MSM5100
Abstract: No abstract text available
Text: Vdd MSM5100 XTAL48_IN U-15 1 XTAL_OUT U-14 CCR48.0MXC7 V1H/V1L 3 V2H/V2L CL1 CL2 2 *BUILT-IN LOADING CAPACITOR CL1/CL2=8/8pF +/-20% Oscillating circuit for evaluation
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MSM5100
XTAL48
CCR48
MSM5100
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MSM5100
Abstract: No abstract text available
Text: Vdd MSM5100 XTAL48_IN U-15 1 XTAL_OUT U-14 CCR48.0MXC7J V1H/V1L 3 V2H/V2L CL1 CL2 2 *BUILT-IN LOADING CAPACITOR CL1/CL2=11.5/11.5pF +/-20% Oscillating circuit for evaluation
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MSM5100
XTAL48
CCR48
MSM5100
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BB 8615
Abstract: MSM5100 TA 8615 N
Text: MSM5I00 CCR48.0MXC7 Ta= 25 Cdeg] a. U1H/U1L CU] -.3 -.5 400 d. Trise 0 Typical » Worst_ m 0rr - B.- Ull £ b. U2H/U2L c, Fosc o *-— [U] U2H b .- -fl. =9 U2t ^ =9 [/] EuS] 300 200 100 70 e, Duty [/] 60 50 40 30 Udd f. Ustart
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MSM5I00
CCR48
BB 8615
MSM5100
TA 8615 N
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M5M51008AP
Abstract: RV-12L
Text: MITSUBISHI LSIs M5M51008AP,FP,VP,RV-70L,-85L,-1 OL, -12L,-70LL,-85LL,-1 OLL,-12LL 1048576-BIT 131072-WQRD B Y 8-BIT CMOS STATIC RAM DESCRIPTION The M5M51008AP, FP, VP, RV are a 1 0 4 8 5 7 6 -bit CMOS static RAM organized as 131072 word by 8 - bit which are
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M5M51008AP
RV-70L
-70LL
-85LL
-12LL
1048576-BIT(
131072-WQRD
M5M51008AP,
M5M51008AVP,
M5M51008AVP
RV-12L
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI LSIs M5M51008BP,FP,VP,RV,KV,KR-55L, -70L, -10L, -55LL,-70LL,-10LL 1048576-BIT 131072-WQRD BY 8-BITJCMOS STATIC RAM DESCRIPTION The M5M51008BP,FP,VP,RV,KV,KR are a 1048S76-bit CMOS static RAM organized as 131072-word by 8-bit which are fabricated using high-performance triple poiysiiicon CMOS
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M5M51008BP
KR-55L,
-55LL
-70LL
-10LL
1048576-BIT
131072-WQRD
1048S76-bit
131072-word
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI LSIs M5M51008BP,FP,VP,RV-55L, -70L, -10L, -55LL,-70LL,-1 OLL 1048576-BIT 131Q72-WOR D BY 8-BIT CMOS STATIC RAM DESCRIPTION The M5M51008BP,FP,VP,RV are a 1048576-bit CMOS static PIN CONFIGURATION (TOP VIEW) • V RAM organized as 131072-word by 8-bit which are fabricated
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M5M51008BP
RV-55L,
-55LL
-70LL
1048576-BIT
131Q72-WOR
131072-word
M5M51008BVP
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MSM5
Abstract: MSM51008
Text: # Low power dissipation static RAMs Low voltage op eratio n (Continued) Memory capacity Max. Memory Configuration Function mod« tin » (ns) 70 Low voltage Operation (3.0 to 3.6V) Ice (Power down) = 5,uA (max) = 0.1 ? A(typ) 85 Type No. M5M5512FP-70VXL ★
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32P2M-A
32P3H-E
32P3H-F
32P3K-B
32P3K-C
MSM5
MSM51008
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MSM5100
Abstract: B776 B324 B39B B544 B544 ec 1008704
Text: MSM 5 I00 - NEU CCR 48 .0MXC 7J Ta= 20 [degl a. U1H/U1L CU] o 0 Tupical — — lilnrst 4 U1H U t £ b. U 2H/U 2L 4 3 2 e — 9 b— _l_l_ [U] U2H b - e- e U2L 8- 8-.-B -I_ I_ I_ I_ I_ I_ L_
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MSM5100
CCR48
MSM5I00
characteristics75
B776
B324
B39B
B544
B544 ec
1008704
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Untitled
Abstract: No abstract text available
Text: bE M 'iö E S 0 0 2 4 Elöfi M 5 M b5 b • 5 1 l'IIT l 8 A F MITSUBISHILSIs P , V P , R V - - 1 1 2 2 V V L L L , , - 1 - 5 1 5 V L V L , L 1048576-BIT 131072-WORD BY 8-BIT CM0S STATIC RAM DESCRIPTION The M5M51008AFP, VP, RV are a 1048576-bit CMOS static
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1048576-BIT
131072-WORD
M5M51008AFP,
M5M51008AVP,
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Untitled
Abstract: No abstract text available
Text: bSMTÖSS D02MSbQ 547 • MITI MITSUBISHILSls M5M51008AP,FP,VP,RV-70L,-85L,-1 OL, -12L,-70LL,-85LL,-1 OLL,-12LL 1048576-BIT 131072-WQRD BY 8-BIT CMOS STATIC RAM DESCRIPTION The M 5 M 5 1 0 0 8 A P , FP, VP, RV are a 1 0 4 8 5 7 6 -b it CMOS PIN CONFIGURATION (TOP VIEW)
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D02MSbQ
M5M51008AP
RV-70L
-70LL
-85LL
-12LL
1048576-BIT
131072-WQRD
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MSM51008
Abstract: M5M51008 AI531
Text: MITSUBISHI LSIs M 5 M 5 1 8 F P , V P , R V - 1 5 V L , - 1 5 V L L 1048576- BIT 131072 - WORD BY 8-BIT CMOS STATIC RAM DESCRIPTION The M5M51008FP, VP. RV-15VLL are a 1048576-bit CMOS static RAM organized as 131072 word by 8 - bit which are fabricated using high-performance triple polysilicon CMOS
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M5M51008FP,
RV-15VLL
1048576-bit
MSM51008VP.
32-pin
M5M51008VP(
-15VL
-15VLL
MSM51008
M5M51008
AI531
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