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    NE1280 Price and Stock

    SiTime Corporation SIT3372AC-2B3-30NE128.000000

    MEMS OSC VCXO 128.0000MHZ LVDS
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SIT3372AC-2B3-30NE128.000000 1
    • 1 $9.9
    • 10 $9.281
    • 100 $8.6621
    • 1000 $7.734
    • 10000 $7.734
    		Buy Now

    SiTime Corporation SIT3372AC-4E9-33NE128.000000

    MEMS OSC VCXO 128.0000MHZ HCSL
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SIT3372AC-4E9-33NE128.000000 1
    • 1 $10.92
    • 10 $10.241
    • 100 $9.5583
    • 1000 $8.53417
    • 10000 $8.53417
    		Buy Now

    SiTime Corporation SIT3372AC-1B2-33NE128.000000

    MEMS OSC VCXO 128.0000MHZ LVPECL
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SIT3372AC-1B2-33NE128.000000 1
    • 1 $13
    • 10 $12.165
    • 100 $11.3256
    • 1000 $11.15786
    • 10000 $11.15786
    		Buy Now

    SiTime Corporation SIT3372AC-4B2-25NE128.000000

    MEMS OSC VCXO 128.0000MHZ HCSL
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SIT3372AC-4B2-25NE128.000000 1
    • 1 $13
    • 10 $12.165
    • 100 $11.3256
    • 1000 $11.15786
    • 10000 $11.15786
    		Buy Now

    SiTime Corporation SIT3372AC-4B3-28NE128.000000

    MEMS OSC VCXO 128.0000MHZ HCSL
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SIT3372AC-4B3-28NE128.000000 1
    • 1 $9.9
    • 10 $9.281
    • 100 $8.6621
    • 1000 $7.734
    • 10000 $7.734
    		Buy Now
    Find more NE1280 price and stock on Findchips.com

    NE1280 Datasheets (9)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    NE1280100 NEC HETERO JUNCTION FIELD EFFECT TRANSISTOR Original PDF
    NE1280100 NEC Semiconductor Selection Guide Original PDF
    NE1280100 NEC Semiconductor Selection Guide 1995 Original PDF
    NE1280200 NEC HETERO JUNCTION FIELD EFFECT TRANSISTOR Original PDF
    NE1280200 NEC Semiconductor Selection Guide Original PDF
    NE1280200 NEC Semiconductor Selection Guide 1995 Original PDF
    NE1280400 NEC Semiconductor Selection Guide Original PDF
    NE1280400 NEC Semiconductor Selection Guide 1995 Original PDF
    NE1280400 NEC K-BAND MEDIUM POWER AMPLIFIE N-CHANNEL HJ-FET CHIP Original PDF

    NE1280 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    NE1280100

    Abstract: NE1280200 NE1280400 ca 9088 PT 14-106
    Text: NE1280100 NE1280200 NE1280400 KA-BAND MEDIUM POWER HETERO-JUNCTION FET OUTLINE DIMENSIONS Units in µm FEATURES NE1280100 • HIGH FREQUENCY OPERATION: Up to 40 GHz • HIGH POWER OUT: Up to 1/2 Watt D • HIGH LINEAR GAIN: Over 10 dB at 18.7 GHz • HIGH EFFICIENCY: Up to 23% PAE


    Original     		PDF NE1280100 NE1280200 NE1280400 NE1280 NE1280100 NE1280200 NE1280406 24-Hour NE1280400 ca 9088 PT 14-106

    PT 14-106

    Abstract: No abstract text available
    Text: NE1280100 NE1280200 NE1280400 KA-BAND MEDIUM POWER HETERO-JUNCTION FET OUTLINE DIMENSIONS Units in µm FEATURES NE1280100 • HIGH FREQUENCY OPERATION: Up to 40 GHz • HIGH POWER OUT: Up to 1/2 Watt D • HIGH LINEAR GAIN: Over 10 dB at 18.7 GHz • HIGH EFFICIENCY: Up to 23% PAE


    Original     		PDF NE1280100 NE1280200 NE1280400 NE1280100 NE1280 NE1280400 24-Hour PT 14-106

    kaba

    Abstract: NE1280100 NE1280200 NE1280400
    Text: NE1280100 NE1280200 NE1280400 KA-BAND MEDIUM POWER HETERO-JUNCTION FET OUTLINE DIMENSIONS Units in µm FEATURES NE1280100 • HIGH FREQUENCY OPERATION: Up to 40 GHz • HIGH POWER OUT: Up to 1/2 Watt D • HIGH LINEAR GAIN: Over 10 dB at 18.7 GHz • HIGH EFFICIENCY: Up to 23% PAE


    Original     		PDF NE1280100 NE1280200 NE1280400 NE1280 NE1280100 NE1280200 24-Hour kaba NE1280400

    NE9004

    Abstract: NE850R5 9002 NE85001 NE9000 NE9001 ne900
    Text: Typical Linear Gain vs. Frequency Unmatched Driver Devices 24.0 Linear Gain dB 21.0 NE850R5 18.0 NE9001/9002 NE9000 15.0 12.0 NE1280 NE85001 9.0 6.0 NE9004 3.0 0.3 10.0 1.0 30.0 Frequency (GHz) EXCLUSIVE NORTH AMERICAN AGENT FOR RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS


    Original     		PDF NE850R5 NE9001/9002 NE9000 NE1280 NE85001 NE9004 24-Hour NE9004 NE850R5 9002 NE85001 NE9000 NE9001 ne900

    Untitled

    Abstract: No abstract text available
    Text: NE1280100 NE1280200 NE1280400 KA-BAND MEDIUM POWER HETERO-JUNCTION FET OUTLINE DIMENSIONS Units in µm FEATURES NE1280100 • HIGH FREQUENCY OPERATION: Up to 40 GHz • HIGH POWER OUT: Up to 1/2 Watt D • HIGH LINEAR GAIN: Over 10 dB at 18.7 GHz • HIGH EFFICIENCY: Up to 23% PAE


    Original     		PDF NE1280100 NE1280200 NE1280400 NE1280 NE1280100 NE1280200 24-Hour

    NE1280100

    Abstract: NE1280200 NE1280400
    Text: PRELIMINARY DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE1280 SERIES K-BAND MEDIUM POWER AMPLIFIE N-CHANNEL HJ-FET CHIPS CHIP DIMENSIONS unit: µm DESCRIPTION The NE1280 series is medium power HJ-FET chips which offer high output power and high gain for telecom


    Original     		PDF NE1280 NE1280100 NE1280100 NE1280200 NE1280400 NE12Special:

    micro servo 9g

    Abstract: uPa2003 micro servo 9g tower pro 2SK1060 uPD3599 201 Zener diode 2SK2396 upc1237 infrared sensor TSOP - 1836 2SK518
    Text: The export of these products from Japan is regulated by the Japanese government. The export of some or all of these products may be prohibited without governmental license. To export or re-export some or all of these products from a country other than Japan may also be prohibited without a license from that country. Please call


    Original     		PDF V20HL, V25HS, V30HL, V30MX, V35HS, V40HL, V50HL, V55PI, X10679EJDV0SG00 micro servo 9g uPa2003 micro servo 9g tower pro 2SK1060 uPD3599 201 Zener diode 2SK2396 upc1237 infrared sensor TSOP - 1836 2SK518

    2SK2396

    Abstract: PC2763 pc1658 ne27283 2SC3545 2SC3357 2sc2757 ne93239 2SC2570A PC2711
    Text: CD-ROM版RF & マイクロ波デバイス CD-ROM X13769XJ2V0CD00 11−1 RF & マイクロ波デバイス IC • 可変利得増幅器（µ PCx×××，µPG××××） 品 名 µPC8119T アプリケーション 移動通信 電源電圧 電流 周波数


    Original     		PDF X13769XJ2V0CD00 PC8119T PC8120T PC8130TA PC8131TA PG175TA PC2723T PC3206GR PC2748 PC2745 2SK2396 PC2763 pc1658 ne27283 2SC3545 2SC3357 2sc2757 ne93239 2SC2570A PC2711

    uPD16305

    Abstract: uPD63724A upc5024 UPC5023 2SC1940 uPC1237 uPD65656 UPC458 UPC2710 UPD65943
    Text: Search by Product Name Find tool 1. Click the icon on the tool bar. 2. The find dialog box will be displayed. 3. Input the full product name or part of the product name to Find be located and click . 4. A characteristic table will be displayed if the retrieved product name is clicked.


    Original     		PDF PD43256A> PD43256A X13769XJ2V0CD00 PD750004 PD750006 PD750008 PD75P0016 PD750104 PD750106 PD750108 uPD16305 uPD63724A upc5024 UPC5023 2SC1940 uPC1237 uPD65656 UPC458 UPC2710 UPD65943

    nf025

    Abstract: NE27283 upc27 x-band power transistor 100W NE42484 P147D 2SK2396 uPG508 nf025db 2SC5408
    Text: CD-ROM RF and Microwave Devices CD-ROM X13769XJ2V0CD00 11-1 RF and Microwave Devices IC • AGC AMP. µ PCx×××, µPG×××× Part Number Applications Supply Voltage (V) Supply Current (mA) Operating Frequency (MHz) µPC8119T Mobile Comm. 3 11 100–1920


    Original     		PDF X13769XJ2V0CD00 950MHz 500MHz PC2794 PC1687 PC2744 PC2775/µ nf025 NE27283 upc27 x-band power transistor 100W NE42484 P147D 2SK2396 uPG508 nf025db 2SC5408

    lg crt monitor circuit diagram

    Abstract: micro servo 9g samsung lcd tv power supply diagrams MP 1008 es uPa2003 8049 microcontroller APPLICATION LG lcd tv tuner pioneer car dvd service manual lg washing machine circuit diagram 8ch pnp DARLINGTON TRANSISTOR ARRAY
    Text: SEMICONDUCTORS SELECTION GUIDE Microcomputer 1 IC Memory 2 Semi-Custom IC 3 Particular Purpose 4 General Purpose Linear IC 5 Transistor/Diode/Thyristor 6 GaAs Device/ Silicon Microwave Semiconductor 7 Optical Device 8 Packages 9 Index 10 October 1998 The export of these products from Japan is regulated by the Japanese government. The export of some or all of


    Original     		PDF X10679EJGV0SG00 lg crt monitor circuit diagram micro servo 9g samsung lcd tv power supply diagrams MP 1008 es uPa2003 8049 microcontroller APPLICATION LG lcd tv tuner pioneer car dvd service manual lg washing machine circuit diagram 8ch pnp DARLINGTON TRANSISTOR ARRAY

    MICROPROCESSOR Z80

    Abstract: uPD72020 uPC5102 transistor 2p4m UPD6487 2SD1557 2SJ 3305 UPD77529 TRANSISTOR SOD MARKING CODE 352A micro servo 9g tower pro
    Text: The export of these products from Japan is regulated by the Japanese government. The export of some or all of these products may be prohibited without governmental license. To export or re-export some or all of these products from a country other than Japan may also be prohibited without a license from that country. Please call


    Original     		PDF Z80TM V20TM, V20HLTM, V25TM, V25HSTM, V30TM, V30HLTM, V33TM, V33ATM, V35TM, MICROPROCESSOR Z80 uPD72020 uPC5102 transistor 2p4m UPD6487 2SD1557 2SJ 3305 UPD77529 TRANSISTOR SOD MARKING CODE 352A micro servo 9g tower pro

    uPC2581

    Abstract: uPC2002 2sd1557 uPA67C uPB582 upc1237 uPC317 2P4M PIN DIAGRAM 2SC4328 uPC157
    Text: C&C for Human Potential Microcomputer 1 SEMICONDUCTOR SELECTION GUIDE GUIDE BOOK IC Memory 2 Semi-Custom IC 3 Particular Purpose IC 4 General Purpose Linear IC 5 Transistor / Diode / Thyristor 6 Microwave Device / Consumer Use High Frequency Device 7 Optical Device 8


    Original     		PDF PD7500 X10679EJAV0SG00 MF-1134) 1995P uPC2581 uPC2002 2sd1557 uPA67C uPB582 upc1237 uPC317 2P4M PIN DIAGRAM 2SC4328 uPC157

    ne6500278

    Abstract: NEZ1414 NES2527B-30 NE1280100 NE6501077 NE85001 NE850R5 NES1821B-30 NES1821P-50
    Text: Power GaAs FET Selection Graph Devices by Power by Frequency 49.0 NEZ4450-15D/15DL NES1821P-50 47.0 NES1821B-30 NEZ5964-15D/15DL NES2527B-30 NEZ6472-15D/15DL 45.0 NEZ3642-15D/15DL NEZ7785-15D/15DL 43.0 NEZ7177-8D/8DL 41.0 NEZ3642-8D NEZ4450-8D/8DL NEZ7785-8D/8DL


    Original     		PDF NEZ4450-15D/15DL NES1821P-50 NES1821B-30 NEZ5964-15D/15DL NES2527B-30 NEZ6472-15D/15DL NEZ3642-15D/15DL NEZ7785-15D/15DL NEZ7177-8D/8DL NEZ3642-8D ne6500278 NEZ1414 NES2527B-30 NE1280100 NE6501077 NE85001 NE850R5 NES1821B-30 NES1821P-50

    uPD3599

    Abstract: transistor nec 2SK2396 MOS FET BUZ 444 MC-7643 nec 3S4M 4305 regulator nec RD2.4S equivalent 2SC4305 NEC 2sA1441 nec NPN transistor SST 117
    Text: SEMICONDUCTORS SELECTION GUIDE Microcomputer 1 IC Memory 2 Seimi-Custom IC 3 Particular Purpose 4 General Purpose Linear IC 5 Transistor/Diode/Thyristor 6 GaAs Device/ Silicon Microwave Semiconductor 7 Optical Device 8 Packages 9 Index 10 April 1998 The export of these products from Japan is regulated by the Japanese government. The export of some or all of


    Original     		PDF X10679EJFV0SG00 uPD3599 transistor nec 2SK2396 MOS FET BUZ 444 MC-7643 nec 3S4M 4305 regulator nec RD2.4S equivalent 2SC4305 NEC 2sA1441 nec NPN transistor SST 117

    UAA 1006

    Abstract: manual* cygnus sl 5000 transistor marking T79 ghz PC1658G NEC Ga FET marking code T79 gaas fet T79 pc1658 MC-7712 2SC5431 NEC U71
    Text: NEC Offices NEC Electronics Europe GmbH Oberrather Str. 4 D-40472 Düsseldorf, Tel. (02 11) 65 03 01 Fax (02 11) 65 03-3 27 NEC Electronics Italiana S.R.L. Via Fabio Filzi, 25A I-20124 Milano Tel. (02) 66 75 41 Fax (02) 66 75 42 99 NEC Electronics (Germany) GmbH


    Original     		PDF D-40472 I-20124 I-00139 D-30177 GB-MK14 D-81925 S-18322 F-78142 E-28007 UAA 1006 manual* cygnus sl 5000 transistor marking T79 ghz PC1658G NEC Ga FET marking code T79 gaas fet T79 pc1658 MC-7712 2SC5431 NEC U71

    sc5 s dc 6v relay

    Abstract: P48D-70-600 UPD66010 UPD7752 AC03E uPD7520 uPA1601 UPD70208H uPD72020 uPD16503
    Text: SEMICONDUCTORS SELECTION GUIDE Microcomputer 1 IC Memory 2 Semi-Custom IC 3 Particular Purpose IC 4 General Purpose Linear IC 5 Transistor/Diode/Thyristor 6 Microwave Device/ Consumer-Use High Frequency Device 7 Optical Device 8 Packages 9 Index 10 October 1997


    Original     		PDF Corpora1-504-2860 X10679EJEV0SG00 sc5 s dc 6v relay P48D-70-600 UPD66010 UPD7752 AC03E uPD7520 uPA1601 UPD70208H uPD72020 uPD16503

    Untitled

    Abstract: No abstract text available
    Text: NE1280100 NE1280200 NE1280400 KA-BAND MEDIUM POWER HETERO-JUNCTION FET OUTLINE DIMENSIONS Units in jam FEATURES NE1280100 • HIGH FREQUENCY OPERATION: Up to 40 GHz • HIGH POWER OUT: Up to 1/2 Watt • HIGH LINEAR GAIN: Over 10 dB at 18.7 GHz • HIGH EFFICIENCY: Up to 23% PAE


    OCR Scan     		PDF NE1280100 NE1280200 NE1280400 NE1280100 NE1280 NE1280400 24-Hour

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE1280 SERIES K-BAND MEDIUM POWER AMPLIFIE N-CHANNEL HJ-FET CHIPS DESCRIPTION CHIP DIMENSIONS unit: jum The NE1280 series is medium power HJ-FET chips which offer high output power and high gain for telecom


    OCR Scan     		PDF NE1280 NE1280100 NE1280100 NE1280200 NE1280400

    NE1280400

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET NE1280100 NE1280200 NE1280400 KA-BAND MEDIUM POWER HETERO-JUNCTION FET OUTLINE DIMENSIONS Units in^tm FEATURES NE1280100 • HIGH FREQUENCY OPERATION: Up to 40 GHz • HIGH POWER OUT: Up to 1/2 Watt • HIGH LINEAR GAIN: Over 10 dB at 18.7 GHz


    OCR Scan     		PDF NE1280100 NE1280200 NE1280400 NE1280100 NE1280 NE1280400 cell0100

    transistor NEC D 582

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE1280 SERIES K-BAND MEDIUM POWER AMPLIFIE N-CHANNEL HJ-FET CHIPS DESCRIPTION CHIP DIMENSIONS unit: firn The NE1280 series is medium power HJ-FET chips which offer high output power and high gain for telecom


    OCR Scan     		PDF NE1280 NE1280100 NE1280200 NE1280400 transistor NEC D 582

    xm 85-8-0

    Abstract: NE1280 PT 14-106
    Text: KA-BAND MEDIUM POWER HETERO-JUNCTION FET FEATURES NE1280100 NE1280200 NE1280400 OUTLINE DIMENSIONS Units in nm NE1280100 • HIGH FREQUENCY OPERATION: Up to 40 GHz • HIGH POWER OUT: Up to 1/2 Watt • HIGH LINEAR GAIN: Over 10 dB at 18.7 GHz • HIGH EFFICIENCY: Up to 23% PAE


    OCR Scan     		PDF NE1280100 NE1280200 NE1280400 NE1280100 NE1280 NE1280400 xm 85-8-0 PT 14-106

    ne900075

    Abstract: NE9000
    Text: X and Ku-Band Internally Matched GaAs Devices Typical Specifications @ Tc = 25°C Uiwartty Linear Power Added PidB Gain Efficiency1 V d s dBm (dB) (% ) (V) Pmt P out e w w m tf Dootm^ni (A) IMS (dBc) (V) (A) Package Style NEZ1414-2E 14 to 14.5 34.0 7,5 27


    OCR Scan     		PDF NEZ1414-2E NEZ1414-4E NEZ1414-8E NEZ1011-2E NEZ1011-8E ne900075 NE9000

    NEM0899F01-30

    Abstract: No abstract text available
    Text: Discrete Power Devices Selection Guide, 2-2 Power Devices Selection Guide US BAND INTERNALLY MATCHED GaAs DEVICES Typical Specifications @ Ta = 25'C » r u-v w i JL ct Ruawini i Part Number Frequency Range PidB GHz (dBm) Linearity Linear Power Added


    OCR Scan     		PDF NES1821B-30 NES1821P-50 NES2527B-30 NEZ3436-30E NEL200101-24 NEL2004F02-24 NEL2012F03-24 NEM0899F01-30