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    NRVBA160T3G Price and Stock

    onsemi NRVBA160T3G

    DIODE SCHOTTKY 60V 1A SMA
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    DigiKey NRVBA160T3G Reel
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    NRVBA160T3G Digi-Reel 1
    • 1 $0.76
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    NRVBA160T3G Cut Tape
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    Avnet Americas NRVBA160T3G Reel 0 Weeks, 2 Days 2,500
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    Quest Components NRVBA160T3G 2,921
    • 1 $0.558
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    Avnet Silica NRVBA160T3G 143 Weeks 5,000
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    EBV Elektronik NRVBA160T3G 143 Weeks 5,000
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    Flip Electronics NRVBA160T3G 87,500
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    New Advantage Corporation NRVBA160T3G 285 1
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    Win Source Electronics NRVBA160T3G 170,200
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    FLIP ELECTRONICS NRVBA160T3G

    DIODE SCHOTTKY 60V 1A SMA
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    DigiKey NRVBA160T3G Bulk 2,500
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    onsemi NRVBA160T3G-VF01

    DIODE SCHOTTKY 60V 1A SMA
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    DigiKey NRVBA160T3G-VF01 Reel
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    Newark NRVBA160T3G-VF01 Reel 5,000
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    Avnet Silica NRVBA160T3G-VF01 143 Weeks 5,000
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    EBV Elektronik NRVBA160T3G-VF01 143 Weeks 5,000
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    Vyrian NRVBA160T3G-VF01 488
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    NRVBA160T3G Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    NRVBA160T3G On Semiconductor NRVBA160 - DIODE SIGNAL DIODE, Signal Diode Original PDF
    NRVBA160T3G-VF01 ON Semiconductor Uncategorized - Miscellaneous - SBN REC SMA 1A 60V SHTKY Original PDF

    NRVBA160T3G Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: MBRA160T3G, NRVBA160T3G Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package http://onsemi.com This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay


    Original     		MBRA160T3G, NRVBA160T3G MBRA160T3/D PDF

    MBRA160T3G

    Abstract: SMA CASE 403D-02 footprint
    Text: MBRA160T3G, NRVBA160T3G Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package http://onsemi.com This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay


    Original     		MBRA160T3G, NRVBA160T3G MBRA160T3/D MBRA160T3G SMA CASE 403D-02 footprint PDF

    Untitled

    Abstract: No abstract text available
    Text: MBRA160T3G, NRVBA160T3G Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package http://onsemi.com This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay


    Original     		MBRA160T3G, NRVBA160T3G MBRA160T3/D PDF