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NEC Electronics Group NE76118-T1 Transistor - Datasheet Reference
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NE761 Datasheets (21)

Part	Manufacturer	Description	Datasheet Type	PDF
NE76100	NEC	MES type field effect transistor	Original	PDF
NE76100	NEC	General purpose GaAs MESFET. IDSS 30 to 100 mA.	Original	PDF
NE76100M	NEC	General purpose GaAs MESFET. IDSS 60 to 100 mA.	Original	PDF
NE76100N	NEC	General purpose GaAs MESFET. IDSS 30 to 60 mA.	Original	PDF
NE76118	NEC	Semiconductor Selection Guide	Original	PDF
NE76118	NEC	GaAs MESFET L TO S BAND LOW NOISE AMPLIFIER	Original	PDF
NE76118	NEC	L to S BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET	Original	PDF
NE76118-T1	NEC	L to S BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET	Original	PDF
NE76118-T2	NEC	L to S BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET	Original	PDF
NE76184A	NEC	Semiconductor Selection Guide	Original	PDF
NE76184A	NEC	Semiconductor Selection Guide 1995	Original	PDF
NE76184A	NEC	GENERAL PURPOSE FET N-CHANNEL GaAs MES FET	Original	PDF
NE76184A	Unknown	FET Data Book	Scan	PDF
NE76184A(11)	NEC	MES type field effect transistor	Original	PDF

NE76184A(22)	NEC	MES type field effect transistor	Original	PDF
NE76184AS	NEC	GENERAL PURPOSE L TO X-BAND GaAs MESFET	Original	PDF
NE76184A-SL	NEC	GENERAL PURPOSE FET N-CHANNEL GaAs MES FET	Original	PDF
NE76184A-T1	NEC	GENERAL PURPOSE FET N-CHANNEL GaAs MES FET	Original	PDF
NE76184A-T1A	NEC	GENERAL PURPOSE FET N-CHANNEL GaAs MES FET	Original	PDF
NE76184A-TI	NEC	GENERAL PURPOSE L TO X-BAND GaAs MESFET	Original	PDF

NE761 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
D450 Nchannel Abstract: C10535E NE76118 NE76118-T1 NE76118-T2 NEC 3536 Text: DATA DATA SHEET SHEET GaAs MES FET NE76118 L to S BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET DESCRIPTION PACKAGE DIMENSIONS NE76118 is a n-channel GaAs MES FET housed in MOLD package. in millimeters FEATURES 2.1±0.2 1.25±0.1 • Low noise figure PACKING STYLE	Original	NE76118 NE76118 NE76118-T1 NE76118-T2 D450 Nchannel C10535E NE76118-T1 NE76118-T2 NEC 3536	PDF
NEC Ga FET marking L Abstract: NE76184B marking K gaas fet NEC Ga FET marking A nec gaas fet marking NEC Ga FET marking Rf nec 9000 NEC Ga FET marking V NEC Ga FET "marking V" NEC Ga FET Text: DATA SHEET GaAs MES FET NE76184B L to X BAND OSC N-CHANNEL GaAs MES FET DESCRIPTION NE76184B is a N-channel GaAs MES FET housed in ceramic package. The device is fabricated by ion implantation for improved RF and DC performance reliability and uniformity.	Original	NE76184B NE76184B NE76184B-T1 NE76184B-T1A NEC Ga FET marking L marking K gaas fet NEC Ga FET marking A nec gaas fet marking NEC Ga FET marking Rf nec 9000 NEC Ga FET marking V NEC Ga FET "marking V" NEC Ga FET	PDF
ne325 Abstract: small signal GaAs FET RF Transistor Selection ne324 Text: Small Signal GaAs FET Selection Graph Minimum Noise Figure, NF Min dB 2 NE332 1 NE324 NE325 1 4 2 6 8 10 12 16 20 30 Frequency, f (GHz) Gain, GA (dB) 20 NE325 10 NE324 NE332 NE760 NE761 1 2 4 6 8 10 12 16 20 30 Frequency, f (GHz) EXCLUSIVE NORTH AMERICAN AGENT FOR	Original	NE332 NE324 NE325 NE760 NE761 24-Hour ne325 small signal GaAs FET RF Transistor Selection ne324	PDF
ic lg 631 Abstract: NE76118 TVRO Text: GaAs MESFET L TO S BAND LOW NOISE AMPLIFIER New Plastic Package NE76118 • LOW COST MINIATURE PLASTIC PACKAGE (SOT-343) 25 4 20 • LOW NOISE FIGURE: 0.8 dB typical at 2 GHz Noise Figure, NF (dB) GA • HIGH ASSOCIATED GAIN: 13.5 dB typical at 2 GHz • LG = 1.0 µm, WG = 400 µm	Original	NE76118 OT-343) NE76118 NE76118-TI 24-Hour ic lg 631 TVRO	PDF
NE76100 Abstract: NE76100M NE76100N Text: GENERAL PURPOSE GaAs MESFET FEATURES • LG = 1.0 µm, WG = 400 µm DESCRIPTION NE76100 is a high performance gallium arsenide metal semiconductor field effect transistor chip. Its low noise figure makes this device appropriate for use in the second or third stages of	Original	NE76100 NE76100 NE76100N NE76100M 24-Hour NE76100M NE76100N	PDF
NE76118 Abstract: NE76118-T1 NE76118-T2 Text: GaAs MESFET L TO S BAND LOW NOISE AMPLIFIER • LOW COST MINIATURE PLASTIC PACKAGE SOT-343 25 4 20 Noise Figure, NF (dB) GA • HIGH ASSOCIATED GAIN: 13.5 dB typical at 2 GHz • LG = 1.0 µm, WG = 400 µm • TAPE & REEL PACKAGING DESCRIPTION The NE76118 is a low cost gallium arsenide metal semiconductor field effect transistor housed in a miniature (SOT-343)	Original	OT-343) NE76118 24-Hour NE76118-T1 NE76118-T2	PDF
NE76184AS Abstract: x-band power transistor NE76184A-SL NE76184A-TI Text: GENERAL PURPOSE L TO X-BAND GaAs MESFET NE76184AS NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY VDS = 3 V, IDS = 10 mA FEATURES 24 • HIGH ASSOCIATED GAIN: 12 dB typical at 4 GHz • LG = 1.0 µm, WG = 400 µm • LOW COST METAL/CERAMIC PACKAGE • TAPE & REEL PACKAGING OPTION AVAILABLE	Original	NE76184AS NE76184AS NE76184A-TI NE76184A-SL 24-Hour x-band power transistor NE76184A-SL NE76184A-TI	PDF
TC-2303 Abstract: NEC 3377 NE76184A transistor NEC D 582 transistor NEC D 587 NE76184A-SL NE76184A-T1 NE76184A-T1A p1085 Text: DATA SHEET GaAs MES FET NE76184A GENERAL PURPOSE FET N-CHANNEL GaAs MES FET DESCRIPTION NE76184A is a N-channel GaAs MES FET housed in ceramic package. The device is fabricated by ion implantation for improved RF and DC performance reliability and uniformity. Its	Original	NE76184A NE76184A NE76184A-SL NE76184A-T1 NE76184A-T1A TC-2303 NEC 3377 transistor NEC D 582 transistor NEC D 587 NE76184A-SL NE76184A-T1 NE76184A-T1A p1085	PDF
NE76100 Abstract: NE76100M NE76100N Text: GENERAL PURPOSE GaAs MESFET FEATURES DESCRIPTION Optimum Noise Figure, NFOPT dB • LG = 1.0 µm, WG = 400 µm 4 24 3.5 21 3 18 Ga 2.5 15 2 12 9 1.5 6 1 NF 0.5 3 NE76100 is a high performance gallium arsenide metal semiconductor field effect transistor chip. Its low noise figure	Original	NE76100 NE76100 NE76100N NE76100M 24-Hour NE76100M NE76100N	PDF
SG 2368 Abstract: LS 2027 audio amp c 2688 nec LS 2027 amp Text: DATA SHEET GaAs MES FET NE76184A GENERAL PURPOSE FET N-CHANNEL GaAs MES FET DESCRIPTION N E76184A is a N-channel GaAs MES FET housed in ce ramic package. The device is fabricated by ion im plantation for im proved RF and DC perform ance reliability and uniform ity. Its	OCR Scan	NE76184A NE76184A NE76184A-SL NE76184A-T1 NE76184A-T1A SG 2368 LS 2027 audio amp c 2688 nec LS 2027 amp	PDF
NEC 3536 Abstract: No abstract text available Text: DATA SHEET GaAs MES FET NE76118 L to S BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET DESCRIPTION NE76118 is a n-channel GaAs MES FET housed in MOLD package. PACKAGE DIMENSIONS in millimeters FEATURES • Low noise figure NF = 0.8 dB TYP. at f = 2 GHz •	OCR Scan	NE76118 NE76118 NE76118-T1 NE76118-T2 NEC 3536	PDF
low noise FET NEC U Abstract: ym 238 Text: DATA SHEET GaAs MES FET NE76184B L to X BAND OSC N-CHANNEL GaAs MES FET DESCRIPTION NE76184B is a N-channel GaAs MES FET housed in ce ramic package. The device is fabricated by ion im plantation for im proved RF and DC perform ance reliability and uniform ity.	OCR Scan	NE76184B NE76184B NE76184B-T1 NE76184B-T1A low noise FET NEC U ym 238	PDF
ne76184a Abstract: No abstract text available Text: GENERAL PURPOSE L TO X-BAND GaAs MESFET FEATURES NE76184A NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY V ds = 3 V, Id s = 10 m A L O W N O IS E F IG U R E : 0.8 dB typical at 4 GHz 24 H IG H A S S O C IA T E D G A IN : 21 12 dB typical at 4 GHz 18 L g = 1.0 tu n , W g = 4 0 0 jim	OCR Scan	NE76184A NE76184A S12S21\| 0QL5522 NE76184AS NE76184A-TI NE76184A-SL b427525	PDF
817 CN Abstract: No abstract text available Text: DATA SHEET GaAs MES FET NE76118 L to S BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET DESCRIPTION N E76118 is a n-channel GaAs MES FET housed in MOLD package. PACKAGE DIMENSIONS in millimeters FEATURES • 2 . 1± 0.2 Low noise figure 1.25±0.1 NF = 0.8 dB TYP. at f = 2 GHz	OCR Scan	NE76118 E76118 NE76118-T1 NE76118-T2er IR30-00-2 817 CN	PDF

equivalent 4435 Abstract: No abstract text available Text: GENERAL PURPOSE GaAs MESFET NE76100 NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY Vos = 3 V, los = 10 m A FEATURES LOW NOISE FIGURE: NF = 0.8 dB typical at f = 4 G Hz CO TJ HIGH ASSOCIATED GAIN: G a = 12.0 dB typical at f = 4 GHz Lq = 1.0 j.m , Wg = 400 (im	OCR Scan	NE76100 NE76100 E76100 lS22l NE76100N NE76100P equivalent 4435	PDF
Untitled Abstract: No abstract text available Text: GENERAL PURPOSE GaAs MESFET FEATURES NE76100 NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY Vds = 3 V, Ids = 10 mA LOW NOISE FIGURE: N F = 0.8 d B ty p ic a l at f = 4 G H z m "O HIGH ASSO CIATED GAIN: G a = 12.0 d B ty p ic a l at f = 4 G H z o z p T3 < Li_	OCR Scan	NE76100 IS12S21I NE76100 140nm NE76100N NE76100M	PDF
Untitled Abstract: No abstract text available Text: GaAs MESFET L TO S BAND LOW NOISE AMPLIFIER _ New Plastic Package FEATURES NE76118 NOISE FIGURE & A SSO C IA T ED GAIN vs. FREQUENCY LOW CO ST MINIATURE PLASTIC PACKAGE (SOT-343) CD LOW NOISE FIGURE: < CD 0.8 dB typical at 2 GHz m •o HIGH A SSO CIA TED GAIN:	OCR Scan	OT-343) NE76118 E76118 NE76118-TI	PDF
sem 2106 Abstract: 4957 GM Text: GaAs MESFET L TO S BAND LOW NOISE AMPLIFIER New Plastic Package FEATURES NE76118 NOISE FIGURE & AS SO CIATED GAIN v s . FREQUENCY LOW COST MINIATURE PLASTIC PACKAGE (SOT-343) m LOW NOISE FIGURE: < CD 0.8 dB typical at 2 GHz c cd HIGH ASSOCIATED GAIN: CD	OCR Scan	OT-343) NE76118 NE76118 NE76118-TI sem 2106 4957 GM	PDF
76184a Abstract: NE76184A/CEL Text: GENERAL PURPOSE LTO X-BAND GaAs MESFET NE76184A NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY V d s= 3 V, Ids= 10 mA FEATURES LOW NOISE FIGURE: 0.8 dB typical at 4 GHz HIGH ASSOCIATED GAIN: 12 dB typical at 4 GHz CD ~D o z U_ L g = 1.0 jim , Wg = 4 0 0 jim	OCR Scan	NE76184A NE76184A IS12S21I NE76184AS E76184A-TI E76184A-SL 76184a NE76184A/CEL	PDF
NE67383 Abstract: No abstract text available Text: General Purpose GaAs FETs Typical Specifications @ T a = 25°C Pw t m a '4 m . I NEW^ Güw> \|N EW *> I NEW > I N Ew V I NEW ^ »»a Vus Id s M ÊM mA (mA) p p fc M NE33200 NE67300 NE71300 NE76000 NE76100 0.3 0.3 0.3 0.3 1.0 280 280 280 280 400 0.1 0.1 0.1	OCR Scan	NE33200 NE67300 NE71300 NE76000 NE76100 NE76083A NE33284A NE25118 NE25139 NE25339 NE67383	PDF
NEC Ga FET marking Rf Abstract: nec gaas fet marking Text: DATA SHEET GaAs MES FET NE76184B L to X BAND OSC N-CHANNEL GaAs MES FET DESCRIPTION N E76184B is a N-channel GaAs MES FET housed in ce ram ic package. The device is fabricated by ion im plantation for im proved RF and DC perform ance reliability and uniform ity.	OCR Scan	NE76184B NE76184B NE76184B-T1 NE76184B-T1A IR30-00 NEC Ga FET marking Rf nec gaas fet marking	PDF
NE76184A at 5 GHz Abstract: NE76184A Text: GENERAL PURPOSE L TO X-BAND GaAs MESFET NE76184A NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY Vos = 3 V, Ids = 10 mA FEATURES LOW NOISE FIGURE: 24 0.8 dB typical at 4 GHz a> T} HIGH ASSOCIATED GAIN: 21 12 dB typical at 4 GHz 18 \£ 2 Lo s 1.0 im, Wo = 400	OCR Scan	NE76184A NE76184A S12S21\| NE76184A-SL. NE76184A at 5 GHz	PDF
U/25/20/TN26/15/850/NE7611B Abstract: No abstract text available Text: GaAs MESFET L TO S BAND LOW NOISE AMPLIFIER _ New Plastic Package FEATURES NE76118 NOISE FIGURE & ASSOCIATED G A IN vft. FREQUENCY V ds = 3 V, lo - 10 mA LOW COST MINIATURE PLASTIC PACKAGE (SOT-343) LOW NOISE FIGURE: < <D 0 .8 d B ty p ic a l a t 2 G H z	OCR Scan	OT-343) NE76118 NE7611B NE76118-TI 24-Hour U/25/20/TN26/15/850/NE7611B	PDF
4435 ag Abstract: 5q 1265 rf Text: GENERAL PURPOSE GaAs MESFET FEATURES NOISE FIGURE & ASSOCIATED GAINvs.FREQUENCY - • NE76100 LOW NOISE FIGURE: Vds = 3 V, Id s = 10 mA NF = 0.8 dB typical at f = 4 GHz	OCR Scan	NE76100 E76100 NE76100 NE76100N NE76100M 4435 ag 5q 1265 rf	PDF

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Not Specified NE76100

NEC Electronics Group NE76118-T1

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NE761 Datasheets (21)

NE761 Datasheets Context Search

D450 Nchannel

NEC Ga FET marking L

ne325

ic lg 631

NE76100

NE76118

NE76184AS

TC-2303

NE76100

SG 2368

NEC 3536

low noise FET NEC U

ne76184a

817 CN

equivalent 4435

Untitled

Untitled

sem 2106

76184a

NE67383

NEC Ga FET marking Rf

NE76184A at 5 GHz

U/25/20/TN26/15/850/NE7611B

4435 ag