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    MT3S07T Search Results

    MT3S07T Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MT3S07T Unknown Silicon NPN Transistor Scan PDF
    MT3S07T Toshiba Transistor Silicon NPN Epitaxial Planar Type Scan PDF
    MT3S07T Toshiba Scan PDF

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    Untitled

    Abstract: No abstract text available
    Text: MT6L55FS TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT6L55FS VHF~UHF Band Low-Noise Amplifier Applications Unit: mm 1.0±0.05 0.8±0.05 Q2 MT3S07T MT3S05T MT3S07FS (MT3S05FS) Corresponding three-pin products: TESM(fSM) mold products Rating Symbol


    Original     		PDF MT6L55FS MT3S07T MT3S07FS) MT3S05T MT3S05FS)

    Untitled

    Abstract: No abstract text available
    Text: MT6L63FS TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT6L63FS VHF~UHF Band Low-Noise Amplifier Applications Unit: mm Two devices are incorporated in a fine-pitch, small-mold package 6 pins : fS6. TESM(fSM) mold products Q2 MT3S07T MT3S11T (MT3S07FS)


    Original     		PDF MT6L63FS MT3S07T MT3S07FS) MT3S11T MT3S11FS)

    MT3S05FS

    Abstract: MT3S05T MT3S07FS MT3S07T MT6L55FS
    Text: MT6L55FS TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT6L55FS VHF~UHF Band Low-Noise Amplifier Applications Unit: mm 1.0±0.05 0.8±0.05 TESM fSM mold products 6 2 5 3 4 +0.02 Q1 Q2 MT3S07T MT3S05T (MT3S07FS) (MT3S05FS) Corresponding three-pin products:


    Original     		PDF MT6L55FS MT3S07T MT3S05T MT3S07FS) MT3S05FS) MT3S05FS MT3S05T MT3S07FS MT3S07T MT6L55FS

    MA1012

    Abstract: MT3S07T
    Text: MT3S07T 東芝トランジスタ シリコンNPNエピタキシャルプレーナ形 MT3S07T ○ VHF~UHF 帯低電圧動作•低雑音タイプ • 単位: mm 雑音特性が優れています。 : NF = 1.5dB VCE = 3 V, IC = 5 mA, f = 2 GHz : |S21e|2 = 9.5dB


    Original     		PDF MT3S07T MA1012 MT3S07T

    014E

    Abstract: 200E 800E MT3S07T
    Text: MT3S07T SPICE parameters UCB SPICE2G6 20020401 NET LIST .SUBCKT Re1 Re2 Le1 Le2 Ceg1 Ceg2 Rb1 Rb2 Lb1 Lb2 Cbg1 Cbg2 Rc1 Rc2 Lc1 Lc2 Ccg1 Ccg2 Cbe1 Cbc1 Cce1 Cbe2 Le3 Re3 Lb3 Rb3 Cbe3 Cce2 Cbc2 MT3S07T 1 2 3 3 18 2.014E-02 9 19 2.014E-02 6 18 2.260E-10 6 19


    Original     		PDF MT3S07T 014E-02 260E-10 800E-13 346E-14 014E 200E 800E

    MT3S07FS

    Abstract: MT3S07T MT3S11FS MT3S11T MT6L63FS
    Text: MT6L63FS TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT6L63FS VHF~UHF Band Low-Noise Amplifier Applications Unit: mm Two devices are incorporated in a fine-pitch, small-mold package 6 pins : fS6. Q2 MT3S07T MT3S11T (MT3S07FS) (MT3S11FS) 2 5 3 4 0.15±0.05


    Original     		PDF MT6L63FS MT3S11FS) MT3S11T MT3S07FS) MT3S07T MT3S07FS MT3S07T MT3S11FS MT3S11T MT6L63FS

    Untitled

    Abstract: No abstract text available
    Text: MT3S07T TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S07T VHF~UHF Band Low Noise Amplifier Applications • Low noise figure: NF = 1.5dB VCE = 3 V, IC = 5 mA, f = 2 GHz • High gain: |S21e|2 = 9.5dB (VCE = 3 V, IC = 15 mA, f = 2 GHz) Unit: mm


    Original     		PDF MT3S07T

    MT3S07FS

    Abstract: MT3S07T MT3S11FS MT3S11T MT6L63FS
    Text: MT6L63FS TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT6L63FS VHF~UHF Band Low-Noise Amplifier Applications Unit: mm Two devices are incorporated in a fine-pitch, small-mold package 6 pins : fS6. Q2 MT3S07T MT3S11T (MT3S07FS) (MT3S11FS) 2 5 3 4 0.15±0.05


    Original     		PDF MT6L63FS MT3S11FS) MT3S11T MT3S07FS) MT3S07T MT3S07FS MT3S07T MT3S11FS MT3S11T MT6L63FS

    MT3S07T

    Abstract: No abstract text available
    Text: MT3S07T TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S07T VHF~UHF Band Low Noise Amplifier Applications • Low noise figure: NF = 1.5dB VCE = 3 V, IC = 5 mA, f = 2 GHz • High gain: |S21e|2 = 9.5dB (VCE = 3 V, IC = 15 mA, f = 2 GHz) Unit: mm


    Original     		PDF MT3S07T MT3S07T

    MT3S07T

    Abstract: No abstract text available
    Text: MT3S07T TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S07T VHF~UHF Band Low Noise Amplifier Applications • Low noise figure: NF = 1.5dB VCE = 3 V, IC = 5 mA, f = 2 GHz • High gain: |S21e|2 = 9.5dB (VCE = 3 V, IC = 15 mA, f = 2 GHz) Unit: mm


    Original     		PDF MT3S07T MT3S07T

    Untitled

    Abstract: No abstract text available
    Text: MT6L63FS TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT6L63FS VHF~UHF Band Low-Noise Amplifier Applications Unit: mm Two devices are incorporated in a fine-pitch, small-mold package 6 pins : fS6. MT3S07T MT3S11T (MT3S07FS) (MT3S11FS) Maximum Ratings (Ta = 25°C)


    Original     		PDF MT6L63FS MT3S07T MT3S07FS) MT3S11T MT3S11FS)

    Untitled

    Abstract: No abstract text available
    Text: MT6L63FS TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT6L63FS VHF~UHF Band Low-Noise Amplifier Applications Unit: mm Two devices are incorporated in a fine-pitch, small-mold package 6 pins : fS6. Q2 MT3S07T MT3S11T (MT3S07FS) (MT3S11FS) Rating Symbol


    Original     		PDF MT6L63FS MT3S07T MT3S07FS) MT3S11T MT3S11FS)

    Untitled

    Abstract: No abstract text available
    Text: MT6L55FS TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT6L55FS VHF~UHF Band Low-Noise Amplifier Applications Unit: mm 1.0±0.05 0.8±0.05 TESM fSM mold products Q2 MT3S07T MT3S05T (MT3S07FS) (MT3S05FS) Maximum Ratings (Ta = 25°C) Characteristic fS6


    Original     		PDF MT6L55FS MT3S07T MT3S07FS) MT3S05T MT3S05FS)

    Untitled

    Abstract: No abstract text available
    Text: MT6L55E Preliminary TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT6L55E VHF-UHF Band Low Noise Amplifier Application VHF-UHF Band Oscillator Application • Unit: mm Two devices are built into the super-thin and ultra-super-mini 6-pin ES6 package.


    Original     		PDF MT6L55E MT3S07S MT3S07T) MT3S05T

    Untitled

    Abstract: No abstract text available
    Text: MT6L55S TOSHIBA Transistor Silicon NPN Epitaxial Planar Type Preliminary MT6L55S VHF-UHF Band Low Noise Amplifier Application VHF-UHF Band Oscillator Application • Unit: mm Two devices are built into the sES6 package, which is smaller and thinner than the super-thin and ultra-super-mini 6-pin ES6


    Original     		PDF MT6L55S MT3S07S MT3S07T) MT3S005T 40ments,

    Untitled

    Abstract: No abstract text available
    Text: MT6L55E TOSHIBA Transistor Silicon NPN Epitaxial Planar Type Preliminary MT6L55E VHF-UHF Band Low Noise Amplifier Application VHF-UHF Band Oscillator Application • Unit: mm Two devices are built into the super-thin and ultra-super-mini 6-pin ES6 package.


    Original     		PDF MT6L55E MT3S07S MT3S07T) MT3S005T

    MT6L55E

    Abstract: MT3S07S MT3S07T
    Text: MT6L55E TOSHIBA Transistor Silicon NPN Epitaxial Planar Type Preliminary MT6L55E VHF-UHF Band Low Noise Amplifier Application VHF-UHF Band Oscillator Application • Unit: mm Two devices are built into the super-thin and ultra-super-mini 6-pin ES6 package.


    Original     		PDF MT6L55E MT3S07S MT3S07T) MT3S005T MT6L55E MT3S07S MT3S07T

    MT3S07S

    Abstract: MT3S07T MT3S08T MT6L56S
    Text: MT6L56S TOSHIBA Transistor Silicon NPN Epitaxial Planar Type Preliminary MT6L56S VHF-UHF Band Low Noise Amplifier Application VHF-UHF Band Oscillator Application • Unit: mm Two devices are built into the sES6 package, which is smaller and thinner than the super-thin and ultra-super-mini 6-pin ES6


    Original     		PDF MT6L56S MT3S07S MT3S07T) MT3S08T MT3S07S MT3S07T MT3S08T MT6L56S

    TA4029CTC

    Abstract: TA4032FT TB7602TU MT4S300T MT4S300U MT4S301T TA4029TU SOT-24 MT4S300 RFM12U7X
    Text: 製品カタログ 2011-1 東芝半導体 製品カタログ 高周波用半導体デバイス SEMICONDUCTOR h t t p : / / w w w . s e m i c o n . t o s h i b a . c o . j p / C O N T E N T S 1 アプリケーション別推奨製品 .3~8


    Original     		PDF BCJ0003G BCJ0003F TA4029CTC TA4032FT TB7602TU MT4S300T MT4S300U MT4S301T TA4029TU SOT-24 MT4S300 RFM12U7X

    MT3S07T

    Abstract: No abstract text available
    Text: TO SH IBA MT3S07T TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE MT3S07T VH F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS Unit in mm 1.2 ± 0.05 NF = 1.5 dB Vf!F, = 3 V, In = 5 mA, f = 2 GHz Low Noise Figure • High Gain 0.8 ± 0.05 : IS o i J2 = Q K r\T\


    OCR Scan     		PDF MT3S07T MT3S07T

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MT3S07T TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE MT3S07T Unit in mm VHF-U HF BAND LOW NOISE AMPLIFIER APPLICATIONS • • 1.2 ±0.05 0.8 ± 0.05 Low Noise Figure : NF = 1.5 dB VCE = 3 V, IC = 5 mA, f = 2 GHz High Gain : |S2i e|2 = 9.5 dB


    OCR Scan     		PDF MT3S07T

    MT3S07T

    Abstract: No abstract text available
    Text: TO SH IBA MT3S07T TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE MT3S07T VH F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS Unit in mm 1.2 ±0 .0 5 NF = 1.5 dB Vf!F, = 3 V, In = 5 mA, f = 2 GHz Low Noise Figure • High Gain 0.8 ± 0.05 : IS o i J2 = Q K r\T\


    OCR Scan     		PDF MT3S07T MT3S07T

    Untitled

    Abstract: No abstract text available
    Text: TO SH IBA MT3S07T TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE MT3S07T Unit in mm VHF—UHF BAND LOW NOISE AMPLIFIER APPLICATIONS • • 1.2 ±0.05 0.8 ± 0.05 Low Noise Figure : NF = 1.5 dB V C E = 3V, IC = 5mA, f = 2 GHz High Gain : |S2le|2 = 9-5 dB


    OCR Scan     		PDF MT3S07T S21el2

    Untitled

    Abstract: No abstract text available
    Text: TO SH IBA MT6L59E TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE MT6L59E V H F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • Unit in mm TWO devices are built in to the super-thin and ultra super mini 6 pins package : ES6 y m i M T c n n c x / ir c c


    OCR Scan     		PDF MT6L59E MT3S06S MT3S06T) MT3S07S MT3S07T)