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    NES3716Z Search Results

    NES3716Z Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    NES3716Z New England Semiconductor NPN SILICON POWER TRANSISTOR Scan PDF

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    NSP5665

    Abstract: sat 1205
    Text: Bipolar Power Transistors Page 1 of 12 Next Page Home Package Device Type VCEO sus Volts IC (max) Amps PD@ 25° C Watts fT MHZ NPN TO-39 2N1479 * 40 1.5 20/60@.2/4 1.4@.2/.02 5 1.5 NPN TO-39 2N1480 * 55 1.5 20/60@.2/4 1.4@.2/.02 5 1.5 NPN TO-39 2N1481 *


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    PDF 2N1479 2N1480 2N1481 2N1482 2N1483 2N1484 2N1485 2N1486 O-254 NSP6340 NSP5665 sat 1205

    NES3716Z

    Abstract: No abstract text available
    Text: NES3716Z NPN SILICON POWER TRANSISTOR 10 A M P E R E P O W E R T R A N S IS T O R NPN S ILIC O N • • • • Medium Speed Switiching Amplifier Excellent Safe Operating Area Total Switching Time @ 3A, 1.15|is M A X IM U M R A T IN G S R a tin g C o lle c to r-E m itte r V oltage


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    PDF NES3716Z NES3716Z

    Untitled

    Abstract: No abstract text available
    Text: Back to Bipolar Power Transistors NES3716Z NPN SILICON POWER TRANSISTOR • • • • 10 AMPERE POWER TRANSISTOR NPN SILICON Medium Speed Switiching Amplifier Excellent Safe Operating Area Total Switching Time @ 3A, 1.15|is MAXIMUM RATINGS Rating Collector-Emitter Voltage


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    PDF NES3716Z

    Untitled

    Abstract: No abstract text available
    Text: T im e s ? ^PP NES3716Z ^NEW ENGLAND SEMICONDUCTOR NPN SILICON POWER TRANSISTOR • • • • 10 AMPERE POWER TRANSISTOR NPN SILICON Medium Speed Switching Amplifier Excellent Safe Operating Area Total Switching Time @ 3A, 1.15|is MAXIMUM RATINGS Rating


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    PDF NES3716Z 3716Z