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    IXTH26N50

    Abstract: IXTH26N45 ixtm26n50 TL 1074 CT
    Text: I X Y S IDE CORP 1 ° Mbflb52b 000D350 3 I -' □ IX Y S MegaNIOS FETs IXTH26N50, 45 IXTM26N50, 45 MAXIMUM RATINGS Parameter Sym. IXTH26N45 IXTM26N45 IXTH26N50 IXTM26N50 Unit Drain-Source Voltage 1 Vdss 450 500 Vdc V dgr 450


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    IXTH26N45 IXTH26N50 IXTM26N45 IXTM26N50 Mbflb22b IXTH26N50, 00ESN0TINCLUOE TL 1074 CT PDF

    1xys

    Abstract: D-6840 D6840 VB035-08N04 VB024-08N04 VB035-04N04 VB010 VB015-10N04 VB035 VB024-04N04
    Text: 4b E D • I X Y S Mbflb25b D00127S 1 «IXY CORP □IXYS PRELIMINARY TECHNICAL INFORMATION* Data Sheet No. 911014A November 1991 VB006 VB015 VB035 Single-Phase Diode Rectifier Bridge VB010 VB024 • C om pact Housing


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    Mbflb25b D00127S 11014A VB006 VB015 VB035 ---N02 VB015-- VB024-- VB010 1xys D-6840 D6840 VB035-08N04 VB024-08N04 VB035-04N04 VB015-10N04 VB035 VB024-04N04 PDF