MT3S113 Search Results
MT3S113 Price and Stock
Toshiba America Electronic Components MT3S113TU,LFRF TRANS NPN 5.3V 11.2GHZ UFM |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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MT3S113TU,LF | Cut Tape | 2,502 | 1 |
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MT3S113TU,LF | Reel | 12 Weeks | 3,000 |
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MT3S113TU,LF | 2,194 |
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Toshiba America Electronic Components MT3S113(TE85L,F)RF TRANS NPN 5.3V 12.5GHZ S MINI |
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MT3S113(TE85L,F) | Cut Tape | 1,617 | 1 |
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MT3S113(TE85L,F) | Reel | 111 Weeks | 3,000 |
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Toshiba America Electronic Components MT3S113P(TE12L,F)RF TRANS NPN 5.3V 7.7GHZ PW-MINI |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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MT3S113P(TE12L,F) | Reel | 1,000 |
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MT3S113P(TE12L,F) | Reel | 111 Weeks | 1,000 |
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MT3S113 Datasheets (9)
Part |
ECAD Model |
Manufacturer |
Description |
Curated |
Datasheet Type |
PDF |
PDF Size |
Page count |
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MT3S113 |
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Japanese - Transistors | Original | 250.12KB | 7 | |||
MT3S113 |
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Transistors | Original | 203.28KB | 7 | |||
MT3S113P |
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Transistors | Original | 184.59KB | 7 | |||
MT3S113P |
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Japanese - Transistors | Original | 254.38KB | 7 | |||
MT3S113P(TE12L,F) |
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Discrete Semiconductor Products - Transistors - Bipolar (BJT) - RF - RF SIGE HETEROJUNCTION BIPOLAR N | Original | 199.18KB | ||||
MT3S113(TE85L,F) |
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Discrete Semiconductor Products - Transistors - Bipolar (BJT) - RF - RF SIGE HETEROJUNCTION BIPOLAR N | Original | 218.69KB | ||||
MT3S113TU |
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Japanese - Transistors | Original | 245.48KB | 7 | |||
MT3S113TU |
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Transistors | Original | 177.96KB | 7 | |||
MT3S113TU,LF |
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Discrete Semiconductor Products - Transistors - Bipolar (BJT) - RF - RF SIGE HETEROJUNCTION BIPOLAR N | Original | 192.64KB |
MT3S113 Datasheets Context Search
Catalog Datasheet |
Type |
Document Tags |
PDF |
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MT3S113
Abstract: transistor 2F to-236 4360A
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MT3S113 O-236 SC-59 MT3S113 transistor 2F to-236 4360A | |
Contextual Info: MT3S113 TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type MT3S113 VHF-UHF Band Low-Noise, Low-Distortion Amplifier Applications Unit: mm FEATURES • Low Noise Figure:NF=1.15dB Typ. (@ f=1GHz) • High Gain:|S21e|2=11.8dB(Typ.) (@ f=1GHz) Marking |
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MT3S113 O-236 SC-59 | |
mt3s113pContextual Info: MT3S113P TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type MT3S113P VHF-UHF Band Low-Noise, Low-Distortion Amplifier Applications Unit: mm FEATURES • Low Noise Figure:NF=1.15dB Typ. (@ f=1GHz) • High Gain:|S21e|2=10.5dB(Typ.) (@ f=1GHz) Marking |
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MT3S113P SC-62 mt3s113p | |
Contextual Info: MT3S113P TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type MT3S113P VHF-UHF Band Low-Noise, Low-Distortion Amplifier Applications Unit: mm FEATURES • Low Noise Figure:NF = 1.15dB typ. (@ f=1GHz) • High Gain:|S21e| = 10.5dB (typ.) (@ f=1GHz) |
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MT3S113P SC-62 | |
Contextual Info: MT3S113 東芝トランジスタ シリコンゲルマニウムNPNエピタキシャルプレーナ形 MT3S113 ○ VHF~UHF 帯 特 低雑音・低歪み増幅用 単位: mm 長 • 雑音特性が優れています。:NF=1.15dB 標準 (@ f=1GHz) • 高利得です。:|S21e|2=11.8dB(標準) (@ f=1GHz) |
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MT3S113 O-236 | |
MT3S113TUContextual Info: MT3S113TU TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type MT3S113TU VHF-UHF Band Low-Noise, Low-Distortion Amplifier Applications Unit: mm 2.1±0.1 3 1.1. 2.2. 3.3. R7 1 1 3 2 0.7±0.05 Marking +0.1 0.3 -0.05 High Gain:|S21e|2=12.5dB Typ. (@ f=1GHz) |
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MT3S113TU MT3S113TU | |
Contextual Info: MT3S113P TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type MT3S113P VHF-UHF Band Low-Noise, Low-Distortion Amplifier Applications Unit: mm FEATURES • Low Noise Figure:NF=1.15dB Typ. (@ f=1GHz) • High Gain:|S21e|2=10.5dB(Typ.) (@ f=1GHz) Marking |
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MT3S113P SC-62 | |
Contextual Info: MT3S113TU TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type MT3S113TU VHF-UHF Band Low-Noise, Low-Distortion Amplifier Applications Unit: mm 2.1±0.1 3 3 2 1.1. Base 2.2. Emitter 3.3. Collector R7 1 1 0.7±0.05 Marking +0.1 0.3 -0.05 High Gain:|S21e|2=12.5dB Typ. (@ f=1GHz) |
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MT3S113TU | |
Contextual Info: MT3S113P 東芝トランジスタ シリコンゲルマニウムNPNエピタキシャルプレーナ形 MT3S113P ○ VHF~UHF 帯 特 低雑音・低歪み増幅用 単位: mm 長 • 雑音特性が優れています。:NF=1.15dB 標準 (@ f=1GHz) • 高利得です。:|S21e|2=10.5dB(標準) (@ f=1GHz) |
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MT3S113P SC-62 | |
Contextual Info: MT3S113TU 東芝トランジスタ シリコンゲルマニウムNPNエピタキシャルプレーナ形 MT3S113TU ○ VHF~UHF 帯 低雑音・低歪み増幅用 単位: mm 2.1±0.1 高利得です。:|S21e|2=12.5dB 標準 (@ f=1GHz) 3 2 0.7±0.05 現品表示 |
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MT3S113TU | |
Contextual Info: MT3S113TU TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type MT3S113TU VHF-UHF Band Low-Noise, Low-Distortion Amplifier Applications Unit: mm 2.1±0.1 2 3 1.1. 2.2. 3.3. R7 1 1 3 2 0.7±0.05 Marking +0.1 0.3 -0.05 High Gain:|S21e| = 12.5dB typ. (@ f=1GHz) |
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MT3S113TU | |
Contextual Info: MT3S113 TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type MT3S113 VHF-UHF Band Low-Noise, Low-Distortion Amplifier Applications Unit: mm FEATURES • Low Noise Figure:NF=1.15dB typ. (@ f=1GHz) • High Gain:|S21e| =11.8dB (typ.) (@ f=1GHz) 2 |
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MT3S113 O-236 SC-59 | |
GT30F131
Abstract: GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01
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SCE0004L TTC4116* 2SC4118 TTA1586* 2SA1588 2SC4117 2SA1587 2SC5233 2SC4738 2SA1832 GT30F131 GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01 | |
TA4029CTC
Abstract: TA4032FT TB7602TU MT4S300T MT4S300U MT4S301T TA4029TU SOT-24 MT4S300 RFM12U7X
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BCJ0003G BCJ0003F TA4029CTC TA4032FT TB7602TU MT4S300T MT4S300U MT4S301T TA4029TU SOT-24 MT4S300 RFM12U7X | |
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RFM70U12D
Abstract: 2SC3136 rfm03u3ct 2SK709 RFM70U12 MT3S106 MT3S111 MT3S111P tim4450 tpm1919
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SCJ0004N 2SC2714 2SC2715 2SC2716 2SC3123 2SC5064 2SC5084 2SC5089 2SC5094 2SC5106 RFM70U12D 2SC3136 rfm03u3ct 2SK709 RFM70U12 MT3S106 MT3S111 MT3S111P tim4450 tpm1919 | |
3sk catalog
Abstract: TE85L Toshiba
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BCE0003H 3sk catalog TE85L Toshiba | |
MT4S300T
Abstract: TA4032FT MT3S111TU JAPANESE 2SC TRANSISTOR 2010 MT4S301T TA4029CTC TB7602CTC MT3S111P JAPANESE TRANSISTOR 2SC 2010 2sk3476
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BCE0003F MT4S300T TA4032FT MT3S111TU JAPANESE 2SC TRANSISTOR 2010 MT4S301T TA4029CTC TB7602CTC MT3S111P JAPANESE TRANSISTOR 2SC 2010 2sk3476 | |
MT4S300T
Abstract: TGI0910-50 MT3S111P 2SC3136 S8850AF TA4032FT MT4S300U VHF-UHF Band oscillator 2sc5108 MT4S301T
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2010/9SCE0004K 2SC1923 MT4S300T TGI0910-50 MT3S111P 2SC3136 S8850AF TA4032FT MT4S300U VHF-UHF Band oscillator 2sc5108 MT4S301T | |
GT30F124
Abstract: TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123
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2010/9SCE0004K SC-43) 2SC1815 700the GT30F124 TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123 | |
2sc5066
Abstract: MT3S111P MT3S111 toshiba transistors catalog TIM4450-4UL TGI1314-50L MT3S106 MT4S200T X-band low noise amplifiers toshiba 2SC3136
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SCE0004I 2SC380TM 2sc5066 MT3S111P MT3S111 toshiba transistors catalog TIM4450-4UL TGI1314-50L MT3S106 MT4S200T X-band low noise amplifiers toshiba 2SC3136 | |
GT45F122
Abstract: TK13A60U GT30F123 2SK4207 GT30J124 IGBT GT30F123 gt30f122 GT30G122 2SC5471 IGBT GT30J124
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SCJ0004O SC-43) 2SC1815 2SC732TM 2SC1959 2SA1015 2SC2240 2SA970 2SC1815 2SA1015 GT45F122 TK13A60U GT30F123 2SK4207 GT30J124 IGBT GT30F123 gt30f122 GT30G122 2SC5471 IGBT GT30J124 | |
GT30J124
Abstract: smd transistor h2a gt45f122 TPCP8R01 GT30F123 2sc1815 smd type smd marking 8L01 h2a smd 2SC5471 2sc5200 amplifiers circuit diagram
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SCE0004I SC-43) 2SC1815 GT30J124 smd transistor h2a gt45f122 TPCP8R01 GT30F123 2sc1815 smd type smd marking 8L01 h2a smd 2SC5471 2sc5200 amplifiers circuit diagram | |
RFM70U12D
Abstract: 2SC3136 RFM70 TGI8596-50 MT4S300T TA4029 TA4032FT TA4029TU TA4029CTC 2SK403
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SCJ0004O 2SC2714 2SC2715 2SC2716 2SC3123 2SC5064 2SC5084 2SC5089 2SC5106 2SC5109 RFM70U12D 2SC3136 RFM70 TGI8596-50 MT4S300T TA4029 TA4032FT TA4029TU TA4029CTC 2SK403 | |
*45F122
Abstract: GT30f124 *30g122 *30f124 IGBT GT30F124 GT30J124 GT45F122 GT30F123 TPCA*8023 GT50N322
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SCJ0004O SC-43) 2SC1815 2SC732TM 2SC1959 2SA1015 2SC2240 2SA970 2SC1815 2SA1015 *45F122 GT30f124 *30g122 *30f124 IGBT GT30F124 GT30J124 GT45F122 GT30F123 TPCA*8023 GT50N322 |