N3007 Search Results

MN3007

Abstract: N3007 s3d8 MN3000 series
Contextual Info: MN3000 Series N3007 N3007 1024-STAGE LOW NOISE BBD • General description U n it: mm inch The M N3007 is a 1024-stage long delay low noise BBD th a t provides a signal delay o f up to 51.2msec. The M N3007 is p a rticu la rly suitable fo r use as reverberation

MN3007

Abstract: reverb chorus Effect reverberation delay mn3007 MN3000 TA2512
Contextual Info: MN3000 Series N3007 N3007 1024-STAGE LOW NOISE BBD • General description U n it: mm inch The M N3007 is a 1024-stage long delay low noise BBD th a t provides a signal delay o f up to 51.2msec. The M N3007 is p a rticu la rly suitable fo r use as reverberation

MN3007

Abstract: bbd delay MN3008 vte18i03v MN301 reverb AN6551 L-12 MM3009 MN3009
Contextual Info: DIGITAL MONOLITHIC INTEGRATED CIRCUITS MOS IVI W O IV^, E le c tric a l C h a ra c te ristic s Function T yp e No. (T a — 25°C) Signal D elay T im e Input Signal Frequency V 0 = —1 8 ^ + 0 . 3V Signal Delays fi I n p u t S i g n a l S w in g Vi I n s e r ti o n L osj

flanger

Abstract: MN3007 N3006 chorus Effect mn3001 MN3008 MN3010 N3009 mn3002 delay MN3005
Contextual Info: BBD's for variable delay lines in audio frequency range & M N 3001 M N 3 00 2 M N 3003 M N 3005 M N 3008 M N 3006 M N 3007 M N 3 00 9 È S ^^Ê ^^iâÊ S Ê ^^^^^^^S Ê Ê S Ê ÎÊ ^S âS S Ê ^S ^^S S Ê ^^& & Ê Ê ^IiS S Ê Ê ^Ê i t D —fcP 500 •

PC73UD85C14CTF

Abstract: PC73UD13C630TF V300513 W300514 G300524 S300718
Contextual Info: Semiconductor Semiconductorfuses AC fuses Protistor Square-body Fuses PSC aR sizes 7x - 650 V to 1300 VAC IEC Terminals - French 70 - 73 End contacts Size 70 71 72 73 Designation 12,5 12,5 12,5 12,5 12,5 12,5 12,5 12,5 12 12 11 11 11 10 8 12,5 12,5 12,5

Contextual Info: N3007LSS SINGLE N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database. Features NEW PRODUCT • • • • • • • • Mechanical Data • • Low On-Resistance • 7mΩ @ VGS = 10V • 10mΩ @ VGS = 4.5V

BRX49 SCR

Abstract: c106b1 scr scr c103b SCR C106D1 scr 2N5062 SCR Brx45 c103b SCR 2N5061 scr 2n3668 2N4170
Contextual Info: SCRS Silicon Controlled Rectifiers Metal/Plastic Packages 0.8 to 110 Am peres RMS 15 to 1200 Volts 0.8 IT (AMPS) @ T c (°C) ITSM(AMPS) 55 55 55 55 60 60 6.0 6.0 6.0 6.0 10 10 ; TO-18 CASE f TO-92 TO-92-18R VRRM (VOLTS) 15 2N876 2N884 30 2N877 2N885 2N3001

DMN3007LSS

Abstract: N3007 N3007LS DMN3007LSS-13
Contextual Info: N3007LSS SINGLE N-CHANNEL ENHANCEMENT MODE MOSFET Features • • • • • • • • Mechanical Data • • Low On-Resistance • 7mΩ @ VGS = 10V • 10mΩ @ VGS = 4.5V Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage

Contextual Info: N3007LSS SINGLE N-CHANNEL ENHANCEMENT MODE MOSFET Features • • • • • • • • Mechanical Data • • Low On-Resistance • 7m @ VGS = 10V • 10m @ VGS = 4.5V Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage

DMN3007LSS

Abstract: N3007LS
Contextual Info: N3007LSS SINGLE N-CHANNEL ENHANCEMENT MODE MOSFET Features • • • • • • • • Mechanical Data • • Low On-Resistance • 7mΩ @ VGS = 10V • 10mΩ @ VGS = 4.5V Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage

Contextual Info: '' MN3003 Series [• mr HIGH-ACCURACY 10-Bit D/A C O N VERTERS MICRO NETWORKS DESCRIPTION FEATURES T h e M N 3 0 0 3 S e rie s a re 10-bit, v o lta g e -o u tp u t, d ig ita l-to a n a lo g c o n v e rte rs . E a c h u n it is c o m p le te w ith in te rn a l

DMN3007LSS

Abstract: DMN3007LSS-13 J-STD-020D N3007LS
Contextual Info: N3007LSS SINGLE N-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database. Features NEW PRODUCT • • • • • • • • Mechanical Data • • Low On-Resistance • 7mΩ @ VGS = 10V • 10mΩ @ VGS = 4.5V Low Gate Threshold Voltage

Contextual Info: N3007LSS SINGLE N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits RDS ON max ID max TA = +25°C 7mΩ @ VGS = 10V 16A 10mΩ @ VGS = 4.5V 13.5A V(BR)DSS 30V Description This MOSFET has been designed to minimize the on-state resistance (RDS(on) and yet maintain superior switching

Contextual Info: MOS 1C, LSI N3007 M N 3007 □ 1 0 2 4 - -r x s b b d 1024-Stage Low Noise B B D for Analog Signal Delays H #St ^ /D e sc rip tio n M N 3007 l ± , Unit ' i 3 3 6 S 3 & 1024 X B B D T", ° > ? 'r " -f H o - y >f 3.3 + 0.1 5 1 .2 m s * ' ? # h J x i t . ilx i$i X" i - o

W300514

Abstract: PC273UD13C11CTF F300523 PROTISTOR FERRAZ 1000V H300525 B300496 S300511 PC73UD13C630TF E301994 V300513
Contextual Info: Semiconductor Semiconductorfuses AC fuses Protistor Square-body Fuses PSC aR sizes 7x - 650 V to 1300 VAC Main characteristics Recognized 650 to 1300VAC / 63 to 2800A. • • • • • • • • Exceptionally low I2T, Watt losses. Non-magnetic construction, highly reliable low voltage.

2AN6551

Contextual Info: DIGITAL MONOLITHIC INTEGRATED CIRCUITS MOS MOS 1C, LSI E le c tr ic a l C h a r a c te r is t ic s T y p e No. F u n c tio n (T a = 2 5 °C ) VTE= —18— h0.3V Ite m Sym bol Signal Delay Time Vo= —18 — 1-0.3V Input Signal 1’requencv T opr=-20~+60t

N3007LS

Contextual Info: N3007LSS SINGLE N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database. Features NEW PRODUCT • • • • • • • • Mechanical Data • • Low On-Resistance • 7mΩ @ VGS = 10V • 10mΩ @ VGS = 4.5V