Cherie
Abstract: t3d25
Text: |U 1IC =R O N DRAM k - _ Ä 2 56K X MT3D2569 9 DRAM MODULE 256K x 9 DRAM _ FAST PAGE MODE MT3D2569 LOW POWER, F EXTENDED V T F N n P D RF REFRESH (MT3D2569 L) M O D IW 1I^ FL — FEATURES MARKING • Timing 60ns access 70ns access 80ns access -6 -7 -8 • Packages
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MT3D2569
30-pin
625mW
512-cycle
MT3D2569)
30DON
MT3D2568
T3D2569
Cherie
t3d25
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256k 30-pin SIMM
Abstract: No abstract text available
Text: I^ IIC R O N 256K X MT3D2569 9 DRAM MODULE 256K X 9 DRAM DRAM MODULE FAST PAGE MODE MT3D2569 LOW POWER, EXTENDED REFRESH (MT3D2569 L) FEATURES PIN ASSIGNMENT (Top View) • Industry standard pinout in a 30-pin single-in-line memory module • High-performance, CMOS silicon-gate process
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MT3D2569
30-pin
625mW
512-cycle
MT3D2569)
256k 30-pin SIMM
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MT4C1024DJ
Abstract: MT302569
Text: MICRON I TECHNOLOGY. INC. SSE I> niCRON TECHNOLOGY INC • MT3D2569 256K x 9 DRAM M bill 5 4=1 G0DH7G7 T5Q ■ URN 256K x 9 DRAM DRAM MODULE FAST PAGE MODE MT3D2569 LOW POWER, EXTENDED REFRESH (MT3D2569 L) FEATURES • Industry standard pinout in a 30-pin single-in-line
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OCR Scan
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MT3D2569
30-pin
625mW
512-cycle
MT3D2569)
125US
Q00471L
MT4C1024DJ
MT302569
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MT8C
Abstract: No abstract text available
Text: M I CR ON T E C H N O L O G Y INC L muii.c i biiiSMT 0002335 3 ñE D ni»B¡wywn^B^ . w t IMRN r r ~ y ¿ -2 3 -/7 1»I ' n i i - fi ; K ' -i «ü iS n U - ififi i J i a i • tr iù tfr m u lti.M ' REPLACES: MT8C9256 and MT8C9257 256K X 9 DRAM DRAM MODULE
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MT8C9256
MT8C9257)
30-pin
625mW
512-cycle
QDQ2343
WT8C9256
MT8C
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