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    NRVBA140T3G Price and Stock

    onsemi NRVBA140T3G

    DIODE SCHOTTKY 40V 1A SMA
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    DigiKey NRVBA140T3G Digi-Reel 1
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    NRVBA140T3G Cut Tape
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    NRVBA140T3G Reel
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    Avnet Americas NRVBA140T3G Reel 0 Weeks, 2 Days 770
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    Flip Electronics NRVBA140T3G 5,000
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    Win Source Electronics NRVBA140T3G 36,000
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    Flip Electronics NRVBA140T3G

    DIODE SCHOTTKY 40V 1A SMA
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    DigiKey NRVBA140T3G Reel 600
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    onsemi NRVBA140T3G-VF01

    DIODE SCHOTTKY 40V 1A SMA
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    DigiKey NRVBA140T3G-VF01 Reel
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    NRVBA140T3G Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    NRVBA140T3G On Semiconductor NRVBA140 - DIODE 1 A, 40 V, SILICON, SIGNAL DIODE, LEAD FREE, PLASTIC, CASE 403D-02, SMA, 2 PIN, Signal Diode Original PDF
    NRVBA140T3G-VF01 onsemi DIODE SCHOTTKY 40V 1A SMA Original PDF
    NRVBA140T3G-VF01 onsemi DIODE SCHOTTKY 40V 1A SMA Original PDF

    NRVBA140T3G Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: MBRA140T3G, NRVBA140T3G Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package http://onsemi.com This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay


    Original     		MBRA140T3G, NRVBA140T3G MBRA140T3/D PDF

    Untitled

    Abstract: No abstract text available
    Text: NRVBA140T3G Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay


    Original     		NRVBA140T3G NRVBA140/D PDF

    MBRA140T3G

    Abstract: No abstract text available
    Text: MBRA140T3G, NRVBA140T3G Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package http://onsemi.com This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay


    Original     		MBRA140T3G, NRVBA140T3G MBRA140T3/D MBRA140T3G PDF

    Untitled

    Abstract: No abstract text available
    Text: MBRA140T3G, NRVBA140T3G Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package http://onsemi.com This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay


    Original     		MBRA140T3G, NRVBA140T3G MBRA140T3/D PDF

    Untitled

    Abstract: No abstract text available
    Text: NRVBA140T3G Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay


    Original     		NRVBA140T3G NRVBA140/D PDF