Untitled
Abstract: No abstract text available
Text: 2830 S. Fairview Street Santa Ana, CA 92704 Phone: 714 979-8220 Fax: (714) 559-5989 MSAGA11F120D Fast IGBT Die for Implantable Cardio Defibrillator Applications FEATURES: • • • • • • Low Forward Voltage Drop, Low Tail Current Avalanche and Surge Rated
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MSAGA11F120D
20KHz
MSAGA11F120DL,
MSC0947
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Mastech
Abstract: MSAGA11F120D IGBT 100V 100A
Text: SURGE EVALUATION OF IGBT DIE TYPE MSAGA11F120D PURPOSE: TO DETERMINE DEVICE SURVIVABILITY TO HIGH CURRENT PULSE TESTING SURGE AS DESCRIBED BELOW DATE: 2/4/99 1) Given the reduced timewidth of the current pulse (see #2 below) it was postulated that the package will
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MSAGA11F120D
MSAGA11F120D
400Apk,
00A/div
00V/div
Mastech
IGBT 100V 100A
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MSAGA11F120D
Abstract: MSAGA11F120DL 47MJ
Text: 2830 S. Fairview Street Santa Ana, CA 92704 Phone: 714 979-8220 Fax: (714) 559-5989 MSAGA11F120D DESCRIPTION: • N-Channel enhancement mode high density IGBT die • Passivation: Nitrid/Foroimid • Emitter Metallization: Al Si for aluminum wire bonding; Collector
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MSAGA11F120D
20KHz
MSAGA11F120DL,
MSC0947
MSAGA11F120D
MSAGA11F120DL
47MJ
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c 3421 transistor
Abstract: 010-0041 IC350 power IGBT HTGB MSAGA11F120D
Text: MSAGA11F120D WAFER LOT EVALUATION INTERNAL PROCESS SPECIFICATION IPS REV. 0, Approval _N/C_ QC LOT#:_ LOT DATE CODE:_ QUANTITY ISSUED:_ QUANTITY REQUIRED:_ SUMMARY MICROSEMI MSAGA11F120D data sheet REVISION:
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MSAGA11F120D
MSAGA11F120D
discretes\msae\MSAFX10N100AS
c 3421 transistor
010-0041
IC350
power IGBT
HTGB
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MED427-A1
Abstract: MED427A-1 LX1801 igbt 0201 a LX1802 MSAGA11F120D VDD800 MD427 IGBT microsemi HALF CONTROLLER BRIDGE notes
Text: MED427-A1 INTEGRATED PRODUCTS MicroPower High Voltage Half Bridge DATASHEET KEY FEATURES Miniature size, Multi Chip Module, MCM Significant Reduction Component to existing ½ Bridge Design Convenient mounting, Ball Grid Array, BGA Sn63/Pb37 solder bumps 250nA quiescent current
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MED427-A1
Sn63/Pb37
250nA
MED427-A1
MED427A-1
LX1801
igbt 0201 a
LX1802
MSAGA11F120D
VDD800
MD427
IGBT microsemi
HALF CONTROLLER BRIDGE notes
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Untitled
Abstract: No abstract text available
Text: MED427 High Voltage Half Bridge CARLSBAD DIVISION TARGET DATASHEET KEY FEATURES ! ! ! ! ! ! ! IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com Miniature size, Multi Chip Module, MCM Significant Reduction Component to existing ½
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MED427
MED427
LX1801
LX1802
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MED427A-1
Abstract: No abstract text available
Text: MED427-A1 High Voltage Half Bridge CARLSBAD DIVISION DATASHEET KEY FEATURES Miniature size, Multi Chip Module, MCM Significant Reduction Component to existing ½ Bridge Design Convenient mounting, Ball Grid Array, BGA Sn63/Pb37 solder bumps 250nA quiescent current
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MED427-A1
MED427-A1
LX1801
LX1802
MED427A-1
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defibrillator
Abstract: MSAGA11F120D MSAGA11F120DL
Text: N-Channel enhancement mode high density IGBT die Passivation: Polyimide, 20 um, over Silicon Nitride, .8um Emitter Metallization: Al/1%Si for aluminum wire bonding, 3.2 um typical. • Collector/Gate Metallization: Ti – Ni 1 um – Ag (0.2 um) for soft solder attach
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20KHz
MSAGA11F120DL,
MSAGA11F120D
MSC0947
defibrillator
MSAGA11F120D
MSAGA11F120DL
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Untitled
Abstract: No abstract text available
Text: • m a Santa Ana, CA m Micmsemi Progress Powered by Technology 2830 S. Fairview Street Santa Ana, CA 92704 Phone: 714 979-8220 Fax: (714)559-5989 MSAGA11F120D Fast IGBT Die for Implantable Cardio Defibrillator Applications DEECRPTICN: N-Channel enhancement mode high density IGBT die
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OCR Scan
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MSAGA11F120D
20KHz
MSAGA11F120Dtter
MSC0947
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