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    MSM511000B Price and Stock

    OK International MSM511000B-70Z

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    MSM511000B Datasheets (42)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MSM511000B-10JS OKI Semiconductor 1,048,576-Word x 1-Bit DYNAMIC RAM: FAST PAGE MODE TYPE Scan PDF
    MSM511000B-10RS OKI Semiconductor 1,048,576-Word x 1-Bit DYNAMIC RAM: FAST PAGE MODE TYPE Scan PDF
    MSM511000B-10ZS OKI Semiconductor 1,048,576-Word x 1-Bit DYNAMIC RAM: FAST PAGE MODE TYPE Scan PDF
    MSM511000B-60JS OKI Semiconductor 1,048,576-Word x 1-Bit DYNAMIC RAM : FAST PAGE MODE TYPE Scan PDF
    MSM511000B-60JS OKI Semiconductor 1,048,576-Word x 1-Bit DYNAMIC RAM: FAST PAGE MODE TYPE Scan PDF
    MSM511000B-60RS OKI Semiconductor 1,048,576-Word x 1-Bit DYNAMIC RAM : FAST PAGE MODE TYPE Scan PDF
    MSM511000B-60RS OKI Semiconductor 1,048,576-Word x 1-Bit DYNAMIC RAM: FAST PAGE MODE TYPE Scan PDF
    MSM511000B-60ZS OKI Semiconductor 1,048,576-Word x 1-Bit DYNAMIC RAM: FAST PAGE MODE TYPE Scan PDF
    MSM511000B-60ZS OKI Semiconductor 1,048,576-Word x 1-Bit DYNAMIC RAM : FAST PAGE MODE TYPE Scan PDF
    MSM511000B-70JS OKI Semiconductor 1,048,576-Word x 1-Bit DYNAMIC RAM : FAST PAGE MODE TYPE Scan PDF
    MSM511000B-70JS OKI Semiconductor 1,048,576-Word x 1-Bit DYNAMIC RAM: FAST PAGE MODE TYPE Scan PDF
    MSM511000B-70RS OKI Semiconductor 1,048,576-Word x 1-Bit DYNAMIC RAM : FAST PAGE MODE TYPE Scan PDF
    MSM511000B-70RS OKI Semiconductor 1,048,576-Word x 1-Bit DYNAMIC RAM: FAST PAGE MODE TYPE Scan PDF
    MSM511000B-70ZS OKI Semiconductor 1,048,576-Word x 1-Bit DYNAMIC RAM: FAST PAGE MODE TYPE Scan PDF
    MSM511000B-70ZS OKI Semiconductor 1,048,576-Word x 1-Bit DYNAMIC RAM : FAST PAGE MODE TYPE Scan PDF
    MSM511000B-80JS OKI Semiconductor 1,048,576-Word x 1-Bit DYNAMIC RAM: FAST PAGE MODE TYPE Scan PDF
    MSM511000B-80JS OKI Semiconductor 1,048,576-Word x 1-Bit DYNAMIC RAM : FAST PAGE MODE TYPE Scan PDF
    MSM511000B-80RS OKI Semiconductor 1,048,576-Word x 1-Bit DYNAMIC RAM : FAST PAGE MODE TYPE Scan PDF
    MSM511000B-80RS OKI Semiconductor 1,048,576-Word x 1-Bit DYNAMIC RAM: FAST PAGE MODE TYPE Scan PDF
    MSM511000B-80ZS OKI Semiconductor 1,048,576-Word x 1-Bit DYNAMIC RAM: FAST PAGE MODE TYPE Scan PDF

    MSM511000B Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    playback recorder

    Abstract: VOICE RECORDER IC MSM6788 MSM6789A MSM6789L MSM5116100A
    Text: ¡ Semiconductor MSM6789A/6789L ¡ Semiconductor MSM6789A/6789L SBC Solid-State Recorder IC GENERAL DESCRIPTION The MSM6789A/6789L, an improved version of MSM6788, is a solid-state recorder developed using the Sub Band Coding SBC method. Just like MSM6788, the MSM6789A/6789L has a stand-alone mode and a microcontroller interface


    Original
    MSM6789A/6789L MSM6789A/6789L, MSM6788, MSM6789A/6789L MSM6596A-XXX A5-A10 playback recorder VOICE RECORDER IC MSM6788 MSM6789A MSM6789L MSM5116100A PDF

    MSM511000

    Abstract: ZIP20-P-400 dip26
    Text: O K I Semiconductor MSM511000B/BL_ 1,048,576-Word x 1-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM511000B/BL is a 1,048,576-word x 1-bit dynamic RAM fabricated in OKI's CMOS silicon gate technology. The MSM511000B/BL achieves high integration, high-speed operation, and lowpower consumption due to quadruple polysilicon single metal CMOS. The MSM511000B/BL is


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    MSM511000B/BL 576-Word MSM511000B/BL 18-pin 26/20-pin 20-pin MSM511000BL MSM511000 ZIP20-P-400 dip26 PDF

    1ST24

    Abstract: MSC2312B-70YS9
    Text: O K I Semiconductor M SC2312B-xxYS9/KS9 1,048,576-Word by 9-Bit DRAM Module: Fast Page Mode D ESC R IP TIO N The OKI M SC 2312B -xxY S9/K S9 is a fully decoded 1,048,576-w ord x 9-bit CM O S D ynam ic Random Access Memory Module com posed of nine 1-Mb DRAM s in SOJ MSM511000B packages mounted with


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    MSC2312B-xxYS9/KS9 576-Word MSC2312B-xxYS9/KS9 MSM511000B) 30-pin MSC2312B-xxYS9: MSC2312B-xxKS9: b724240 1ST24 MSC2312B-70YS9 PDF

    Untitled

    Abstract: No abstract text available
    Text: O K I Semiconductor MSM5110 OOB/BL_ 1,048,576-Word x 1-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM511000B/BL is a 1,048,576-w ord x 1-bit dynamic RAM fabricated in OKI's CMOS silicon gate technology. The MSM511000B/BL achieves high integration, high-speed operation, and lowpow er consumption due to quadruple polysilicon single metal CMOS. The MSM511000B/BL is


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    MSM511000B/MSM511000BL 576-Word MSM511000B/BL 576-w 18-pin 26/20-pin 20-pin MSM511000BL PDF

    Untitled

    Abstract: No abstract text available
    Text: O K I Semiconductor MSM5110OOB/BL_ 1,048,576-Word x 1-Bit DYN A M IC RAM : FAST PAGE M O D E TYPE DESCRIPTION The MSM511000B/BL is a 1,048,576-word x 1-bit dynamic RAM fabricated in OKI's CMOS silicon gate technology. The MSM511000B/BL achieves high integration, high-speed operation, and lowpower consumption due to quadruple polysilicon single metal CMOS. The MSM511000B/BL is


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    MSM5110OOB/BL_ 576-Word MSM511000B/BL 18-pin 26/20-pin 20-pin MSM511000BL PDF

    diagram of hi 3520

    Abstract: No abstract text available
    Text: O K I Semiconductor MSC2313B-xxYS8/KS8 1,048,576-Word by 8-Bit DRAM Module: Fast Page Mode D ESC R IPTIO N The O KI M SC 2313B -xxY S8/K S8 is a fully decoded 1,048,576-w ord x 8-bit CM O S D ynam ic Random Access Memory Module composed of eight 1-Mb DRAMs in SOJ MSM511000B packages mounted with


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    MSC2313B-xxYS8/KS8 576-Word MSC2313B-xxYS8/KS8 MSM511000B) 30-pin MSC2313B-xxYS8: MSC2313B-xxKS8: 72H24Ã diagram of hi 3520 PDF

    bl 9 a2

    Abstract: 18-PIN 20-PIN 26-PIN ZIP20-P-400
    Text: O K I Sem iconductor M SM 511000B /B L _ 1,048,576-Word x 1-Bit DYNAM IC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM511000B/BL is a new generation dynamic RAM organized as 1,048,576-word x 1-bit. The technology used to fabricate the MSM511000B/BL is OKI’s CMOS silicon gate process technology.


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    MSM511000B/BL_ 576-Word MSM511000B/BL cycles/64ms MSM5110OOB/BL 242i4D 00177fa3 bl 9 a2 18-PIN 20-PIN 26-PIN ZIP20-P-400 PDF

    Untitled

    Abstract: No abstract text available
    Text: O K I Semiconductor MSC2312B-xxYS9/KS9 1,048,576-Word by 9-Bit DRAM Module: Fast Page Mode DESCRIPTION The OKI M SC2312B-xxYS9/KS9 is a fully decoded 1,048,576-word x 9-bit CMOS Dynamic Random Access Memory Module composed of nine 1-Mb DRAMs in SOJ MSM511000B packages mounted with


    OCR Scan
    MSC2312B-xxYS9/KS9 576-Word SC2312B-xxYS9/KS9 MSM511000B) 30-pin MSC2312B-xxYS9: MSC2312B-xxKS9: PDF

    Untitled

    Abstract: No abstract text available
    Text: OKI Semiconductor MSIW5110OOB/BL_ 1,048,576-Word x 1-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM511000B/BL is a new generation dynamic RAM organized as 1,048,576-word x 1-bit. The technology used to fabricate the MSM511000B/BL is OKI’s CMOS silicon gate process technology.


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    MSIW5110OOB/BL_ 576-Word MSM511000B/BL cycles/64ms b72424G 00177b2 MSM511000B/BL PDF

    Untitled

    Abstract: No abstract text available
    Text: O K I Semiconductor MSC2313B-xxYS8/KS8 1,048,576-Word by 8-Bit DRAM Module: Fast Page Mode DESCRIPTION The OKI MSC2313B-xxYS8/KS8 is a fully decoded 1,048,576-word x 8-bit CMOS Dynamic Random Access Memory M odule composed of eight 1-Mb DRAMs in SOJ MSM511000B packages m ounted with


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    MSC2313B-xxYS8/KS8 576-Word MSC2313B-xxYS8/KS8 MSM511000B) 30-pin MSC2313B-xxYS8: MSC2313B-xxKS8: 2424D PDF

    BL-70

    Abstract: No abstract text available
    Text: O K I semiconductor MSM511000B/BL 1,048,576-W ord x 1-Bit DYNAM IC RAM GENERAL DESCRIPTION The MSM511000 B/BL is a new generation dynamic RAM organized as 1,048,576-words x 1bit. The technology used to fabricate the MSM511000 B/BL is OKI's CMOS silicon gate process technology. The


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    MSM511000B/BL MSM511000 576-words MSM5110OOB/BLÂ W7777/777/77M7? M77777777/7, BL-70 PDF

    Untitled

    Abstract: No abstract text available
    Text: O K I Semiconductor MSC2313B-xxYS8/KS8 1,048,576-Word by 8-Bit ORAM Module: Fast Page Mode DESCRIPTION The OKI MSC2313B-xxYS8/KS8 is a fully decoded 1,048,576-w ord x 8-bit CMOS Dynamic Random Access Memory M odule composed of eight 1-Mb DRAMs in SOJ MSM511000B packages m ounted with


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    MSC2313B-xxYS8/KS8 576-Word MSC2313B-xxYS8/KS8 576-w MSM511000B) 30-pin MSC2313B-xxYS8: MSC2313B-xxKS8: PDF

    Untitled

    Abstract: No abstract text available
    Text: O K I Semiconductor MSM6789A/6789L SBC Solid-State Recorder 1C GENERAL DESCRIPTION The M SM 6789A /6789L, an improved version of MSM6788, is a solid-state recorder developed using the Sub Band Coding SBC method. Just like MSM6788, the M SM 6789A/6789L has a stand-alone mode and a microcontroller interface


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    MSM6789A/6789L /6789L, MSM6788, 789A/6789L MSM6789A /6789L MSM6789L PDF

    TT 104 N 14 KOF

    Abstract: SC2313
    Text: O K I Semiconductor MSC23136B/BL-xxBS12/DS12 1,048,576-Word by 36-Bit DRAM Module: Fast Page Mode DESCRIPTION The OKI MSC23136B/BL-xxBS12/DS12 is a fully decoded 1,048,576-word x 36-bit CMOS Dynamic Ran­ dom Access Memory M odule composed of eight 4-Mb DRAMs in SOJ MSM514400B/BL packages and


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    MSC23136B/BL-xxBS12/DS12 576-Word 36-Bit MSC23136B/BL-xxBS12/DS12 MSM514400B/BL) MSM511000B/BL) 72-pin TT 104 N 14 KOF SC2313 PDF

    Untitled

    Abstract: No abstract text available
    Text: O K I Semiconductor MSC 23S 136B/BL-XXBS 12/DS12 1,048,576-Word by 36-Bit DRAM Module: Fast Page Mode DESCRIPTION The OKI MSC23S136B/BL-xxBS12/DS12 is a fully decoded 1,048,576-word x 36-bit CMOS dynamic Ran­ dom Access Memory module composed of eight 4-Mb DRAMs in SOJ MSM514400B/BL packages and


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    136B/BL-XXBS 12/DS12 576-Word 36-Bit MSC23S136B/BL-xxBS12/DS12 MSM514400B/BL) MSM511000B/BL) 72-pin PDF

    VOICE RECORDER IC

    Abstract: 761A3 voice activated recorder circuit voice recorder circuit VOICE RECORDER circuits MSM6788 MSM6789A MSM6789L
    Text: O K I Semiconductor MSM6789A/6789L SBC Solid-State Recorder 1C G EN ER A L DESCRIPTION The M SM 6789A /6789L, an improved version of MSM6788, is a solid-state recorder developed using the Sub Band Coding SBC method. Just like MSM6788, the M SM 6789A/6789L has a stand-alone mode and a microcontroller interface


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    MSM6789A/6789L MSM6789A /6789L, MSM6788, MSM6789A/6789L /6789L QFP100-P-1420-0 VOICE RECORDER IC 761A3 voice activated recorder circuit voice recorder circuit VOICE RECORDER circuits MSM6788 MSM6789L PDF

    Untitled

    Abstract: No abstract text available
    Text: O K I Semiconductor MTC8108M38-xx2A1 -01 DRAM CARD DESCRIPTION The MTC8108M36-xx2Al-01 is a 8M-byte dynamic RAM card composed of 2M-word x 36-bit, being a 88-pin 2-piece type card proposed by the DRAM card guide-line of JEIDA. This provides a built-in buffer IC together with the DRAM device.


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    MTC8108M38-xx2A1 MTC8108M36-xx2Al-01 36-bit, 88-pin 152-word 36-bit /128ms MTC810eM36-xx2A1-01 MTCei06M36-xx2A1-01 PDF

    A7E1

    Abstract: No abstract text available
    Text: O K I semiconductor M S M 5 1 1 0 0 0 B /B L 1,048,576-W ord x 1-Bit DYNAM IC RAM GENERAL DESCRIPTION The MSM511000 B/BL is a new generation dynamic RAM organized as 1,048,576-words x 1bit. The technology used to fabricate the MSM511000 B/BL is OKI's CMOS silicon gate process technology. The


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    MSM511000 576-words MSM511000B/BL A7E1 PDF