M08A

Abstract: MTC08
Contextual Info: General Description Features The NM93C06L/C46L/C56L/C66L devices are 256/1024/ 2048/4096 bits, respectively, of non-volatile electrically erasable memory divided into 16/64/128/256 x 16-bit registers addresses . The NM93CxxL Family functions in an extended voltage operating range, requires only a single power

Contextual Info: NM93C06L/C46L/C56L/C66L N a tio n al Semiconductor NM93C06L/C46L/C56L/C66L 256-/1024-/2048-/4096-Bit Serial EEPROM with Extended Voltage 2.7V to 5.5V (MICROWLRE Bus Interface) G eneral Description Features The NM93C06L/C46L/C56L/C66L devices are 256/1024/2048/4096 bits, respectively, of non-volatile

Contextual Info: NM93C06L/C46L/C56L/C66L 256-/1024-/2048-/4096-Bit Serial EEPROM with Extended Voltage 2.0V to 5.5V General Description The NM93C06L/ C46L/ C56L/C66L devices are 256/1024/2048/4096 bits, respectively, of non-volatile electrically erasable memory divided into 16/64/128/256 x

Contextual Info: NM93C06L/C46L/C56L/C66L National Semiconductor NM93C06L/C46L/C56L/C66L 256-/1024-/2048-/4096-Bit Serial EEPROM with Extended Voltage 2.7V to 5.5V (MICROWIRE Bus Interface) General Description Features The NM93C06L/C46L/C56L/C66L devices are 256/1024/2048/4096 bits, respectively, of non-volatile

AN716

Contextual Info: Fairchild Controlling Low Probability “False Write” Data Corruption in Serial EEPROMs Application Note 1008 S S c K S E M IC O N D U C T O R TM time period, the write operation may be incomplete, I.e. garbage will have been written. If a Vcc glitch occurs in this time period, the

0G74

Abstract: NM93C46LEN M08A MTC08 NM93C46LN NM93C66LN
Contextual Info: NM93C06L/C46L/C56L/C66L ß N a t i o n a l S e m i c o n d u c t o r NM93C06L/C46L/C56L/C66L 256-/1024-/2048-/4096-Bit Serial EEPROM with Extended Voltage (2.7V to 5.5V (MICROWIRE Bus Interface) General Description Features The NM93C06L/C46L/C56L/C66L

lp2953

Abstract: 93C46 AN-716 AN-871 NM93C46
Contextual Info: AN-1008 Controlling Low Probability “False Write” Data Corruption in Serial EEPROMs Fairchild Application Note 1008 EEPROMs are useful because they are non-volatile memories that can be updated easily and quickly in a system without being physically removed. System designers working with early

NM93C46LN

Abstract: C1995 M08A NM93C06L NM93C06LN
Contextual Info: NM93C06L C46L C56L C66L 256- 1024- 2048- 4096-Bit Serial EEPROM with Extended Voltage 2 0V t0 5 5V (MICROWIRE TM Bus Interface) General Description Features The NM93C06L C46L C56L C66L devices are 256 1024 2048 4096 bits respectively of non-volatile electrically erasable memory divided into 16 64 128 256 x

Contextual Info: Semiconductor November 1996 NM93C06L/C46L/C56L/C66L 256-/1024-/2048-/4096-Bit Serial EEPROM with Extended Voltage 2.7V to 5.5V (MICROWIRE Bus Interface) General Description Features The NM93C06L/C46L/C56L/C66L devices are 256/1024/2048/4096 bits, respectively, of non-volatile

NM93C46LN

Abstract: C1996 M08A MTC08 NM93C06L NM93C06LN
Contextual Info: NM93C06L C46L C56L C66L 256- 1024- 2048- 4096-Bit Serial EEPROM with Extended Voltage 2 7V to 5 5V (MICROWIRE TM Bus Interface) General Description Features The NM93C06L C46L C56L C66L devices are 256 1024 2048 4096 bits respectively of non-volatile electrically erasable memory divided into 16 64 128 256 x

C56L

Abstract: NM93C46LN
Contextual Info: NM93C06L/C46L/ C56L/C66L ¡53 National mm Semiconductor NM93C06L/C46L/C56L/C66L 256-/1024-/2048-/4096-Bit Serial EEPROM with Extended Voltage 2.0V to 5.5V (MICROWIRE Bus Interface) General Description Features The NM93C06L/C46L/C56L/C66L devices are 256/1024/2048/4096 bits, respectively, of non-volatile