Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    NE71300N Search Results

    NE71300N Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    NE71300N NEC Low noise L to K-band GaAs MESFET. Idss 20 to 50 mA. Original PDF
    NE71300-N NEC L to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET Original PDF
    NE71300-N-AZ NEC FET Transistor: L to Ku BAND LOW NOISE AMPLIFIER: N-CHANNEL GaAs MES FET Original PDF

    NE71300N Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: LOW NOISE L TO K-BAND GaAs MESFET NE71300 3 24 • HIGH ASSOCIATED GAIN GA = 9.5 dB TYP at f = 12 GHz 2.5 21 Noise Figure, NF dB • LOW NOISE FIGURE NF = 1.6 dB TYP at f = 12 GHz • LG = 0.3 µm, WG = 280 µm • EPITAXIAL TECHNOLOGY • LOW PHASE NOISE


    Original
    PDF NE71300 NE71300 NE71300N NE71300M NE71300L 24-Hour

    C10535E

    Abstract: NE713 NE71300 NE71300-L NE71300-M NE71300-N NE71383B NE71383
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original
    PDF

    73E-12

    Abstract: 20771 NE71300 NE71300L NE71300M NE71300N lg 8838 LS 7642
    Text: LOW NOISE L TO K-BAND GaAs MESFET NE71300 3 24 • HIGH ASSOCIATED GAIN GA = 9.5 dB TYP at f = 12 GHz 2.5 21 Noise Figure, NF dB • LOW NOISE FIGURE NF = 1.6 dB TYP at f = 12 GHz • LG = 0.3 µm, WG = 280 µm • EPITAXIAL TECHNOLOGY • LOW PHASE NOISE


    Original
    PDF NE71300 NE71300 6e-12 15e-12 5e-12 04e-12 24-Hour 73E-12 20771 NE71300L NE71300M NE71300N lg 8838 LS 7642

    C10535E

    Abstract: NE713 NE71300 NE71300-L NE71300-M NE71300-N NE71383B
    Text: DATA SHEET GaAs MES FET NE713 L to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET FEATURES x Low noise figure NF = 0.6 dB TYP. at f = 4 GHz x High associated gain Ga = 14 dB TYP. at f = 4 GHz x Gate width: Wg = 280 Pm x Gate Length: Lg = 0.3 Pm ORDERING INFORMATION


    Original
    PDF NE713 NE71300-N NE71300-M NE71300-L NE71383B NE71383B] C10535E NE713 NE71300 NE71300-L NE71300-M NE71300-N NE71383B

    NE71300

    Abstract: NE71300L NE71300M NE71300N 0460 lg 8838
    Text: LOW NOISE L TO K-BAND GaAs MESFET NE71300 • LOW NOISE FIGURE NF = 1.6 dB TYP at f = 12 GHz Noise Figure, NF dB • HIGH ASSOCIATED GAIN GA = 9.5 dB TYP at f = 12 GHz • LG = 0.3 µm, WG = 280 µm • EPITAXIAL TECHNOLOGY • LOW PHASE NOISE DESCRIPTION


    Original
    PDF NE71300 NE71300 6e-12 15e-12 5e-12 04e-12 24-Hour NE71300L NE71300M NE71300N 0460 lg 8838

    Untitled

    Abstract: No abstract text available
    Text: LOW NOISE L TO K-BAND GaAs MESFET NE71300 NOISE FIGURE & A S SO C IA T E D GAIN v s. FR EQ U EN C Y Vds = 3 V, Ids = 10 mA FEATURES LOW NOISE FIGURE NF = 1.6 dB TYP at f = 12 G Hz HIGH ASSOCIATED GAIN m G a = 9.5 dB T Y P at f = 12 G Hz Lg = 0.3 |_im, Wg = 280 |_im


    OCR Scan
    PDF NE71300 NE71300 NE71300N NE71300M NE71300L 24-Hour

    JE 1692

    Abstract: No abstract text available
    Text: LOW NOISE L TO K-BAND GaAs MESFET NE71300 NOISE FIGURE & A S SO C IA T E D GAIN v s. FR EQ U EN C Y Vds = 3 V, Ids = 10 mA FEATURES LOW NOISE FIGURE NF = 1.6 dB TYP at f = 12 G Hz HIGH ASSOCIATED GAIN GA = 9 . 5 d B T Y P a t f = 12 G H z m Lg = 0.3 |_im, W g = 280 |_im


    OCR Scan
    PDF NE71300 JE 1692

    NEC D 809 F

    Abstract: NEC D 809 71383B NEC D 809 k
    Text: DATA SHEET GaAs MES FET NE713 L to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET FEATURES • Low noise figure NF = 0.6 dB TYP. at f = 4 GHz • High associated gain Ga = 14 dB TYP. a t f = 4 G H z • Gate width: Wg = 280 fim • Gate Length: Lg = 0.3 /xm


    OCR Scan
    PDF NE713 NE71300-N NE71300-M NE71300-L NE71383B NE71383B] NE71300] NEC D 809 F NEC D 809 71383B NEC D 809 k

    Untitled

    Abstract: No abstract text available
    Text: LOW NOISE L TO K-BAND GaAs MESFET NE71300 NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY V ds = 3 V, I ds = 10 mA FEATURES LOW NOISE FIGURE NF = 1.6 dB TYP at f = 12 GHz HIGH ASSOCIATED GAIN Ga = 9.5 dB TYP at f = 12 GHz ffl 2. L g = 0.3 urn, W g = 280 nm <


    OCR Scan
    PDF NE71300 TheNE71300 NE71300 3e-12 6e-12 15e-12 5e-12 04e-12