up to 1.0 GHz. The high gain and broadband performance of these devices


    Original     		PDF MRF9045/D MRF9045 MRF9045S MRF9045SR1

    MRF9045N

    Abstract: 945 TRANSISTOR AN1955 EB212 MRF9045MR1 MRF9045NR1 A113 6020G marking wb2 MRF9045
    Text: Freescale Semiconductor Technical Data Document Number: MRF9045N Rev. 12, 9/2008 RF Power Field Effect Transistor MRF9045NR1 Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of this device


    Original     		PDF MRF9045N MRF9045NR1 MRF9045N 945 TRANSISTOR AN1955 EB212 MRF9045MR1 MRF9045NR1 A113 6020G marking wb2 MRF9045

    MRF9045N

    Abstract: A113 MRF9045MR1 MRF9045NBR1 MRF9045NR1 MARKING WB1 6020G
    Text: Freescale Semiconductor Technical Data Document Number: MRF9045N Rev. 10, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF9045NR1 MRF9045NBR1 Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these


    Original     		PDF MRF9045N MRF9045NR1 MRF9045NBR1 MRF9045NR1 MRF9045N A113 MRF9045MR1 MRF9045NBR1 MARKING WB1 6020G

    MRF904

    Abstract: No abstract text available
    Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MRF904 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • • • Silicon NPN, high Frequency, To-72 packaged, Transistor High Power Gain - GU(max)=11 dB (typ) @ f = 450 MHz


    Original     		PDF MRF904 To-72 MRF904

    AN1907

    Abstract: MRF9045MR1 TO270
    Text: MOTOROLA Order this document by AN1907/D SEMICONDUCTOR APPLICATION NOTE AN1907 Surface Mount Solder Attach Method for the MRF9045MR1 in the TO-270 Plastic RF Package Prepared by: Wendi Stemmons, Jerry Mason, Rich Wetz, Tom Woods, Mahesh Shah and David Runton


    Original     		PDF AN1907/D AN1907 MRF9045MR1 O-270 AN1907 TO270

    Untitled

    Abstract: No abstract text available
    Text: Document Number: MRF9045N Rev. 12, 9/2008 Freescale Semiconductor Technical Data RF Power Field Effect Transistor MRF9045NR1 Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of this device


    Original     		PDF MRF9045N MRF9045NR1

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF9045MR1/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications at frequencies up to 1.0 GHz. The high gain and broadband performance of these devices


    Original     		PDF MRF9045MR1/D MRF9045MR1 MRF9045MBR1

    MRF904

    Abstract: MRF904 MOTOROLA
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF904 The RF Line NPN SILICON HIGH-FREQUENCY TRANSISTOR . . . designed for use as low-noise, high-gain, general purpose amplifiers. • High Current-Gain — Bandwidth Product — fy = 4.0 GHz Typ (<t 1(; = 15 mAdc


    OCR Scan     		PDF MIL-S-19500 MRF904HX, MRF904HXV MRF904 MRF904 MRF904 MOTOROLA