Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    NSP6190 Search Results

    NSP6190 Datasheets (3)

    Part
    ECAD Model
    Manufacturer
    Description
    Curated
    Datasheet Type
    PDF
    NSP6190 New England Semiconductor MEDIUM-POWER PNP SILICON TRANSISTOR Scan PDF
    NSP6190 New England Semiconductor BIPOLAR POWER TRANSISTOR Scan PDF
    NSP6190 New England Semiconductor BJT: PNP: Power Transistor: IC 5A Scan PDF

    NSP6190 Datasheets Context Search

    Catalog Datasheet
    Type
    Document Tags
    PDF

    transistor TD-100

    Abstract: transistor TD-100 le NSP6190
    Text: NSP6190 PRELIMINARY MEDIUM-POWER PNP SILICON TRANSISTORS .designed for switching and wide band amplifier applications. • • • LOW COLLECTOR-EM ITTER SATURATION VOLTAGE DC CURRENT GAIN SPECIFIED TO S AMPERES EXCELLENT SAFE OPERATING AREA M AXIMUM RATINGS*


    OCR Scan     		NSP6190 O-257AA NSP6190 40Vdc, 300ns, transistor TD-100 transistor TD-100 le PDF

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY MEDIUM-POWER PNP SILICON TRANSISTORS .designed for switching and wide band amplifier applications. • • • LOW COLLECTOR-EMITTER SATURATION VOLTAGE DC CURRENT GAIN SPECIFIED TO S AMPERES EXCELLENT SAFE OPERATING AREA MAXIMUM RATINGS* RATINGS


    OCR Scan     		NSP6190 300ns, PDF

    NSP2880

    Abstract: NSP3996 NSP3997 NSP5427 NSP5428 NSP5429 NSP5430 NSP5660 NSP5661 NSP5664
    Text: N EW ENGLAND SEMICONDUCTOR BIPOLAR POWER TRANSISTOR NPN PLANAR PACKAGE NPN TO-257 DEVICE TYPE VCEO VOLTS PEAK Ic AMPS NSP2880 70 NSP3996 V c E s a t min/max Ic @VCE A V max VOLTS Ic @ Ib A A 5.0 40-120 1.0/2.0 2.4 5.0/0.5 80 5.0 40-120 1.0/2.0 0.3 1.0/0.1


    OCR Scan     		O-257 NSP2880 NSP3996 NSP3997 NSP5660 NSP5661 NSP5664 NSP5665 NSP5427 NSP5428 NSP5429 NSP5430 PDF

    NSP2880

    Abstract: NSP3996 NSP3997 NSP5427 NSP5428 NSP5429 NSP5430 NSP5660 NSP5661 NSP5664
    Text: N EW ENGLAND SEMICONDUCTOR BIPOLAR POWER TRANSISTOR NPN PLANAR PACKAGE NPN TO-257 DEVICE TYPE VCE0 VOLTS PEAK Ic AMPS NSP2880 70 NSP3996 ^ C E sat min/max Ic @VCE A V max VOLTS Ic @ Iß A A 5.0 40-120 1.0/2.0 2.4 5.0/0.5 80 5.0 40-120 1.0/2.0 0.3 1.0/0.1


    OCR Scan     		O-257 NSP2880 NSP3996 NSP3997 NSP5660 NSP5661 NSP5664 NSP5665 NSP5427 NSP5428 NSP5429 NSP5430 PDF

    NSP5665

    Abstract: sat 1205
    Text: Bipolar Power Transistors Page 1 of 12 Next Page Home Package Device Type VCEO sus Volts IC (max) Amps PD@ 25° C Watts fT MHZ NPN TO-39 2N1479 * 40 1.5 20/60@.2/4 1.4@.2/.02 5 1.5 NPN TO-39 2N1480 * 55 1.5 20/60@.2/4 1.4@.2/.02 5 1.5 NPN TO-39 2N1481 *


    Original     		2N1479 2N1480 2N1481 2N1482 2N1483 2N1484 2N1485 2N1486 O-254 NSP6340 NSP5665 sat 1205 PDF