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    ophn

    Abstract: MSM411000-12RS dynamic ram binary cell 411000 CRS15
    Text: D Ë J b7SMSM0 OQDHS?^ 0 f O K I S E M I C O N D U C T O R G R O U P ÛT . . 6 7 2 4 2 4 Q O K I SEMICONDUCTOR. GROUP — _ _ 89D 0 2 5 7 9 D O K I semiconductor M S M 4 1 1 P O O R S 1,048,576-WORD X 1-BIT DYNAMIC RAM GENERAL DESCRIPTION The MSM411000RS is a new generation dynamic RAM organized as 1,048,576 words by 1 bit.


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    PDF 02S79 MSM411 576-WORD MSM411000RS 18-pin ophn MSM411000-12RS dynamic ram binary cell 411000 CRS15