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    MTP2N50E Search Results

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    MTP2N50E Price and Stock

    Motorola Semiconductor Products MTP2N50E

    MOSFET Transistor, N-Channel, TO-220AB
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components MTP2N50E 6,148
    • 1 $14.8338
    • 10 $14.8338
    • 100 $14.8338
    • 1000 $7.4169
    • 10000 $7.4169
    		Buy Now

    New Jersey Semiconductor Products Inc MTP2N50E

    MOSFET Transistor, N-Channel, TO-220AB
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components MTP2N50E 40
    • 1 $13.3504
    • 10 $11.867
    • 100 $10.977
    • 1000 $10.977
    • 10000 $10.977
    		Buy Now

    MTP2N50E Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MTP2N50E Motorola TMOS POWER FET 2.0 AMPERES 500 VOLTS RDS(on) = 3.6 OHM Original PDF
    MTP2N50E Toshiba Power MOSFETs Cross Reference Guide Original PDF
    MTP2N50E On Semiconductor Over 600 obsolete distributor catalogs now available on the Datasheet Archive - Transistor, N Channel, 500V, 1A, Pkg Style TO220AB Scan PDF
    MTP2N50E/D On Semiconductor TMOS POWER FET 2.0 AMPERES 500 VOLTS Original PDF

    MTP2N50E Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MTP-2N50E

    Abstract: mtp2n50e
    Text: MOTOROLA Order this document by MTP2N50E/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet TMOS E-FET. Power Field Effect Transistor MTP2N50E Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 2.0 AMPERES 500 VOLTS RDS on = 3.6 OHM


    Original     		PDF MTP2N50E/D MTP2N50E/D* MTP-2N50E mtp2n50e

    AN569

    Abstract: MTP2N50E
    Text: MOTOROLA Order this document by MTP2N50E/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet TMOS E-FET. Power Field Effect Transistor Designer's MTP2N50E Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 2.0 AMPERES 500 VOLTS


    Original     		PDF MTP2N50E/D MTP2N50E MTP2N50E/D* AN569 MTP2N50E

    "Power Diode" 500V 20A

    Abstract: MTP2N50E MTP-2N50E
    Text: PRODUCT SPECIFICATIONS SEMICONDUCTOR TECHNOLOGY, INC. 3131 S. E. JAY STREET, STUART, FL 34997 PH: 561 283-4500 FAX: (561) 286-8914 Website: http://www.semi-tech-inc.com TYPE: MTP2N50E CASE OUTLINE: TO-220 HIGH VOLTAGE POWER MOSFET N-CHANNEL ABSOLUTE MAXIMUM RATING:


    Original     		PDF MTP2N50E O-220 "Power Diode" 500V 20A MTP2N50E MTP-2N50E

    MC68B21CP

    Abstract: xcm916x1cth16 transistor marking code 12W SOT-23 sg379 MC68B54P XC68HC805P18CDW mc68b50cp MC2830 NE555N CHN NE555N
    Text: SG379/D REV 7 Semiconductor Products Sector NORTH AMERICA SALES AND DISTRIBUTION PRICE LIST THIS BOOK IS IN COMPUTER SORT PRODUCT CLASSIFICATION – Please see General Information Section 1.3 EFFECTIVE DATE: JANUARY 10, 1998 General Information 1 Cross References


    Original     		PDF SG379/D 1N965BRL ZEN15V 1N751AS 1N967BRL ZEN18V 1N751ASRL 1N968BRL ZEN20V MC68B21CP xcm916x1cth16 transistor marking code 12W SOT-23 sg379 MC68B54P XC68HC805P18CDW mc68b50cp MC2830 NE555N CHN NE555N

    fqp60n06

    Abstract: spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640
    Text: MOSFETs Progress in Power Switching Cross Reference STM i c r o e l e c t r o n i c s More Intelligent Solutions FAIRCHILD / SAMSUNG FAIRCHILD / INTERSIL HITACHI ON-SEMI PHILIPS INFINEON SIEMENS TEMIC / VISHAY TOSHIBA IR IXYS ST Nearest Preferred Supplier


    Original     		PDF STP7NB40 STT3PF30L STD20NE03L STP60NE03L-12 STP60NE03L-10 STP40NF03L STP80NE03L-06 STS4DPF30L fqp60n06 spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640

    transistor mosfet buv18a

    Abstract: M143206EVK MMBF4856 lm358 IC 68hc05sc24 telephone line interface circuit bc517 MC68B54 XC68HC705P9 MPX100ap BUV18A
    Text: Device Index and Subject Index In Brief . . . Page Device Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.1–1 General Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.2–1 Subject Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.2–9


    Original     		PDF

    mgb20n40cl

    Abstract: MGB20N40 MGB20N35CL MTD1N60E1 motorola automotive transistor coil ignition MTSF3N03HD MGW12N120 Motorola Master Selection Guide MTD20N06HD MTD20N06V
    Text: TMOS Power MOSFETs Products In Brief . . . Motorola continues to build a world class portfolio of TMOS Power MOSFETs with new advances in silicon and packaging technology. The following new advances have been made in the area of silicon technology. • New high voltage devices with voltages up to


    Original     		PDF smalles40F MGP5N60E MGP20N60 MGW20N60D MGW30N60 MGY30N60D MGY40N60 MGY40N60D MGW12N120 MGW12N120D mgb20n40cl MGB20N40 MGB20N35CL MTD1N60E1 motorola automotive transistor coil ignition MTSF3N03HD MGW12N120 Motorola Master Selection Guide MTD20N06HD MTD20N06V

    schematic diagram inverter 5000w

    Abstract: power amplifier 5000W with PCB schematic diagram inverter 5000w USING MOSFET 5000w power amplifier circuit diagram 5000w audio amplifier circuit diagram 12v 5000W AUDIO AMPLIFIER CIRCUIT DIAGRAM 5000w two transistor forward converter 5 channels 5000w audio amplifier circuit diagram 5000w mosfet power amplifier circuit diagram Sony Semiconductor Replacement Handbook 1991
    Text: LINEAR TECHNOLOGY SEPTEMBER 1999 IN THIS ISSUE… Four New Amplifiers Serve Many Applications . 1 Issue Highlights . 2 LTC in the News… . 2 DESIGN FEATURES JFET Op Amps Equal Low Noise


    Original     		PDF 100MHz, 300MHz S-191 1-800-4-LINEAR schematic diagram inverter 5000w power amplifier 5000W with PCB schematic diagram inverter 5000w USING MOSFET 5000w power amplifier circuit diagram 5000w audio amplifier circuit diagram 12v 5000W AUDIO AMPLIFIER CIRCUIT DIAGRAM 5000w two transistor forward converter 5 channels 5000w audio amplifier circuit diagram 5000w mosfet power amplifier circuit diagram Sony Semiconductor Replacement Handbook 1991

    NTP3055AV

    Abstract: NTP3055 irf630 irf640 MTP5P25 IRF540 MTB1306 MTB3N100ET4 MTB3N60ET4 0708B MTP6N60E equivalent
    Text: PRODUCT / PROCESS CHANGE NOTIFICATION UPDATE Generic Copy 08-DEC-2000 SUBJECT: Update Notification #10395 TITLE: Modification To PCN #10344 EFFECTIVE DATE: 17-Mar-2001 AFFECTED CHANGE CATEGORY S : Subcontractor Assembly Site Subcontractor Test Site Assembly Process


    Original     		PDF 08-DEC-2000 17-Mar-2001 S21431 RYFV70 MTB8N50E MTB8N50ET4 MTP10N10E MTP10N10EL MTP10N40E MTP12N10E NTP3055AV NTP3055 irf630 irf640 MTP5P25 IRF540 MTB1306 MTB3N100ET4 MTB3N60ET4 0708B MTP6N60E equivalent

    N-Channel JFET FETs

    Abstract: ft960 Field Effect Transistors C847 P-Channel Depletion Mosfets P-Channel Depletion Mode FET p-channel jfet rf JFET with Yos MTP75N06HD BS17
    Text: ON Semiconductor Field Effect Transistors and Power TMOS MOSFETs ¨ Field Effect Transistors Field Effect Transistors JFETs TMOS MOSFETs JFETs operate in the depletion mode. They are available in both P- and N-channel and are offered in both Through-hole and Surface Mount Packages. Applications include generalpurpose amplified, switches and choppers, and RF amplifiers and mixers. These devices are


    Original     		PDF O-226AA O-220AB MTP6P20E MTP12P10 OT-223) MTP50P03HDL MMFT960T1 FT960 N-Channel JFET FETs Field Effect Transistors C847 P-Channel Depletion Mosfets P-Channel Depletion Mode FET p-channel jfet rf JFET with Yos MTP75N06HD BS17

    std2n52

    Abstract: stp2na60 buz102 equivalent SSH6N80 rfp60n06 replacement for IRL2203N BUZ91 equivalent RFP60N06LE IRFP460 cross reference buz91a equivalent
    Text: POWER MOSFETS CROSS REFERENCE Industry standard 2SK1119 2SK1120 2SK1151 2SK1152 2SK1153 2SK1154 2SK1155 2SK1156 2SK1157 2SK1158 2SK1159 2SK1160 2SK1161 2SK1164 2SK1166 2SK1167 2SK1168 2SK1169 2SK1170 2SK1199 2SK1202 2SK1203 2SK1204 2SK1205 2SK1231 2SK1232


    Original     		PDF 2SK1119 2SK1120 2SK1151 2SK1152 2SK1153 2SK1154 2SK1155 2SK1156 2SK1157 2SK1158 std2n52 stp2na60 buz102 equivalent SSH6N80 rfp60n06 replacement for IRL2203N BUZ91 equivalent RFP60N06LE IRFP460 cross reference buz91a equivalent

    IRF540 complementary

    Abstract: IRFZ44N complementary std2n52 TOSHIBA IRFZ44A datasheet STP2NA60 SSH6N80 rfp60n06 ste38na50 IRF630 complementary IRF3205 IR
    Text: Sales type RFP6N50 RFD16N03LSM RFP15N05L RFP50N05 RFP15N05 RFP50N05L RFD14N05L RFD14N05LSM RFD14N05SM RFP14N05L RFP25N05 RFP14N05 HUF75344P3 HUF75344S3S HUF75345S3S HUF75345G3 HUF75343S3S HUF75307D3S HUF75344G3 HUF75345P3 HUF75343P3 HUF5343G3 HUF75321P3 HUF75329P3


    Original     		PDF RFP6N50 RFD16N03LSM RFP15N05L RFP50N05 RFP15N05 RFP50N05L RFD14N05L RFD14N05LSM RFD14N05SM RFP14N05L IRF540 complementary IRFZ44N complementary std2n52 TOSHIBA IRFZ44A datasheet STP2NA60 SSH6N80 rfp60n06 ste38na50 IRF630 complementary IRF3205 IR

    NTE199

    Abstract: NTE2324 NTE262 NTE109 NTE3098 nte222 NTE290A nte184 NTE192A NTE309K
    Text: Semiconductor Directory Mfr.Õs Type 13 Price Mfr.Õs Code Page Mfr.Õs Type Price Mfr.Õs Code Page Mfr.Õs Type Price Mfr.Õs Code Page Mfr.Õs Type Price Mfr.Õs Code Page MPX2010GS MPX2050DP MPX2050GP MPX2100A MPX2100AP 15.08 17.27 17.69 17.74 14.57 MOT


    Original     		PDF MPX2010GS MTP75N06HD NTE102A NTE2312 MPX2050DP MTP8N50E NTE103 NTE2315 MPX2050GP MTW10N100E NTE199 NTE2324 NTE262 NTE109 NTE3098 nte222 NTE290A nte184 NTE192A NTE309K

    half bridge self oscillating transformer

    Abstract: SELF OSCILLATING HALF BRIDGE DRIVER IC resonant self oscillation half bridge ballast such BALLAST MOTOROLA IR2155 electronic ballast electronic ballast kW power IR2151 400 w self oscillating ballast resonant half bridge ballast schematic ir2155
    Text: MOTOROLA Order this document by AN1546/D SEMICONDUCTOR APPLICATION NOTE AN1546 High Voltage, High Side Driver for Electronic Lamp Ballast Applications Prepared by: Larry Baxter Power Products Division INTRODUCTION As electronic ballasts continue to displace their old core and


    Original     		PDF AN1546/D AN1546 MPIC2151 AN1546/D* half bridge self oscillating transformer SELF OSCILLATING HALF BRIDGE DRIVER IC resonant self oscillation half bridge ballast such BALLAST MOTOROLA IR2155 electronic ballast electronic ballast kW power IR2151 400 w self oscillating ballast resonant half bridge ballast schematic ir2155

    mgb20n40cl

    Abstract: 340G TO-220AB footprint Motorola Master Selection Guide MGP20N60 MMSF4P01HDR1 MTD20N06HD MTD20N06HDL MTD20P06HDL MTP75N06HD
    Text: TMOS Power MOSFETs Products In Brief . . . Motorola continues to build a world class portfolio of TMOS Power MOSFETs with new advances in silicon and packaging technology. The following new advances have been made in the area of silicon technology. • New high voltage devices with voltages up to


    Original     		PDF smalles40F MGP5N60E MGP20N60 MGW20N60D MGW30N60 MGY30N60D MGY40N60 MGY40N60D MGW12N120 MGW12N120D mgb20n40cl 340G TO-220AB footprint Motorola Master Selection Guide MGP20N60 MMSF4P01HDR1 MTD20N06HD MTD20N06HDL MTD20P06HDL MTP75N06HD

    UC3843 spice model

    Abstract: project on water level control using ic 7400 mosfet cross reference mhw612 mc146805g MC88110 MC68020 Minimum System Configuration smart UPS APC CIRCUIT diagram ASSIST09 mhw613
    Text: BR101/D REV 28 Technical and Applications Literature Selector Guide and Cross References Effective Date 1st Half 1998 Semiconductor Products Sector Technical and Applications Literature Selector Guide and Cross References ALExIS, Buffalo, Bullet-Proof, BurstRAM, CDA, CMTL, Ceff-PGA, Customer Defined Array, DECAL, Designerís, DIMMIC,


    Original     		PDF BR101/D ECL300, UC3843 spice model project on water level control using ic 7400 mosfet cross reference mhw612 mc146805g MC88110 MC68020 Minimum System Configuration smart UPS APC CIRCUIT diagram ASSIST09 mhw613

    SSH6N80

    Abstract: rfp60n06 IRF3205 IR BUK417-500AE SFP70N03 BUZ91A 2SK2717 STMicroelectronics BUZ22 IXFH13N50
    Text: Sales type BUZ10 BUZ11 BUZ11A BUZ71 BUZ71A BUZ72A BUZ80A IRF520 IRF530 IRF540 IRF620 IRF630 IRF640 IRF730 IRF740 IRF820 IRF830 IRF840 IRFBC30 IRFBC40 IRFZ40 MTP3055E STB10NA40 STB10NB20 STB10NB50 STB11NB40 STB15N25 STB16NB25 STB18N20 STB19NB20 STB30N10 STB36NE03L


    Original     		PDF BUZ10 BUZ11 BUZ11A BUZ71 BUZ71A BUZ72A BUZ80A IRF520 IRF530 IRF540 SSH6N80 rfp60n06 IRF3205 IR BUK417-500AE SFP70N03 BUZ91A 2SK2717 STMicroelectronics BUZ22 IXFH13N50

    Untitled

    Abstract: No abstract text available
    Text: LT1684 Micropower Ring Tone Generator FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ U ■ DESCRIPTIO Allows Dynamic Control of Output Frequency, Cadence, Amplitude and DC Offset Active Tracking Supply Configuration Allows Linear Generation of Ring Tone Signal


    Original     		PDF LT1684 14-Pin LTC1177-5/LTC1177-12 2500VRMS LT1270 LT1271 LT1339 LT1676 100kHz, 500mA

    5000w power amplifier circuit diagram

    Abstract: power amplifier 5000W with schematic 5000w mosfet power amplifier circuit diagram 5000w audio amplifier circuit diagram on line ups circuit schematic diagram 5000w mosfet audio amplifier circuit diagram 5000w amplifier circuits 2nd order Butterworth MFB lowpass filter with a cutoff frequency of ccfl driver schematic diagram UPS 5000w
    Text: DESIGN FEATURES Versatile Ring Tone Generator Finds Uses in Motor Drivers and Amplifiers by Dale Eagar Overview The LT1684 was specifically designed for OEM telephone equipment. Its function is to interface between the digital control logic and the high voltage analog phone line. When used in


    Original     		PDF LT1684 RS485 5000w power amplifier circuit diagram power amplifier 5000W with schematic 5000w mosfet power amplifier circuit diagram 5000w audio amplifier circuit diagram on line ups circuit schematic diagram 5000w mosfet audio amplifier circuit diagram 5000w amplifier circuits 2nd order Butterworth MFB lowpass filter with a cutoff frequency of ccfl driver schematic diagram UPS 5000w

    SSH6N80

    Abstract: ptc6063 equivalent MTW15N25E SPA08N80C3 NTE2393 NTE99 SE7055 MTP4N90 SK3024 se5020
    Text: STI Type: MTM8N55 Notes: Breakdown Voltage: 550 Continuous Current: 8 RDS on Ohm: .50 Trans Conductance Mhos: 2.0 Trans Conductance A: 4.5 Gate Threshold min: Gate Threshold max: Resistance Switching ton: 70 Resistance Switching toff: 430 Resistance Switching ID: 4.0


    Original     		PDF MTM8N55 O-204AA/TO-3 MTM8N60 MTM8N40 O-262/I-2 SSI2N60B SSI4N60B SSH6N80 ptc6063 equivalent MTW15N25E SPA08N80C3 NTE2393 NTE99 SE7055 MTP4N90 SK3024 se5020

    2n50e

    Abstract: IRF610 complementary diode d1n4148 lt1166 14239-X3 IRF9610 LT1684 MOSFET IRF230 Ring Tone Generator LT1082
    Text: LT1684 Micropower Ring Tone Generator U FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTIO Allows Dynamic Control of Output Frequency, Cadence, Amplitude and DC Offset Active Tracking Supply Configuration Allows Linear Generation of Ring Tone Signal


    Original     		PDF LT1684 14-Pin LTC1177-5/LTC1177-12 2500VRMS LT1270 LT1271 LT1339 LT1676 100kHz, 500mA 2n50e IRF610 complementary diode d1n4148 lt1166 14239-X3 IRF9610 LT1684 MOSFET IRF230 Ring Tone Generator LT1082

    SPICE model for UC3844

    Abstract: UC3843 spice model tl494 spice model EB407 Basic Halogen Converter MTP2N10 180V - 240V igbt dimmer UC3845 pspice model mosfet cross reference spice model moc3061 uc3843 flyback supply opto-coupler
    Text: BR1522/D Rev. 2, Aug-2000 Technical Literature Selector Guide and Cross Reference ON Semiconductor A Listing and Cross Reference of Available Technical Literature from ON Semiconductor ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC SCILLC . SCILLC reserves the right to make changes without further


    Original     		PDF BR1522/D Aug-2000 r14525 BR1522/D SPICE model for UC3844 UC3843 spice model tl494 spice model EB407 Basic Halogen Converter MTP2N10 180V - 240V igbt dimmer UC3845 pspice model mosfet cross reference spice model moc3061 uc3843 flyback supply opto-coupler

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MTP2N50E/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet TMOS E-FET™ Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without


    OCR Scan     		PDF MTP2N50E/D 21A-06

    2n50e

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA D e s ig n e r's Data Sheet M T P 2N 50E TM O S E-FET™ P o w er Field E ffe c t Transistor M o to ro la P re fe rre d D e v ic e N-Channel Enhancement-Mode Silicon Gate T M O S P O W E R FE T 2 .0 A M P E R E S T h is h ig h v o lta g e M O S F E T u s e s an a d v a n c e d te rm in a tio n


    OCR Scan     		PDF MTP2N50E 2n50e