NFD410 Search Results

NFD410 Datasheets (3)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
NFD410		New England Semiconductor	N-Channel Power MOSFETs		Original	PDF
NFD410		New England Semiconductor	TRANS MOSFET N-CH 400V 20A 6SIP		Scan	PDF
NFD410		New England Semiconductor	ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFET N-CHANNEL		Scan	PDF

NFD410 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
CP666 Abstract: CP640 TO-213AA CP664 Text: FETS Page 1 of 7 Next Home Package Device Type BVDSS Volts RDS on @ 0.5 ID Ohms ID Continuous Amps IDM Pulse Drain Current Amps TO-5 NES130/5 100 0.18 8 32 25 TO-5 NES230/5 200 0.40 5.5 22 25 TO-213AA/66 NSFJ1000 1000 4.2 3.0 10 70 TO-213AA/66 NSFJ120 100	Original	PDF	O-213AA/66 CP666 CP640 TO-213AA CP664
R6095 Abstract: No abstract text available Text: Back to FETs il\M E S ^ NFD410 M W^NEW ENGLAND SEMICONDUCTOR ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFET N-CHANNEL ABSOLUTE MAXIMUM RATINGS Tc = 25°C unless otherwise noted SYMBOL PARAMETERS / TEST CONDITIONS Drain-Source Voltage Vos Gate-Source Voltage	OCR Scan	PDF	NFD410 R6095
NFD500 Abstract: NFD100 NFD200 NFD300 NFD310 NFD400 NFD410 NFD460 NFD600 NSQ6659 Text: N EW ENGLAND SEMICONDUCTOR POWER MOSFETS N CHANNEL DUAL PACKAGE 6 PIN SIP BVdss VOLTS Id AMPS RoS on @0.5 ID OHMS Qg NFD600 600 11.0 0.6 NFD500 500 14.0 NFD460 500 NFD410 DEVICE TYPE Ciss Pf Pd WATTS 105 1880 125 0.4 105 1880 125 20.0 0.25 130 2950 125 400	OCR Scan	PDF	NFD600 NFD500 NFD460 NFD410 NFD400 NFD310 NFD300 NFD200 NFD100 NSQ6659
NFD100 Abstract: NFD200 NFD300 NFD310 NFD400 NFD410 NFD460 NFD500 NFD600 NSQ6659 Text: NEW ENGLAND SEMICONDUCTOR POWER MOSFETS N CHANNEL DUAL PACKAGE 6 PIN SIP DEVICE TYPE NFD600 NFD500 NFD460 NFD410 NFD400 NFD310 NFD300 NFD200 NFD100 ^D S on BVdss VOLTS Id AMPS @0.5 ID OHMS Qg Ciss Pf Pd WATTS 600 500 500 400 400 350 350 200 100 11.0 0.6 0.4	OCR Scan	PDF	NFD600 NFD500 NFD460 NFD410 NFD400 NFD310 NFD300 NFD200 NFD100 NSQ6659
HA 1370 Abstract: NFD410 Text: NFD410 ^ M W^NEW ENGLAND SEMICONDUCTOR ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFET N-CHANNEL ABSOLUTE MAXIMUM RATINGS Tc = 25°C unless otherwise noted SYMBOL PARAMETERS / TEST CONDITIONS Drain-Source Voltage Vos Gate-Source Voltage Vas Continuous Drain Current	OCR Scan	PDF	NFD410 075R- 8-860-rain-Source HA 1370 NFD410
Untitled Abstract: No abstract text available Text: NEW ENGLAND SEMICONDUCTOR POWER MOSFETS N CHANNEL DUAL PACKAGE 6 PIN SIP Mr RdS oii @0.5 ID OHMS Qg VOLTS Id AMPS nc Ciss Pf Pd WATTS NFD600 600 11.0 0.6 105 1880 125 NFD500 500 14.0 0.4 105 1880 125 NFD460 500 20.0 0.25 130 2950 125 NFD410 400 20.0 0.2 130	OCR Scan	PDF	NFD600 NFD500 NFD460 NFD410 NFD400 NFD310 NFD300 NFD200 NFD100 NSQ6659