Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    MTM23123 Search Results

    SF Impression Pixel

    MTM23123 Price and Stock

    Panasonic Electronic Components MTM231230L

    MOSFET P-CH 20V 3A SMINI3-G1
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey MTM231230L Reel
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    Buy Now

    Panasonic Electronic Components MTM231232LBF

    MOSFET P-CH 20V 3A SMINI3-G1-B
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey MTM231232LBF Reel
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    Buy Now
    Newark MTM231232LBF Bulk 3,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    Buy Now
    Bristol Electronics MTM231232LBF 14,012
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    Get Quote
    Quest Components MTM231232LBF 104
    • 1 $9
    • 10 $9
    • 100 $5.55
    • 1000 $5.55
    • 10000 $5.55
    Buy Now
    Avnet Abacus MTM231232LBF 143 Weeks 3,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    Buy Now

    MTM23123 Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MTM23123 Panasonic Transistor Mosfet P-CH 20V 3A 3SMINI3-G1 Original PDF
    MTM231230L Panasonic Electronic Components Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET P-CH 20V 3A SMINI-3 Original PDF
    MTM231232LBF Panasonic FETs - Single, Discrete Semiconductor Products, MOSFET N CH Original PDF

    MTM23123 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MTM23123

    Abstract: No abstract text available
    Text: Silicon MOSFETs Small Signal MTM23123 Silicon P-channel MOSFET For digital circuits Unit: mm • Features  Low voltage drive (2.5 V, 4 V)  Realization of low on-resistance, using extremely fine process (14 mΩ/mm /mm2) 2.1±0.1 0.9+0.2 –0.1 5°


    Original
    PDF MTM23123 MTM23123

    mtm231230

    Abstract: No abstract text available
    Text: Attains the industry’s lowest on-resistance with an SMini 2120 package size. Small, Low On-Resistance MOSFET Series „ Overview The new MTM23123/MTM23110/MTM23223/MTM23224 MOSFETs contribute to reduced dimensions and weight as well as lower power consumption for cellular phones, digital still cameras,


    Original
    PDF MTM23123/MTM23110/MTM23223/MTM23224 mtm231230

    Untitled

    Abstract: No abstract text available
    Text: MTM23123 Silicon P-channel MOSFET For switching • Overview  Package MTM23123 is N-channel MOS FET for load switch circuits.  Code SMini3-G1-B  Pin Name 1: Gate 2: Source 3: Drain  Features  Low voltage drive 2.5 V, 4 V  Realization of low on-resistance, using extremely fine process


    Original
    PDF MTM23123 MTM23123

    Untitled

    Abstract: No abstract text available
    Text: Doc No. TT4-EA-10702 Revision. 2 Product Standards MOS FET MTM761230LBF MTM761230LBF Silicon P-channel MOSFET Unit : mm For Switching 2.0 0.2 MTM23123 in WSMini6 type package 0.13 6 5 4 1 2 3 • Features 1.7 2.1  Low Drain-source On-state Resistance : RDS on typ. = 36 m  (VGS = -4 V)


    Original
    PDF TT4-EA-10702 MTM761230LBF MTM23123 UL-94

    Untitled

    Abstract: No abstract text available
    Text: Doc No. TT4-EA-14177 Revision. 2 Product Standards MOS FET MTM231232LBF MTM231232LBF Silicon P-channel MOSFET Unit : mm For Switching 2.0 0.3 MTM76123 in SMini3 type package 0.15 3  Low Drain-source On-state Resistance : RDS on typ. = 40 m  (VGS = -4 V)


    Original
    PDF TT4-EA-14177 MTM231232LBF MTM76123 UL-94

    mtm231230l

    Abstract: mtm231230
    Text: Attains the industry’s lowest on-resistance with an SMini 2120 package size. Small, Low On-Resistance MOSFET Series „ Overview The new MTM23123/MTM23110/MTM23223MOSFETs contribute to reduced dimensions and weight as well as lower power consumption for cellular phones, digital still cameras, digital video


    Original
    PDF MTM23123/MTM23110/MTM23223MOSFETs MTM23223 mtm231230l mtm231230

    MTM23123

    Abstract: No abstract text available
    Text: MTM23123 Silicon P-channel MOSFET For switching • Overview  Package MTM23123 is P-channel MOS FET for load switch circuits.  Code SMini3-G1-B  Pin Name 1: Gate 2: Source 3: Drain  Features  Low voltage drive 2.5 V, 4 V  Realization of low on-resistance, using extremely fine process


    Original
    PDF MTM23123 MTM23123

    MTM23123

    Abstract: No abstract text available
    Text: Reference Spice Parameter MTM23123 Device symbol Product name: MTM23123 Product type: MOSFET 3 1 2 Parameters *$ .SUBCKT MTM23123 1 2 3 M_Q1 D 1 2 2 MINT D_D1 3 2 DBD Caution : Applicable at 25 degree celsius only. D_D2 3 1 DGD D_D3 1 X DZD D_D4 2 X DZD R_R1 D 3 0.02 TC=0.0059


    Original
    PDF MTM23123 MTM23123 700E-9 0E-11 81E-12 526E-12 1EMTM23123

    Untitled

    Abstract: No abstract text available
    Text: Silicon MOSFETs Small Signal MTM23123 Silicon P-channel MOSFET For digital circuits Unit: mm • Features  Low voltage drive (2.5 V, 4 V)  Realization of low on-resistance, using extremely fine process 2.1±0.1 0.9+0.2 –0.1 5° 1.25±0.10 0.9±0.1


    Original
    PDF MTM23123

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Silicon MOSFETs (Small Signal) MTM23123 Silicon P-channel MOSFET For digital circuits Unit: mm • Features  Low voltage drive (2.5 V, 4 V)  Realization of low on-resistance, using extremely fine process


    Original
    PDF 2002/95/EC) MTM23123

    p-channel mosfet BL

    Abstract: MTM23123
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Silicon MOSFETs (Small Signal) MTM23123 Silicon P-channel MOSFET For digital circuits Unit: mm • Features  Low voltage drive (2.5 V, 4 V)  Realization of low on-resistance, using extremely fine process


    Original
    PDF 2002/95/EC) MTM23123 p-channel mosfet BL MTM23123

    MTM231230L

    Abstract: mtm231230 MTM23223 MTM23110 MTM23123 MTM23224
    Text: Attains the industry’s lowest on-resistance with an SMini 2120 package size. Small, Low On-Resistance MOSFET Series „ Overview The new MTM23123/MTM23110/MTM23223/MTM23224 MOSFETs contribute to reduced dimensions and weight as well as lower power consumption for cellular phones, digital still cameras,


    Original
    PDF MTM23123/MTM23110/MTM23223/MTM23224 MTM231230L mtm231230 MTM23223 MTM23110 MTM23123 MTM23224

    MTM23123

    Abstract: No abstract text available
    Text: Silicon MOSFETs Small Signal MTM23123 Silicon P-channel MOSFET For digital circuits • Features  Package  Low voltage drive (2.5 V, 4 V)  Realization of low on-resistance, using extremely fine process Symbol Rating Unit Drain-source surrender voltage


    Original
    PDF MTM23123 MTM23123

    Untitled

    Abstract: No abstract text available
    Text: Doc No. TA4-EA-06224 Revision. 1 Product Standards AN32258A http://www.semicon.panasonic.co.jp/en/ INTEGRATED WIRELESS POWER SUPPLY RECEIVER, Qi WIRELESS POWER CONSORTIUM COMPLIANT FEATURES DESCRIPTION  Integrated Wireless Power Receiver Solution  WPC Ver. 1.1 Compliant


    Original
    PDF TA4-EA-06224 AN32258A 48easures

    2SC5936

    Abstract: 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928
    Text: 2009 ver.2 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and


    Original
    PDF XP06501T XP06531 XP06545 XP0A554 XP0D873 XP0D874 XP0D875 2SC5936 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928

    MN864779

    Abstract: MN88472 AN12947a MN6627553 MIP3E3SMY AN22004A mip2E2dmy MIP2F2* replacement MIP2E7DMY MIP3E50MY
    Text: 2013 Semiconductor Selection Guide How to Read This Document Structure of this document This document consists of the part number list, application block diagrams, and recommended types by classification. Types are classified according to the ECALS glossary.


    Original
    PDF A000021E MN864779 MN88472 AN12947a MN6627553 MIP3E3SMY AN22004A mip2E2dmy MIP2F2* replacement MIP2E7DMY MIP3E50MY

    220v AC voltage stabilizer schematic diagram

    Abstract: LG color tv Circuit Diagram tda 9370 1000w inverter PURE SINE WAVE schematic diagram schematic diagram atx Power supply 500w TV SHARP IC TDA 9381 PS circuit diagram wireless spy camera 9744 mini mainboard v1.2 sony 279-87 transistor E 13005-2 superpro lx
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 AD9272 Analog Front End, iMEMS Accelerometers & Gyroscopes . . . . . . 782, 2583 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-528 Acceleration and Pressure Sensors . . . . . . . . . . . . . . . . . . . . . . . . . . Page 2585


    Original
    PDF AD9272 P462-ND LNG295LFCP2U P463-ND LNG395MFTP5U 220v AC voltage stabilizer schematic diagram LG color tv Circuit Diagram tda 9370 1000w inverter PURE SINE WAVE schematic diagram schematic diagram atx Power supply 500w TV SHARP IC TDA 9381 PS circuit diagram wireless spy camera 9744 mini mainboard v1.2 sony 279-87 transistor E 13005-2 superpro lx

    Untitled

    Abstract: No abstract text available
    Text: Product Standards Tentative Ver.1.11 AN32258A http://www.semicon.panasonic.co.jp/en/ INTEGRATED WIRELESS POWER SUPPLY RECEIVER, Qi WIRELESS POWER CONSORTIUM COMPLIANT FEATURES DESCRIPTION  Integrated Wireless Power Receiver Solution  WPC Ver. 1.1 Compliant


    Original
    PDF AN32258A