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    MRF905 Datasheets (8)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MRF905 Advanced Semiconductor NPN SILICON RF TRANSISTOR Original PDF
    MRF905 Motorola The European Selection Data Book 1976 Scan PDF
    MRF905 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    MRF905 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    MRF905 Unknown Transistor Replacements Scan PDF
    MRF905 Unknown Transistor Replacements Scan PDF
    MRF905 Unknown Transistor Replacements Scan PDF
    MRF905 Unknown Transistor Replacements Scan PDF

    MRF905 Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: MRF905 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)20 V(BR)CBO (V)35 I(C) Max. (A)150m Absolute Max. Power Diss. (W)750m Minimum Operating Temp (øC)-65 Maximum Operating Temp (øC)200þ I(CBO) Max. (A)100u @V(CBO) (V) (Test Condition)20


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    PDF MRF905

    MRF905

    Abstract: No abstract text available
    Text: L&11&IIJ -sSemi-Conductoi ZPioauoti, Una. C/ 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 TELEPHONE: (973 376-2922 (212) 227-6005 U.SA FAX: (973) 376-8960 MRF905 NPN SILICON RF TRANSISTOR DESCRIPTION: PACKAGE STYLE TO-46 MRF905 is Designed for General Purpose Oscillator


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    PDF MRF905 MRF905 150mA 100ioA 100mA 110mA

    Untitled

    Abstract: No abstract text available
    Text: MRF905 NPN SILICON RF TRANSISTOR DESCRIPTION: PACKAGE STYLE TO-46 The ASI MRF905 is Designed for General Purpose Oscillator Applications. C B 45° ØA FEATURES: ØD • VCC = 18 V • Omnigold Metalization System • Collector Connected to Case E F H G


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    PDF MRF905 MRF905

    MRF905

    Abstract: No abstract text available
    Text: MRF905 NPN SILICON RF TRANSISTOR DESCRIPTION: PACKAGE STYLE TO-46 The ASI MRF905 is Designed for General Purpose Oscillator Applications. FEATURES: • VCC = 20 V • Omnigold Metalization System • Collector Connected to Case MAXIMUM RATINGS IC 150 mA


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    PDF MRF905 MRF905

    MRF905

    Abstract: motorola MRF905 46bsc radiosonde
    Text: 4bE D MOTOROLA SC X S TR S /R F MOTOROLA SEM ICONDUCTOR b3b7254 O C m W 1 •MOTb T - 3 '- f t TECHNICAL DATA MRF905 # The RF Line 400 mW R F OSCILLATOR TRANSISTOR NPN SILICON NPN SILICON OSCILLATOR TRANSISTOR . . . designed for microwave com m unications relay links and low-cost


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    PDF b3b7254 MRF905 MRF905 motorola MRF905 46bsc radiosonde

    Motorola transistors MRF 947

    Abstract: trimpots 3296 transistor C5386 1n4740 2N5591 Motorola 2N5688 CQ 542 Transistor npn motorola equivalent transistor of 2sc3358 HB215/D ic cd 2399 gp
    Text: Selector Guide 1 Discrete Transistor Data Sheets Amplifier Data Sheets Monolithic Integrated Circuit H Data Sheets mm Case Dimensions Cross Reference and Sales Offices 6 M MOTOROLA RF Device Data This publication presents technical information for the several product families that


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    PDF 2PHX11136Q-17 Motorola transistors MRF 947 trimpots 3296 transistor C5386 1n4740 2N5591 Motorola 2N5688 CQ 542 Transistor npn motorola equivalent transistor of 2sc3358 HB215/D ic cd 2399 gp

    triac zd 607

    Abstract: 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845
    Text: MASTER SELECTION GUIDE EUROPEAN SUPPLEMENT This is the European supplement to the USA edition of the Master Selection Guide, SG73/D REV 3. It should be read along with the USA edition. The supplement carries amendments to sections 1 and 5 in the USA edition.


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    PDF SG73/D triac zd 607 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845

    2N4427 equivalent bfr91

    Abstract: bfr90 equivalent 2N5503 MRA1600-30 TPV-595A 2N3553 equivalent MRF477 equivalent MRA0500-19L 2N6084 equivalent MOTOROLA TRANSISTOR MRF239
    Text: RF Power TMOS FETs Motorola RF Power MOSFETs, trademark TMOS , are constructed using a planar process to enhance manufacturing repeatability. They are N-channet field effect transistors with an oxide insulated gate which controls vertical current flow. Compared with bipolar transistors, RF Power FETs exhibit higher gain, higher input impedance, enhanced therm al stability


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    PDF PoweS3666 MRF3866 2N2857 2N3866 2N5943 MRF904 MRF571 2N4958 2N3160 2N5583 2N4427 equivalent bfr91 bfr90 equivalent 2N5503 MRA1600-30 TPV-595A 2N3553 equivalent MRF477 equivalent MRA0500-19L 2N6084 equivalent MOTOROLA TRANSISTOR MRF239

    MRF306

    Abstract: 2N3866 2N6166 2n5643 transistors for oscillators uhf mrf313a 2N5641 MRF905 2n3866 211 2N5636
    Text: f Device Type ^ Pout O utput Power Watts g PE Power Gain dB Min. V cc Supply Voltage Volts Package 10 10 8.4 8.2 7.6 6.0 28 28 28 28 28 28 TO-39 TO-39 144B-04 145A-07 145A-07 211-10 A 10 10 16 Typ 16 (Typ) 12 6.2 11 5.7 9.0 10 4.6 6.0 6.0 8.0 8.0 28 28 28


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    PDF 2N3866 2N3553 2N5641 144B-04 45A-07 2N5643 2N6166 MRF509 07A-01 MRF306 transistors for oscillators uhf mrf313a MRF905 2n3866 211 2N5636

    MHW721A2

    Abstract: 13001 S 6D TRANSISTOR atv5030* motorola 2N5591 MOTOROLA 13001 6D TRANSISTOR BGY41 MHW710-1 construction linear amplifier 2sc1945 7119 amperex bf503
    Text: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide Amplifier Data Sheets 5 Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions 8 Cross Reference and Sales Offices 9 MOTOROLA RF DEVICE DATA


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    PDF 1PHX11136Q-14 MHW721A2 13001 S 6D TRANSISTOR atv5030* motorola 2N5591 MOTOROLA 13001 6D TRANSISTOR BGY41 MHW710-1 construction linear amplifier 2sc1945 7119 amperex bf503

    MRF515

    Abstract: motorola MRF515 radiosonde motorola MRF627 MRF905 MRF626
    Text: MOTOROLA SC C DIODES/OPTO} 34 DE |L.3t>75S5 003fi0Tl 1 34t 3 8 t m 3 6367255 MOTOROLA SC DIODES/OPTO ° SILICON RF TRANSISTOR DICE (continued) MRFC515 DIE NO. — NPN LINE SOURCE — RF502.83 This die provides performance equal to or better than that of


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    PDF 003fi0Tl RF502 MRF515 MRF626 MRF627 MRF905 MRFC515 0V/100 motorola MRF515 radiosonde motorola MRF627 MRF905

    A5 GNE mosfet

    Abstract: jo3501 2N4427 equivalent bfr91 2N503 2N5160 MOTOROLA BF431 BFR96 HY 1906 transistor jo2015 kd 2060 transistor
    Text: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide ^ Amplifier Data Sheets Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions Cross Reference and Sales Offices 8 9 MOTOROLA


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    PDF 1PHX11136Q-14 A5 GNE mosfet jo3501 2N4427 equivalent bfr91 2N503 2N5160 MOTOROLA BF431 BFR96 HY 1906 transistor jo2015 kd 2060 transistor

    radiosonde

    Abstract: MRF905
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The R F Line 400 mW R F O SCILLATOR TRANSISTOR NPN SILICON NPN SILICON O SCILLATOR TRANSISTOR . . . designed for microwave com m unications relay links and low-cost radiosonde service. Em itter Ballasted Lo w Current Density lor Improved Lifetim e


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    y51 h 120c

    Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
    Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK


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    PDF 500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711

    Motorola transistors MRF 947

    Abstract: motorola hep cross reference 2N5070 2N5591 MOTOROLA Semicon volume 1 mrf532 transistor equivalents for 2n3866 siemens semiconductor manual Microlab Splitter Specification sheet pt9797
    Text: MOTOROLA RF DATA MANUAL Prepared by Technical Information Center M otorola’s leadership position of RF power, small-signal transistors and hybrid amplifiers is by research and new product development coupled with a com plete in-house m anufacturing ca pa b ility in clu d in g silico n g row ing,


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