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Motorola Semiconductor Products MTP15N06V
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	MTP15N06V		138			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Quest Components	MTP15N06V		71			1 $3.63 10 $2.662 100 $2.42 1000 $2.42 10000 $2.42	Buy Now
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onsemi MTP15N06VL
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Motorola Semiconductor Products MTP15N06E
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
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Quest Components	MTP15N06E		67			1 $0.98 10 $0.784 100 $0.441 1000 $0.441 10000 $0.441	Buy Now
	MTP15N06E		26			1 $3.15 10 $2.625 100 $2.31 1000 $2.31 10000 $2.31	Buy Now
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MTP15N06 Datasheets (24)

Part	Manufacturer	Description	Datasheet Type	PDF
MTP15N06	Motorola	Switchmode Datasheet	Scan	PDF
MTP15N06	Unknown	Semiconductor Master Cross Reference Guide	Scan	PDF
MTP15N06	Unknown	FET Data Book	Scan	PDF
MTP15N06	Unknown	Shortform Datasheet & Cross References Data	Short Form	PDF
MTP15N06E	Toshiba	Power MOSFETs Cross Reference Guide	Original	PDF
MTP15N06E	Motorola	Switchmode Datasheet	Scan	PDF
MTP15N06E	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF
MTP15N06E	Unknown	FET Data Book	Scan	PDF
MTP15N06E	Unknown	Shortform Datasheet & Cross References Data	Short Form	PDF
MTP15N06L	Motorola	Switchmode Datasheet	Scan	PDF
MTP15N06L	Unknown	FET Data Book	Scan	PDF
MTP15N06L	Unknown	Shortform Datasheet & Cross References Data	Short Form	PDF
MTP15N06L	STMicroelectronics	Shortform Data Book 1988	Short Form	PDF
MTP15N06LFI	STMicroelectronics	Shortform Data Book 1988	Short Form	PDF

MTP15N06V	Motorola	TMOS V Power Field Effect Transistor	Original	PDF
MTP15N06V	On Semiconductor	Power MOSFET 15 A, 60 V	Original	PDF
MTP15N06V	Toshiba	Power MOSFETs Cross Reference Guide	Original	PDF
MTP15N06V	On Semiconductor	Over 600 obsolete distributor catalogs now available on the Datasheet Archive - Transistor, TMOS V, 60V, 7.5A, Pkg Style TO220AB	Scan	PDF
MTP15N06V-D	On Semiconductor	Power MOSFET 15 Amps, 60 Volts N-Channel TO-220	Original	PDF
MTP15N06VL	Motorola	TMOS POWER FET 15 AMPERES 60 VOLTS RDS(on) = 0.085 OHM	Original	PDF

MTP15N06 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
MTP15N06VL Abstract: AN569 Text: MTP15N06VL Preferred Device Power MOSFET 15 Amps, 60 Volts, Logic Level N–Channel TO–220 This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power	Original	MTP15N06VL r14525 MTP15N06VL/D MTP15N06VL AN569	PDF
Untitled Abstract: No abstract text available Text: MTP15N06V Preferred Device Power MOSFET 15 Amps, 60 Volts N−Channel TO−220 This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power	Original	MTP15N06V O-220 MTP15N06V/D	PDF
Untitled Abstract: No abstract text available Text: MTP15N06L Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)60 V(BR)GSS (V)20 I(D) Max. (A)15 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)75 Minimum Operating Temp (øC)	Original	MTP15N06L	PDF
TMOS E-FET Abstract: AN569 MTP15N06VL Text: MOTOROLA Order this document by MTP15N06VL/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet V MTP15N06VL Designer's TMOS Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 15 AMPERES 60 VOLTS RDS on = 0.085 OHM TMOS V is a new technology designed to achieve an on–resistance area product about one–half that of standard MOSFETs. This	Original	MTP15N06VL/D MTP15N06VL MTP15N06VL/D* TMOS E-FET AN569 MTP15N06VL	PDF
Untitled Abstract: No abstract text available Text: MTP15N06 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)60 V(BR)GSS (V)20 I(D) Max. (A)15 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)40 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)75 Minimum Operating Temp (øC)-65	Original	MTP15N06	PDF
mosfet transistor 400 volts.100 amperes Abstract: No abstract text available Text: MTP15N06VL Preferred Device Power MOSFET 15 Amps, 60 Volts, Logic Level N−Channel TO−220 http://onsemi.com This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power	Original	MTP15N06VL O-220 MTP15N06VL/D/D mosfet transistor 400 volts.100 amperes	PDF
TMOS power FET Abstract: motorola an569 thermal AN569 MTP15N06V Text: MOTOROLA Order this document by MTP15N06V SEMICONDUCTOR TECHNICAL DATA Designer's  Data Sheet MTP15N06V TMOS V Power Field Effect Transistor Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 15 AMPERES 60 VOLTS RDS on = 0.12 OHM	Original	MTP15N06V MTP15N06V/D* MTP15N06V/D TMOS power FET motorola an569 thermal AN569 MTP15N06V	PDF
Untitled Abstract: No abstract text available Text: MTP15N06E Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)60 V(BR)GSS (V)20 I(D) Max. (A)15 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)75 Minimum Operating Temp (øC)	Original	MTP15N06E	PDF
MTP15N06V Abstract: AN569 Text: MTP15N06V Preferred Device Power MOSFET 15 Amps, 60 Volts N–Channel TO–220 This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power	Original	MTP15N06V r14525 MTP15N06V/D MTP15N06V AN569	PDF
MC68B21CP Abstract: xcm916x1cth16 transistor marking code 12W SOT-23 sg379 MC68B54P XC68HC805P18CDW mc68b50cp MC2830 NE555N CHN NE555N Text: SG379/D REV 7 Semiconductor Products Sector NORTH AMERICA SALES AND DISTRIBUTION PRICE LIST THIS BOOK IS IN COMPUTER SORT PRODUCT CLASSIFICATION – Please see General Information Section 1.3 EFFECTIVE DATE: JANUARY 10, 1998 General Information 1 Cross References	Original	SG379/D 1N965BRL ZEN15V 1N751AS 1N967BRL ZEN18V 1N751ASRL 1N968BRL ZEN20V MC68B21CP xcm916x1cth16 transistor marking code 12W SOT-23 sg379 MC68B54P XC68HC805P18CDW mc68b50cp MC2830 NE555N CHN NE555N	PDF
mosfet cross reference Abstract: Power MOSFET Cross Reference Guide 2SK2146 Cross Reference power MOSFET SUP60NO6-18 MOSFET TOSHIBA 2SK irf510 Motorola SUP70NO6 STP16NEO6 IRF540 substitution Text: TMOS Power MOSFET Cross Reference This Cross reference lists MOSFETs by either industry standard part number or by manufacturer's part number for which there is a Motorola nearest or similar replacement. For devices not listed, or for additional information, contact the nearest Motorola Franchised Distributor or your local	Original		PDF
sn76131 Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B Text: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157	Original	2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 sn76131 tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B	PDF
fqp60n06 Abstract: spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640 Text: MOSFETs Progress in Power Switching Cross Reference STM i c r o e l e c t r o n i c s More Intelligent Solutions FAIRCHILD / SAMSUNG FAIRCHILD / INTERSIL HITACHI ON-SEMI PHILIPS INFINEON SIEMENS TEMIC / VISHAY TOSHIBA IR IXYS ST Nearest Preferred Supplier	Original	STP7NB40 STT3PF30L STD20NE03L STP60NE03L-12 STP60NE03L-10 STP40NF03L STP80NE03L-06 STS4DPF30L fqp60n06 spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640	PDF
transistor mosfet buv18a Abstract: M143206EVK MMBF4856 lm358 IC 68hc05sc24 telephone line interface circuit bc517 MC68B54 XC68HC705P9 MPX100ap BUV18A Text: Device Index and Subject Index In Brief . . . Page Device Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.1–1 General Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.2–1 Subject Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.2–9	Original		PDF

mgb20n40cl Abstract: MGB20N40 MGB20N35CL MTD1N60E1 motorola automotive transistor coil ignition MTSF3N03HD MGW12N120 Motorola Master Selection Guide MTD20N06HD MTD20N06V Text: TMOS Power MOSFETs Products In Brief . . . Motorola continues to build a world class portfolio of TMOS Power MOSFETs with new advances in silicon and packaging technology. The following new advances have been made in the area of silicon technology. • New high voltage devices with voltages up to	Original	smalles40F MGP5N60E MGP20N60 MGW20N60D MGW30N60 MGY30N60D MGY40N60 MGY40N60D MGW12N120 MGW12N120D mgb20n40cl MGB20N40 MGB20N35CL MTD1N60E1 motorola automotive transistor coil ignition MTSF3N03HD MGW12N120 Motorola Master Selection Guide MTD20N06HD MTD20N06V	PDF
MTP15N05 Abstract: MTP15N06 TP15N05 P-15N 15N05 5N06 5N05 Text: MOTOROLA S E M IC O N D U C T O R TECHNICAL DATA M TP15N05 MTP15N06 Designer's Data Sheet P o w e r F ie ld E f f e c t T r a n s is t o r N-Channel Enhancement-Mode Silicon Gate TMOS TM O S POWER FETs 15 AMPERES These TM O S Pow er FETs are designed fo r lo w vo ltag e , high	OCR Scan	TP15N05 MTP15N06 MTP15N05, -220A MTP15N05 MTP15N06 P-15N 15N05 5N06 5N05	PDF
MTP15N05L Abstract: MTP15N06L MTP15N05LFI Text: r r MTP15N05L/FI MTP15N06L/FI j S C S -T H O M S O N ^ 7 #„ HllglS! ilLlÊÎ[SI©lfflO gi N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTORS PRELIM INARY DATA TYPE MTP15N05L MTP15N05LFI MTP15N06L MTP15N06LFI VDSS ^DS(on 50 50 60 60 0.15 Q	OCR Scan	MTP15N05L/FI MTP15N06L/FI MTP15N05L MTP15N05LFI MTP15N06L MTP15N06LFI O-220 ISOWATT220 500ms	PDF
TT220 Abstract: TP15N05L Text: SGS-THOMSON ^ 7/L MTP15N05L/FI MTP15N06L/FI RfflD [s3©[ilLl gTI[SÎ©lÎ!!lDÊi N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTORS PRELIMINARY DATA TYPE V DSS ^D S(on MTP15N05L MTP15N05LFI 50 V 50 V 0.15 fi 0.15 Q 15 A 10 A MTP15N06L MTP15N06LFI	OCR Scan	MTP15N05L/FI MTP15N06L/FI MTP15N05L MTP15N05LFI MTP15N06L MTP15N06LFI TT220 500ms TT220 TP15N05L	PDF
TP15N06V Abstract: No abstract text available Text: MOTOROLA Order this document by MTP15N06V SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M TP15N06V TMOS V Power Field Effect Transistor Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate TMOS V is a new technology designed to achieve an on-resistance area product about one-half that of standard MOSFETs. This	OCR Scan	MTP15N06V TP15N06V 21A-06 TP15N06V	PDF
Untitled Abstract: No abstract text available Text: MOTOROLA Order this document by MTP15N06VL/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M TP15N 06VL TMOS V™ Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TMOS V is a new technology designed to achieve an on-resistance area product about one-half that of standard MOSFETs. This	OCR Scan	MTP15N06VL/D TP15N 21A-06	PDF
MOTOROLA POWER TRANSISTOR Abstract: working of astable multivibrator circuit bipolar transistor tester mje13008 motorola AN1033 BASIC THERMAL MANAGEMENT OF POWER SEMICONDUCTORS Tektronix 7603 tester SCR DL111/D AN569 Text: by'ANI 083/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA AN1083 Basic Thermal Management of Power Semiconductors BY AL PSHAENICH MOTOROLA SEMICONDUCTOR PRODUCTS SECTOR Thermal management of power semiconductors is often overlooked by design engineers, either through oversight,	OCR Scan	AN1083/D AN1083/D MOTOROLA POWER TRANSISTOR working of astable multivibrator circuit bipolar transistor tester mje13008 motorola AN1033 BASIC THERMAL MANAGEMENT OF POWER SEMICONDUCTORS Tektronix 7603 tester SCR DL111/D AN569	PDF
P50N05 Abstract: p50n06 TP3055EL tp50n05e MTP36N06E Text: N-Channel v«n n f S >« M ix ' Pd IW IM I MIX) so BUZ11 40 2 -4 30 /O 50 BUZ11A 55 2 -4 26 75 100 BUZ20 200 2 -4 1 3 .5 70 100 BUZ21 85 2 -4 21 75 50 BUZ71 100 2 -4 14 40 50 BUZ71A 120 2 -4 13 40 100 IR F 5 1 0 540 2 -4 5.6 43 100 IR F 5 2 0 270 2 -4 9.2	OCR Scan	BUZ11 BUZ11A BUZ20 BUZ21 BUZ71 BUZ71A TP50N06E MTP50M P50N05 P50N06 P50N05 p50n06 TP3055EL tp50n05e MTP36N06E	PDF
MTP15N06E Abstract: MTP12N10 XS630B1PAM12 MTP20N10 MTP15N06L MTP20N08 MTP20P06 MTP12N05 MTP12N05E MTP12N06 Text: - f §y £ fr tt € ? Wl ± £ Vd s or Vg s fê Ta=25‘ C Ig s s Pd Id * /CH Vd g W. Vd s (V) (V) (V) (W) (A) (nA) (V) ( M A) MTP12NQ5 MOT N 50 ± 2 0 12 75 MTP12N05E MOT N 50 12 40 MTP12N06 MOT N 60 ± 2 0 12 75 MTP12N08 MOT N 80 ± 2 0 12 75 M T P 12N08L	OCR Scan	MTP12N05 O-220AB MTP12N05E T0-220AB MTP12N06 MTP12N08 MTP20N08 MTP15N06E MTP12N10 XS630B1PAM12 MTP20N10 MTP15N06L MTP20P06	PDF
triac zd 607 Abstract: 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845 Text: MASTER SELECTION GUIDE EUROPEAN SUPPLEMENT This is the European supplement to the USA edition of the Master Selection Guide, SG73/D REV 3. It should be read along with the USA edition. The supplement carries amendments to sections 1 and 5 in the USA edition.	OCR Scan	SG73/D triac zd 607 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845	PDF

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Motorola Semiconductor Products MTP15N06V

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MTP15N06 Datasheets (24)

MTP15N06 Datasheets Context Search

MTP15N06VL

Untitled

Untitled

TMOS E-FET

Untitled

mosfet transistor 400 volts.100 amperes

TMOS power FET

Untitled

MTP15N06V

MC68B21CP

mosfet cross reference

sn76131

fqp60n06

transistor mosfet buv18a

mgb20n40cl

MTP15N05

MTP15N05L

TT220

TP15N06V

Untitled

MOTOROLA POWER TRANSISTOR

P50N05

MTP15N06E

triac zd 607