MV2112

Contextual Info: K n o x S e m ic o n d u c t o r , I n c . GENERAL PURPOSE ABRUPT VARACTOR DIODES MV2101 - MV2115 MV2201 - MV2215 TYPE NUMBER MV2101 MV2102 MV2103 MV2104 MV2105 MV2106 MV2107 MV2108 MV2109 MV2110 MV2111 MV2112 MV2113 MV2114 MV2115 MV2201 MV2203 MV2205 MV2207

MV2105

Abstract: MMBV2108LT1G
Contextual Info: MMBV2101LT1 Series, MV2105, MV2101, MV2109, LV2209 Preferred Device Silicon Tuning Diodes These devices are designed in popular plastic packages for the high volume requirements of FM Radio and TV tuning and AFC, general frequency control and tuning applications. They provide solid−state

Contextual Info: GaAs Varactor Diodes Abrupt Junction TM MV20001 – MV21010 Features High Q Values for Higher Frequency Performance Constant Gamma Design Low Reverse Current Available as Chip or Packaged Diodes Available in Chip-on-Board Packaging Custom Designs Available

MV21005

Abstract: gaas varactor diodes Tuning Varactors MV20000
Contextual Info: GaAs Varactor Diodes Abrupt Junction TM MV20001 – MV21010 Features ● High Q Values for Higher Frequency Performance ● Constant Gamma Design ● Low Reverse Current ● Available as Chip or Packaged Diodes ● Available in Chip-on-Board Packaging ●

LV2205

Abstract: LV2209 MMBV2101LT1 MMBV2103LT1 MMBV2105LT1 MMBV2107LT1 MV2101 MV2105 MV2109 MERIT INCH
Contextual Info: MMBV2101LT1 Series, MV2105, MV2101, MV2109, LV2205, LV2209 Silicon Tuning Diodes 6.8–100 pF, 30 Volts Voltage Variable Capacitance Diodes http://onsemi.com These devices are designed in popular plastic packages for the high volume requirements of FM Radio and TV tuning and AFC, general

MMBV2104

Abstract: TO-236-AA TO-236AA mv2110 diode MV2213 MV2102 MMBV2102 MV2201 MV2110 MV2205
Contextual Info: 6367255 MOTOROLA S C <OI ODES/ OPTO> 89D 7 7 4 5 2 General Purpose Abrupt Junction Tuning Diodes continued 30 Volts ' CASE 318-02 (TO-236AA) Style 8 t . h, 6.8 * - , i - Device Type 450 MV2101 2.5 450 \ • 10 f - • 12 2.5 400 MV2103 2.5 400

Contextual Info: Tuning and Switching Diodes Tuning Diodes − Abrupt Junction CT @ VR = 4.0 V, 1.0 MHz VR Volts Device pF Min pF Nominal pF Max Cap Ratio Min Q@4 4.0 0V 50 MHz Typ MV2101 30 6.1 6.8 7.5 2.5 450 MV2105 30 13.5 15 16.5 2.5 400 MV2109 30 29.7 33 36.3 2.5 200

mv2105

Abstract: marking code 4h diode
Contextual Info: MMBV2101LT1 Series, MV2105, MV2101, MV2109, LV2205, LV2209 Silicon Tuning Diodes 6.8–100 pF, 30 Volts Voltage Variable Capacitance Diodes http://onsemi.com These devices are designed in popular plastic packages for the high volume requirements of FM Radio and TV tuning and AFC, general

V2205

Abstract: MV2201 MV2213 MV2215 V2103 V2105
Contextual Info: K n o x S e m ic o n d u c t o r , in c . GENERAL PURPOSE ABRUPT VARACTOR DIODES MV2101 -M V 2115 MV2201 - MV2215 TYPE NU M BER CAPACITANCE @ - 4 Vdc 1 M H z pF MIN Q U A LITY FACTOR Q @ - 4 Vdc f = 50 M Hz CA PA C ITA N C E RATIO C-2V / C-30V MIN MV2101

SOT23 MARKING code 4W

Abstract: MV2109 MMBV2105L 65t marking diode mv2105 sot-23 297 marking marking 297 sot-23 marking code 4h diode SOT23 65T MMBV2109LT1 equivalent
Contextual Info: MMBV2101LT1 Series, MV2105, MV2101, MV2109, LV2209 Preferred Device Silicon Tuning Diodes These devices are designed in popular plastic packages for the high volume requirements of FM Radio and TV tuning and AFC, general frequency control and tuning applications. They provide solid−state

MV2107

Abstract: BV2108 MV2113 BV-2108
Contextual Info: MOTOROLA SEMICONDUCTOR MMBV2101L thru MMBV2109L MV2101 thru MV2115 TECHNICAL DATA W V O L T A G E -V A R IA B L E C A PA C ITA N C E D IO D ES C 6.8-100 pF 30 VOLTS SILIC O N EPIC A P D IO D ES % C A S E 318-07 TO-236AB SOT-23 MMBV2101L thru MMBV2109L C A SE 182-02

gaas varactor diodes

Abstract: MV2101 MV21004 MV20001
Contextual Info: GaAs Varactor Diodes Abrupt Junction TM MV20001 – MV21010 Features ● High Q Values for Higher Frequency Performance ● Constant Gamma Design ● Low Reverse Current ● Available as Chip or Packaged Diodes ● Available in Chip-on-Board Packaging ●

MV2110

Abstract: MV2109 positive lead dioda bridge MV2112 DIODE CQ MV2101 MV2102 MV2103 MV2107 mv2110 diode
Contextual Info: MV2101 SILICON thru MV2115 v v c - W IV O LTA G E -V A R IA B LE CAPACITANCE DIODES 6 .8 -1 0 0 p F 30 V O L T S SILICON EPICAP DIODES . . . designed in the popular P L A S T IC P A C K A G E for high volume requirements of FM Radio and T V tuning and A F C , general frequency

mv2109 varactor

Abstract: MV2107 MV2104 MV2112 MV2113 MV2201 MV2110 Knox Semiconductor mv2110 MV2102 MV2105
Contextual Info: K n o x S e m ic o n d u c t o r , I n c . GENERAL PURPOSE ABRUPT VARACTOR DIODES MV2101 - MV2115 MV2201 - MV2215 TYPE NUMBER CAPACITANCE @ - 4 Vdc 1 MHz pF MIN QUALITY FACTOR Q @ - 4 Vdc f = 50 MHz CAPACITANCE RATIO C-2V / C*30V MIN CAPACITANCE RATIO C -1V /C -10V

MV2201

Abstract: V2103 V2209
Contextual Info: K n o x S e m ic o n d u c t o r , I n c GENERAL PURPOSE ABRUPT VARACTOR DIODES MV2101 - MV2115 MV2201 - MV22I5 TYPE N U M BER CA PACITANCE @ - 4 Vdc 1 M H z pF M IN QUALITY FACTOR Q @ - 4 Vdc f = 50 M H z CA PA C ITA N C E RATIO C*2V / C-30V MIN MV2101

MC68B21CP

Abstract: xcm916x1cth16 transistor marking code 12W SOT-23 sg379 MC68B54P XC68HC805P18CDW mc68b50cp MC2830 NE555N CHN NE555N
Contextual Info: SG379/D REV 7 Semiconductor Products Sector NORTH AMERICA SALES AND DISTRIBUTION PRICE LIST THIS BOOK IS IN COMPUTER SORT PRODUCT CLASSIFICATION – Please see General Information Section 1.3 EFFECTIVE DATE: JANUARY 10, 1998 General Information 1 Cross References

v2308

Abstract: EP1014 V2205
Contextual Info: TABLE OF CONTENTS GLASS PACKAGED HERMETICALLY SEALED Suffix Letter Indicates Capacitance Tolerance SLIGHT HYPERABRUPT AB R U PT Page No. 1 N 9 5 1 - 1 N 9 5 6 . 1N4786 -1 N 4 8 1 5 A , B .

IN5717

Abstract: IN5718 IN5714 7C3 diode IN5421
Contextual Info: VARACTOR SELECTOR GUIDE Series Capacitance 1-IOOpf >100pf Max Working Voltage Q 7-50 50-150 >150 10-50 50-100 >100 Leakage Current low Cost Comments <10nA <1.0M* Replaces M V830-M V840 DO-7 G lass CV830CV840 X CV1006-16CV1106-16 X X CV1620CV1650 X X X X X

MV2215

Abstract: MV2112 MV2201 mv838 MV2213 mv2114 1N5441A 1N5443A 1N5444A MV1620
Contextual Info: RF — SIGNAL PROCESSING DIODES continued General-Purpose Tuning Diodes (continued) MAXIMUM WORKING VOLTAGE s ^ ' 30 V O U S CASE 51 DO-204AA (DO-7) Ct Nominal Capacitance PF ±10% («' V r = 4.0 V f = 1.0 MHz - .Cap.''"'' Ratio 4 -2 5 V Mtn Cap . . Ratso

teledyne crystalonics

Abstract: VA-212 MC-150 1N4786
Contextual Info: VARACTOR SELECTOR GUIDE Series Capacitance 1-IOOpf >100pf Max Working Voltage Q 7-50 50-150 >150 10-50 50-100 >100 Leakage Current low Cost Comments <10nA <1.0M* Replaces MV830-MV840 DO-7 G lass CV830CV840 X CV1006-16CV1106-16 X X CV1620CV1650 X X X X X Replaces MV1620-MV1650

CV1664

Abstract: DO-14 diode VA51 VA521
Contextual Info: VARACTOR SELECTO R GUIDE Series Capacitance 1-IOOpf >100pf Max Working Voltage Q 7-50 50-150 >150 10-50 50-100 >100 Leakage Current low Cost Comments <10nA <1.0M* Replaces M V830-M V840 DO-7 G lass CV830CV840 X CV1006-16CV1106-16 X X CV1620CV1650 X X X X X

FV1106-FV1116

Abstract: c60 c4
Contextual Info: VARACTOR SELECTOR GUIDE Series Capacitance 1-IOOpf >100pf Max Working Voltage Q 7-50 50-150 >150 10-50 50-100 >100 Leakage Current low Cost Comments <10nA <1.0M* Replaces MV830-MV840 DO-7 Glass CV830CV840 X CV1006-16CV1106-16 X X CV1620CV1650 X X X X X Replaces MV1620-MV1650

MV109

Abstract: BB105 MV2104 MV104G MV1662 MV1662-2 BB105A MV1404 MV2102 MV2114
Contextual Info: FM Radio Abrupt and TV Hyper-Abrupt Tuning . . . designed fo r use in V H F and U H F tuners and FM radio, providing solid-state reliability in replacement o f mechanical tuning methods. A /" Device Type BB105B BB105G BB105A MV104 MV104G MV109 MV209 MV1401

1N5718

Contextual Info: VARACTOR SELECTO R GUIDE Series Capacitance 1-IOOpf > 100pf Max Working Voltage Q 7-50 50-150 >150 10-50 50-100 >100 Leakage Current low Cost Comments <10nA < 1 .0M* Replaces MV830-MV840 DO-7 G lass CV830CV840 X C V1006-16CV1106-16 X X CV1620CV1650 X X X X