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Micron Technology Inc MT49H8M36BM-5:B IC DRAM 288MBIT PARALLEL 144UBGA
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Micron Technology Inc MT49H8M36BM-25:B IC DRAM 288MBIT PARALLEL 144UBGA
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Micron Technology Inc MT49H8M36BM-TI:B IC DRAM 288MBIT PARALLEL 144UBGA
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DigiKey	MT49H8M36BM-TI:B	Tray				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Micron Technology Inc MT49H8M36FM-33-TR IC DRAM 288MBIT PARALLEL 144UBGA
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DigiKey	MT49H8M36FM-33-TR	Reel				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Micron Technology Inc MT49H8M36SJ-25E:B IC DRAM 288MBIT PARALLEL 144FBGA
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DigiKey	MT49H8M36SJ-25E:B	Tray				1 - 10 - 100 - 1000 - 10000 -	Buy Now

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MT49H8M36 Datasheets (59)

Part	Manufacturer	Description	Datasheet Type	PDF
MT49H8M36	Micron	288Mb CIO Reduced Latency	Original	PDF
MT49H8M36BM-18:B	Micron Technology	Memory, Integrated Circuits (ICs), IC RLDRAM 288MBIT 1.875NS UBGA	Original	PDF
MT49H8M36BM-25	Micron	288Mb RLDRAM Component	Original	PDF
MT49H8M36BM-25:B TR	Micron Technology	Integrated Circuits (ICs) - Memory - IC DRAM 288M PARALLEL 144UBGA	Original	PDF
MT49H8M36BM-25:B	Micron Technology	Memory, Integrated Circuits (ICs), IC RLDRAM 288MBIT 2.5NS UBGA	Original	PDF
MT49H8M36BM-25:B	Micron Technology	Memory, Integrated Circuits (ICs), IC RLDRAM 288MBIT 2.5NS 144UBGA	Original	PDF
MT49H8M36BM-25E:B TR	Micron Technology	Integrated Circuits (ICs) - Memory - IC DRAM 288M PARALLEL 144UBGA	Original	PDF
MT49H8M36BM-25E:B	Micron Technology	Memory, Integrated Circuits (ICs), IC RLDRAM 288MBIT 2.5NS UBGA	Original	PDF
MT49H8M36BM-25E:B	Micron Technology	Memory, Integrated Circuits (ICs), IC RLDRAM 288MBIT 2.5NS UBGA	Original	PDF
MT49H8M36BM-25IT	Micron Technology	Memory, Integrated Circuits (ICs), IC RLDRAM 288MBIT 2.5NS UBGA	Original	PDF
MT49H8M36BM-25IT	Micron Technology	Memory, Integrated Circuits (ICs), IC RLDRAM 288MBIT 2.5NS UBGA	Original	PDF
MT49H8M36BM-25 IT:B	Micron Technology	Integrated Circuits (ICs) - Memory - IC DRAM 288M PARALLEL 144UBGA	Original	PDF
MT49H8M36BM-25 IT:B TR	Micron Technology	Integrated Circuits (ICs) - Memory - IC DRAM 288M PARALLEL 144UBGA	Original	PDF
MT49H8M36BM-33	Micron	288Mb RLDRAM Component	Original	PDF

MT49H8M36BM-33	Micron Technology	Memory, Integrated Circuits (ICs), IC RLDRAM 288MBIT 3.3NS 144UBGA	Original	PDF
MT49H8M36BM-33:B TR	Micron Technology	Integrated Circuits (ICs) - Memory - IC DRAM 288M PARALLEL 144UBGA	Original	PDF
MT49H8M36BM-33:B	Micron Technology	Memory, Integrated Circuits (ICs), IC RLDRAM 288MBIT 3.3NS UBGA	Original	PDF
MT49H8M36BM-33:B	Micron Technology	Memory, Integrated Circuits (ICs), IC RLDRAM 288MBIT 3.3NS UBGA	Original	PDF
MT49H8M36BM-33 IT	Micron	288Mb RLDRAM Component	Original	PDF
MT49H8M36BM-33IT	Micron Technology	Memory, Integrated Circuits (ICs), IC RLDRAM 288MBIT 3.3NS UBGA	Original	PDF

MT49H8M36 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
MICRON BGA PART MARKING Abstract: No abstract text available Text: 288Mb: x9, x18, x36 2.5V VEXT, 1.8V VDD, HSTL, CIO, RLDRAM 2 Features CIO RLDRAM 2 MT49H32M9 – 32 Meg x 9 x 8 Banks MT49H16M18 – 16 Meg x 18 x 8 Banks MT49H8M36 – 8 Meg x 36 x 8 Banks Features Options1 • 533 MHz DDR operation 1.067 Gb/s/pin data rate	Original	288Mb: MT49H32M9 MT49H16M18 MT49H8M36 09005aef80a41b46/Source: 09005aef809f284b MICRON BGA PART MARKING	PDF
09005aef809f284b Abstract: No abstract text available Text: 8 MEG x 36, 16 MEG x 18, 32 MEG x 9 2.5V VEXT, 1.8V VDD, HSTL, RLDRAM II 288MB CIO REDUCED LATENCY RLDRAM II MT49H8M36 MT49H16M18 MT49H32M9‡ Features Figure 1: 144-Ball FBGA • 288Mb • 400 MHz DDR operation (800 Mb/s/pin data rate) • Organization	Original	288MB 288Mb MT49H8M36 MT49H16M18 09005aef80a41b46/zip: 09005aef809f284b	PDF
MICRON BGA PART MARKING Abstract: NF 034 T6N 700 MT49H16M18 Text: 288Mb: x9, x18, x36 2.5V VEXT, 1.8V VDD, HSTL, CIO, RLDRAM II Features CIO RLDRAM II MT49H32M9 – 32 Meg x 9 x 8 Banks MT49H16M18 – 16 Meg x 18 x 8 Banks MT49H8M36 – 8 Meg x 36 x 8 Banks Features Options1 • 533 MHz DDR operation 1.067 Gb/s/pin data rate	Original	288Mb: MT49H32M9 MT49H16M18 MT49H8M36 09005aef80a41b46/Source: 09005aef809f284b MICRON BGA PART MARKING NF 034 T6N 700 MT49H16M18	PDF
MT49H16M18 Abstract: No abstract text available Text: ADVANCE‡ 8 MEG x 36, 16 MEG x 18, 32 MEG x 9 2.5V VEXT, 1.8V VDD, HSTL, RLDRAM II 288Mb CIO REDUCED LATENCY RLDRAM II MT49H8M36 MT49H16M18 MT49H32M9 FEATURES Figure 1 144-Ball FBGA • 288Mb • 400 MHz DDR operation (800 Mb/s/pin data rate) • Organization	Original	288Mb 288Mb output0006, MT49H8M36 MT49H16M18	PDF
MT49H16M18 Abstract: No abstract text available Text: 8 MEG x 36, 16 MEG x 18, 32 MEG x 9 2.5V VEXT, 1.8V VDD, HSTL, RLDRAM II 288MB CIO REDUCED LATENCY RLDRAM II MT49H8M36 MT49H16M18 MT49H32M9 Features Figure 1: 144-Ball FBGA • 288Mb • 400 MHz DDR operation (800 Mb/s/pin data rate) • Organization	Original	288MB MT49H8M36 MT49H16M18 MT49H32M9 144-Ball 288Mb 09005aef80a41b46/zip: 09005aef809f284b MT49H8M36 MT49H16M18	PDF
marking code a02 SMD Transistor Abstract: transistor SMD DK MT49H16M18 smd transistor marking d1c Diode A3X transistor smd marking BA RE marking BAX smd cod plastic BA5 marking code A22 SMD MARKING CODE Text: ADVANCE‡ 8 MEG x 36, 16 MEG x 18, 32 MEG x 9 2.5V VEXT, 1.8V VDD, HSTL, RLDRAM II 288Mb CIO REDUCED LATENCY RLDRAM II MT49H8M36 MT49H16M18 MT49H32M9 FEATURES Figure 1 144-Ball FBGA • 288Mb • 400 MHz DDR operation (800 Mb/s/pin data rate) • Organization	Original	288Mb MT49H8M36 MT49H16M18 MT49H32M9 144-Ball 288Mb MT49H8M36 marking code a02 SMD Transistor transistor SMD DK MT49H16M18 smd transistor marking d1c Diode A3X transistor smd marking BA RE marking BAX smd cod plastic BA5 marking code A22 SMD MARKING CODE	PDF
MT49H16M18 Abstract: No abstract text available Text: PRELIMINARY‡ 8 MEG x 36, 16 MEG x 18, 32 MEG x 9 2.5V VEXT, 1.8V VDD, HSTL, RLDRAM II 288Mb CIO REDUCED LATENCY RLDRAM II MT49H8M36 MT49H16M18 MT49H32M9 Features Figure 1: 144-Ball FBGA • 288Mb • 400 MHz DDR operation (800 Mb/s/pin data rate) • Organization	Original	288Mb 288Mb MT49H8M36 MT49H16M18	PDF
MARKING H1 AMP Abstract: MT49H16M18 Text: ADVANCE‡ 8 MEG x 36, 16 MEG x 18, 32 MEG x 9 2.5V VEXT, 1.8V VDD, HSTL, RLDRAM II 288Mb CIO REDUCED LATENCY RLDRAM II MT49H8M36 MT49H16M18 MT49H32M9 FEATURES Figure 1 144-Ball FBGA • 288Mb • 400 MHz DDR operation (800 Mb/s/pin data rate) • Organization	Original	288Mb 288Mb output0006, MT49H8M36 MARKING H1 AMP MT49H16M18	PDF
plastic BA7 marking code Abstract: No abstract text available Text: ADVANCE‡ 8 MEG x 36, 16 MEG x 18, 32 MEG x 9 2.5V VEXT, 1.8V VDD, HSTL, RLDRAM II 288Mb CIO REDUCED LATENCY RLDRAM II MT49H8M36 MT49H16M18 MT49H32M9 FEATURES Figure 1 144-Ball µBGA • 288Mb • 400 MHz DDR operation (800 Mb/s/pin data rate) • Organization	Original	288Mb 288Mb output0006, MT49H8M36 plastic BA7 marking code	PDF
MT49H16M18 Abstract: No abstract text available Text: PRELIMINARY‡ 8 MEG x 36, 16 MEG x 18, 32 MEG x 9 2.5V VEXT, 1.8V VDD, HSTL, RLDRAM II 288MB CIO REDUCED LATENCY RLDRAM II MT49H8M36 MT49H16M18 MT49H32M9 Features Figure 1: 144-Ball FBGA • 288Mb • 400 MHz DDR operation (800 Mb/s/pin data rate) • Organization	Original	288MB 288Mb MT49H8M36 MT49H16M18	PDF
MT49H16M18 Abstract: No abstract text available Text: PRELIMINARY‡ 8 MEG x 36, 16 MEG x 18, 32 MEG x 9 2.5V VEXT, 1.8V VDD, HSTL, RLDRAM II 288MB CIO REDUCED LATENCY RLDRAM II MT49H8M36 MT49H16M18 MT49H32M9 Features Figure 1: 144-Ball FBGA • 288Mb • 400 MHz DDR operation (800 Mb/s/pin data rate) • Organization	Original	288MB 288Mb 09005aef809f284b MT49H8M36 MT49H16M18	PDF
MICRON BGA PART MARKING Abstract: MT49H16M18 smd transistor marking HT1 A191 A201 MT49H32M9 MT49H8M36 RLDRAM mt49h Text: 288Mb: x9, x18, x36 2.5V VEXT, 1.8V VDD, HSTL, CIO, RLDRAM II Features CIO RLDRAM II MT49H32M9 – 32 Meg x 9 x 8 Banks MT49H16M18 – 16 Meg x 18 x 8 Banks MT49H8M36 – 8 Meg x 36 x 8 Banks Features Figure 1: • 400 MHz DDR operation 800 Mb/s/pin data rate	Original	288Mb: MT49H32M9 MT49H16M18 MT49H8M36 09005aef80a41b59/Source: 09005aef809f284b MICRON BGA PART MARKING MT49H16M18 smd transistor marking HT1 A191 A201 MT49H32M9 MT49H8M36 RLDRAM mt49h	PDF
09005aef809f284b Abstract: No abstract text available Text: 288Mb: x36, x18, x9 2.5V VEXT, 1.8V VDD, HSTL, RLDRAM II Features 288Mb CIO Reduced Latency RLDRAM II MT49H8M36 MT49H16M18 MT49H32M9 Features Figure 1: • 400 MHz DDR operation (800 Mb/s/pin data rate) • Organization 8 Meg x 36, 16 Meg x 18, and 32 Meg x 9	Original	288Mb: 288Mb MT49H8M36 MT49H16M18 MT49H32M9 09005aef80a41b46/Source: 09005aef809f284b	PDF
MT49H16M18 Abstract: No abstract text available Text: ADVANCE‡ 8 MEG x 36, 16 MEG x 18, 32 MEG x 9 2.5V VEXT, 1.8V VDD, HSTL, RLDRAM II 288Mb CIO REDUCED LATENCY RLDRAM II MT49H8M36 MT49H16M18 MT49H32M9 FEATURES Figure 1 144-Ball µBGA • 288Mb • 400 MHz DDR operation (800 Mb/s/pin data rate) • Organization	Original	288Mb 288Mb output0006, MT49H8M36 MT49H16M18	PDF

transistor SMD DKL Abstract: BA5 marking MARKING SMD x9 Micron DDR marking H12 smd cod A22 SMD MARKING CODE A53 SMD Marking Code marking BAX marking code a02 SMD Transistor Marking D1c Text: 288Mb: x36, x18, x9 2.5V VEXT, 1.8V VDD, HSTL, RLDRAM II Features 288Mb CIO Reduced Latency RLDRAM II MT49H8M36 MT49H16M18 MT49H32M9 For the latest data sheet, refer to Micron’s Web site: www.micron.com/rldram Features Figure 1: • 400 MHz DDR operation (800 Mb/s/pin data rate)	Original	288Mb: 288Mb MT49H8M36 MT49H16M18 MT49H32M9 09005aef80a41b46/Source: 09005aef809f284b MT49H8M36 transistor SMD DKL BA5 marking MARKING SMD x9 Micron DDR marking H12 smd cod A22 SMD MARKING CODE A53 SMD Marking Code marking BAX marking code a02 SMD Transistor Marking D1c	PDF
E33-DW1 Abstract: PD48288236FF-EF25-DW1-A MT49H16M18CFM-25 micron Text: インフォメーション 288M Low Latency DRAMと他社互換製品の互換性資料番号 M19702JJ1V0IF00（第1版）発行年月 March 2009 NS NEC Electronics Corporation 2009 〔メモ〕 2 インフォメーション M19702JJ1V0IF CMOSデバイスの一般的注意事項	Original	M19702JJ1V0IF001 M19702JJ1V0IF PD48288236 PD48288218 PD48288209 PD48288118 PD48288209, PD48288118 E33-DW1 PD48288236FF-EF25-DW1-A MT49H16M18CFM-25 micron	PDF
Xilinx spartan xc3s400_ft256 Abstract: XC3S400_FT256 XC3S400PQ208 XC3S250EPQ208 xc3s400TQ144 XC3S400FT256 xc3s1400afg676 XC3S700AFG484 XC3S500EPQ208 XC3S200FT256 Text: Memory Interface Solutions User Guide UG086 v3.3 December 2, 2009 R R Xilinx is disclosing this Document and Intellectual Property (hereinafter “the Design”) to you for use in the development of designs to operate on, or interface with Xilinx FPGAs. Except as stated herein, none of the Design may be copied, reproduced, distributed, republished,	Original	UG086 DQS10 DQS11 DQS12 DQS13 DQS14 DQS15 DQS16 DQS17 Xilinx spartan xc3s400_ft256 XC3S400_FT256 XC3S400PQ208 XC3S250EPQ208 xc3s400TQ144 XC3S400FT256 xc3s1400afg676 XC3S700AFG484 XC3S500EPQ208 XC3S200FT256	PDF
XAPP678C Abstract: XAPP678 XAPP688 MT49H8M36 MT49H8M36FM-33 XAPP688C XAPP771 synchronous fifo design in verilog RLDRAM MT49H8M36FM-33 IT Text: Application Note: Virtex-II Pro Devices R XAPP771 v1.0 June 13, 2005 Synthesizable CIO DDR RLDRAM II Controller for Virtex-II Pro FPGAs Author: Rodrigo Angel Summary This application note describes how to use a Virtex -II Pro device to interface to Common I/O	Original	XAPP771 XAPP678C, XAPP688C, XAPP688 UG141, ML367 com/userguides/ug141 XAPP678C XAPP678 MT49H8M36 MT49H8M36FM-33 XAPP688C XAPP771 synchronous fifo design in verilog RLDRAM MT49H8M36FM-33 IT	PDF
Board Design Guideline Abstract: board design guidelines RLDRAM k4h561638f EP1S60 EP2S15 EP2S30 ep2s60f1020 gx Text: Interfacing RLDRAM II with Stratix II, Stratix,& Stratix GX Devices Application Note 325 November 2005, ver. 3.1 Introduction Reduced latency DRAM II RLDRAM II is a DRAM-based point-to-point memory device designed for communications, imaging, and server	Original		PDF
dll 1117 Abstract: MT49H16M18BM-25 verilog code for ddr2 sdram to virtex 5 MT49H16M18 XAPP852 FIFO36 asynchronous fifo vhdl xilinx micron DDR2 pcb layout vhdl code for DCM VIRTEX-5 DDR2 controller Text: Application Note: Virtex-5 FPGAs RLDRAM II Memory Interface for Virtex-5 FPGAs R Authors: Benoit Payette and Rodrigo Angel XAPP852 v2.3 May 14, 2008 Summary This application note describes how to use a Virtex -5 device to interface to Common I/O (CIO) Double Data Rate (DDR) Reduced Latency DRAM (RLDRAM II) devices. The reference design	Original	XAPP852 dll 1117 MT49H16M18BM-25 verilog code for ddr2 sdram to virtex 5 MT49H16M18 XAPP852 FIFO36 asynchronous fifo vhdl xilinx micron DDR2 pcb layout vhdl code for DCM VIRTEX-5 DDR2 controller	PDF
DDQ15 Abstract: PD48288236FF-EF25-DW1-A MT49H16M18BM-25 MT49H16M18FM-25 PD48288236FF-E33-DW1-A MT49H16M18CBM-33 PD48288236 M18801E MT49H16M18FM Text: お客様各位カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジが合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社	Original	M19702JJ1V0IF001 M19702JJ1V0IF DDQ15 PD48288236FF-EF25-DW1-A MT49H16M18BM-25 MT49H16M18FM-25 PD48288236FF-E33-DW1-A MT49H16M18CBM-33 PD48288236 M18801E MT49H16M18FM	PDF
MT29F1G08aba Abstract: MT29F1G16ABA mt29f1g08 MT47H64M16 MT48LC32M16A2 MT49H32M18FM mt47h128m8 MT9V022 note Vfbga 10x19 MT48LC4M32B2 Text: Extended Operating Temperature Products Micron’s Extensive Line of Extended Operating Temperature Products Ultimate Performance Under Extreme Conditions Modern life is dependent on electronics that operate in exceptionally harsh environments. Cellular base stations and automotive electronics are just	Original	52-ball MT29F1G08aba MT29F1G16ABA mt29f1g08 MT47H64M16 MT48LC32M16A2 MT49H32M18FM mt47h128m8 MT9V022 note Vfbga 10x19 MT48LC4M32B2	PDF
TCS4000 Abstract: VIRTEX-5 DDR2 controller ML561 FIFO36 MT49H16M18 MT49H16M18BM-25 XAPP852 micron DDR2 pcb layout ISERDES spartan 6 verilog code for ddr2 sdram to virtex 5 Text: Application Note: Virtex-5 FPGAs RLDRAM II Memory Interface for Virtex-5 FPGAs R Authors: Benoit Payette and Rodrigo Angel XAPP852 v2.4 January 14, 2010 Summary This application note describes how to use a Virtex -5 device to interface to Common I/O (CIO) Double Data Rate (DDR) Reduced Latency DRAM (RLDRAM II) devices. The reference	Original	XAPP852 TCS4000 VIRTEX-5 DDR2 controller ML561 FIFO36 MT49H16M18 MT49H16M18BM-25 XAPP852 micron DDR2 pcb layout ISERDES spartan 6 verilog code for ddr2 sdram to virtex 5	PDF

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MT49H8M36 Price and Stock

Micron Technology Inc MT49H8M36BM-5:B

Micron Technology Inc MT49H8M36BM-25:B

Micron Technology Inc MT49H8M36BM-TI:B

Micron Technology Inc MT49H8M36FM-33-TR

Micron Technology Inc MT49H8M36SJ-25E:B

MT49H8M36 Datasheets (59)

MT49H8M36 Datasheets Context Search

MICRON BGA PART MARKING

09005aef809f284b

MICRON BGA PART MARKING

MT49H16M18

MT49H16M18

marking code a02 SMD Transistor

MT49H16M18

MARKING H1 AMP

plastic BA7 marking code

MT49H16M18

MT49H16M18

MICRON BGA PART MARKING

09005aef809f284b

MT49H16M18

transistor SMD DKL

E33-DW1

Xilinx spartan xc3s400_ft256

XAPP678C

Board Design Guideline

dll 1117

DDQ15

MT29F1G08aba

TCS4000