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    NTE298 Price and Stock

    NTE Electronics Inc NTE2987

    Trans MOSFET N-CH 100V 20A 3-Pin(3+Tab) TO-220
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Verical NTE2987 12 12
    • 1 -
    • 10 -
    • 100 $1.094
    • 1000 $1.0917
    • 10000 $1.0917
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    Arrow Electronics NTE2987 12 1
    • 1 $1.142
    • 10 $1.1187
    • 100 $1.094
    • 1000 $1.0917
    • 10000 $1.0917
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    Onlinecomponents.com NTE2987 5
    • 1 $4.28
    • 10 $3.89
    • 100 $3.39
    • 1000 $2.71
    • 10000 $2.6
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    TME NTE2987 22 1
    • 1 $3.99
    • 10 $3.17
    • 100 $2.85
    • 1000 $2.85
    • 10000 $2.85
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    NTE Electronics Inc NTE298

    Transistor, Bipolar, Pnp, 80V, 500Ma, To-92-3; Transistor Polarity:Pnp; Collector Emitter Voltage Max:80V; Continuous Collector Current:500Ma; Power Dissipation:1W; Transistor Mounting:Through Hole; No. Of Pins:3Pins; Product Range:-Rohs Compliant: Yes |Nte Electronics NTE298
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Newark NTE298 Bulk 1
    • 1 -
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    Bristol Electronics NTE298 7 2
    • 1 -
    • 10 $3
    • 100 $3
    • 1000 $3
    • 10000 $3
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    NTE298 6
    • 1 -
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    Quest Components NTE298 23
    • 1 $4.8
    • 10 $2.4
    • 100 $2.4
    • 1000 $2.4
    • 10000 $2.4
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    NTE298 5
    • 1 $4
    • 10 $3
    • 100 $3
    • 1000 $3
    • 10000 $3
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    NTE298 4
    • 1 $3.864
    • 10 $3.22
    • 100 $3.22
    • 1000 $3.22
    • 10000 $3.22
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    NTE Electronics Inc NTE2980

    Transistor, mosfet, n-Channel,60V V(Br)Dss,7.7A I(D),to-251 |Nte Electronics NTE2980
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Newark NTE2980 Bulk 1
    • 1 -
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    NTE Electronics Inc NTE2984

    Power Mosfet N-channel 60V Id=17A TO-220 Case Logic Level High Speed Switch
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com NTE2984 35
    • 1 -
    • 10 $3.06
    • 100 $2.43
    • 1000 $2.16
    • 10000 $1.99
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    Quest Components NTE2984 13
    • 1 $4.4775
    • 10 $2.2388
    • 100 $2.2388
    • 1000 $2.2388
    • 10000 $2.2388
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    TME NTE2984 19 1
    • 1 $3.21
    • 10 $2.56
    • 100 $2.3
    • 1000 $2.3
    • 10000 $2.3
    		Buy Now

    NTE Electronics Inc NTE2986

    Power Mosfet N-channel 60V Id=50A TO-220 Case Logic Level High Speed Switch
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com NTE2986 12
    • 1 -
    • 10 $5.05
    • 100 $3.96
    • 1000 $3.52
    • 10000 $3.3
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    TME NTE2986 7 1
    • 1 $5.36
    • 10 $4.26
    • 100 $3.83
    • 1000 $3.83
    • 10000 $3.83
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    Find more NTE298 price and stock on Findchips.com

    NTE298 Datasheets (10)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    NTE298 NTE Electronics Silicon Complementary Transistor Audio Amplifier, Driver Original PDF
    NTE298 NTE Electronics Bipolar Transistors Scan PDF
    NTE2980 NTE Electronics Logic Level MOSFET N-Channel, Enhancement Mode High Speed Switch Original PDF
    NTE2981 NTE Electronics Logic Level MOSFET N-Channel, Enhancement Mode High Speed Switch Original PDF
    NTE2984 NTE Electronics Logic Level MOSFET N-Channel, Enhancement Mode High Speed Switch Original PDF
    NTE2985 NTE Electronics Logic Level MOSFET N-Channel, Enhancement Mode High Speed Switch Original PDF
    NTE2986 NTE Electronics Logic Level MOSFET N-Channel, Enhancement Mode High Speed Switch Original PDF
    NTE2987 NTE Electronics Logic Level MOSFET N-Channel, Enhancement Mode High Speed Switch Original PDF
    NTE2988 NTE Electronics MOSFET N-Channel, Enhancement Mode High Speed Switch Original PDF
    NTE2989 NTE Electronics MOSFET N-Channel, Enhancement Mode High Speed Switch Original PDF

    NTE298 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    NTE2980

    Abstract: 77A DIODE
    Text: NTE2980 Logic Level MOSFET N−Channel, Enhancement Mode High Speed Switch TO251 Features: D Dynamic dv/dt Rating D Logic Level Gate Drive D RDS on Specified at VGS = 4V & 5V D Fast Switching D TO251 Type Package Absolute Maximum Ratings: Drain Current, ID


    Original     		PDF NTE2980 00A/s, NTE2980 77A DIODE

    nte297

    Abstract: NTE297MP
    Text: NTE297 NPN & NTE298 (PNP) Silicon Complementary Transistors Audio Amplifier, Driver Features: D High Collector–Emitter Voltage D Ideal for 25 – 30W Low–Frequency Output Drive Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V


    Original     		PDF NTE297 NTE298 500mA, 300mA, 100MHz NTE297MP NTE297

    NTE2981

    Abstract: No abstract text available
    Text: NTE2981 Logic Level MOSFET N–Channel, Enhancement Mode High Speed Switch Features: D Dynamic dv/dt Rating D Repetitive Avalanche rated D Logic Level Gate Drive D RDS on Specified at VGS = 4V & 5V Absolute Maximum Ratings: Drain Current, ID Continuous (VGS = 5V)


    Original     		PDF NTE2981 NTE2981

    Untitled

    Abstract: No abstract text available
    Text: NTE2980 Logic Level MOSFET N - Channel, Enhancement Mode High Speed Switch Features: D Dynamic dv/dt Rating D Logic Level Gate Drive D RDS on Specified at VGS = 4V & 5V D Fast Switching Absolute Maximum Ratings: Drain Current, ID Continuous (VGS = 5V) TC = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.7A


    Original     		PDF NTE2980

    NTE2980

    Abstract: No abstract text available
    Text: NTE2980 Logic Level MOSFET N–Channel, Enhancement Mode High Speed Switch Features: D Dynamic dv/dt Rating D Logic Level Gate Drive D RDS on Specified at VGS = 4V & 5V D Fast Switching Absolute Maximum Ratings: Drain Current, ID Continuous (VGS = 5V) TC = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.7A


    Original     		PDF NTE2980 NTE2980

    NTE2988

    Abstract: No abstract text available
    Text: NTE2988 MOSFET N–Channel, Enhancement Mode High Speed Switch Description: The NTE2988 is an N–Channel, enhancement mode, power field effect transistor in a TO52 type package designed especially for low power inverters, interface to CMOS and TTL logic, and line drivers.


    Original     		PDF NTE2988 NTE2988

    Untitled

    Abstract: No abstract text available
    Text: NTE2980 Logic Level MOSFET N-Channel, Enhancement Mode High Speed Switch Features: D Dynamic dv/dt Rating D Logic Level Gate Drive D RDS on Specified at VGS = 4V & 5V D Fast Switching Absolute Maximum Ratings: Drain Current, ID Continuous (VGS = 5V) TC = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.7A


    Original     		PDF NTE2980

    Untitled

    Abstract: No abstract text available
    Text: NTE2984 Logic Level MOSFET N–Channel, Enhancement Mode High Speed Switch Features: D Dynamic dv/dt Rating D Logic Level Gate Drive D RDS on0 Specified at VGS = 4V & 5V D +175°C Operating Temperature D Fast Switching D Ease of Paralleling D Simple Drive Requirements


    Original     		PDF NTE2984

    NTE2987

    Abstract: No abstract text available
    Text: NTE2987 Logic Level MOSFET N–Channel, Enhancement Mode High Speed Switch Features: D Avalanche Rugged Technology D Logic Level Gate Drive D RDS on = 0.09Ω Typ. at VGS = 5V D +175°C Operating Temperature D Fast Switching D Low Gate Charge D High Current Capability


    Original     		PDF NTE2987 NTE2987

    NTE2985

    Abstract: No abstract text available
    Text: NTE2985 Logic Level MOSFET N–Channel, Enhancement Mode High Speed Switch Features: D Dynamic dv/dt Rating D Logic Level Gate Drive D RDS on Specified at VGS = 4V & 5V D +175°C Operating Temperature D Fast Switching D Ease of Paralleling D Simple Drive Requirements


    Original     		PDF NTE2985 NTE2985

    NTE2986

    Abstract: No abstract text available
    Text: NTE2986 Logic Level MOSFET N–Channel, Enhancement Mode High Speed Switch Features: D Dynamic dv/dt Rating D Logic Level Gate Drive D RDS on Specified at VGS = 4V & 5V D +175°C Operating Temperature D Fast Switching D Ease of Paralleling D Simple Drive Requirements


    Original     		PDF NTE2986 NTE2986

    nte2981

    Abstract: No abstract text available
    Text: NTE2981 Logic Level MOSFET N−Channel, Enhancement Mode High Speed Switch TO251 Features: D Dynamic dv/dt Rating D Repetitive Avalanche rated D Logic Level Gate Drive D RDS on Specified at VGS = 4V & 5V D TO251 Type Package Absolute Maximum Ratings: Drain Current, ID


    Original     		PDF NTE2981 00A/s, nte2981

    Untitled

    Abstract: No abstract text available
    Text: NTE2988 MOSFET N–Channel, Enhancement Mode High Speed Switch Description: The NTE2988 is an N–Channel, enhancement mode, power field effect transistor in a TO52 type package designed especially for low power inverters, interface to CMOS and TTL logic, and line drivers.


    Original     		PDF NTE2988

    NTE2984

    Abstract: 110mJ
    Text: NTE2984 Logic Level MOSFET N–Channel, Enhancement Mode High Speed Switch Features: D Dynamic dv/dt Rating D Logic Level Gate Drive D RDS on Specified at VGS = 4V & 5V D +175°C Operating Temperature D Fast Switching D Ease of Paralleling D Simple Drive Requirements


    Original     		PDF NTE2984 NTE2984 110mJ

    Untitled

    Abstract: No abstract text available
    Text: NTE2981 Logic Level MOSFET N - Channel, Enhancement Mode High Speed Switch Features: D Dynamic dv/dt Rating D Repetitive Avalanche rated D Logic Level Gate Drive D RDS on Specified at VGS = 4V & 5V Absolute Maximum Ratings: Drain Current, ID Continuous (VGS = 5V)


    Original     		PDF NTE2981

    STk442-130

    Abstract: M56730ASP PAC011A PAC010A UPC2581 PAL005A stk413-020a upc2581v ecg semiconductors master replacement guide STRS5717
    Text: C52_pg_337~347 8/16/07 11:47 AM Page 337 Semiconductors/ Components SEMICONDUCTORS MCM has an extensive selection of SMD Surface Mount Devices which are denoted on the following page with an *(asterisk)! COUNT ON MCM TO ALWAYS PROVIDE. section 16 Semiconductors/Components


    Original     		PDF 100-up) STk442-130 M56730ASP PAC011A PAC010A UPC2581 PAL005A stk413-020a upc2581v ecg semiconductors master replacement guide STRS5717

    nte280

    Abstract: nte291
    Text: BI-POL AR TRANSISTORS NTE Type Number Polarity and Material Description and Application 275 PNP-Si 278 NPN-Si 280 NPN-Si 280MP NPN-Si PNP-Si Darlington Pwr Amp Switch Compl to NTE274 Broad Band RF Amp, CATV/MATV Amp Audio Amp Output (Compl to NTE281) Matched Pair of NTE280


    OCR Scan     		PDF 280MP NTE274) NTE281) NTE280 284MP 281MCP NTE291) 292MCP NTE292 NTE291 nte280 nte291

    NTE300

    Abstract: No abstract text available
    Text: N T E 'ELECTRONICS INC ~SBE V • m a ì a S I POPabOa WNTE T - 3 3 - oT Maximum Breakdown Voltage NTH TVpe Number Polarity and Material Description and Application 28 9 NPN-Si Audio Power Amp and Switch Comp to NTE290) Case Style Disg. No. U 83/ 40/ 9c


    OCR Scan     		PDF NTE290) NTE289 NTE300) T0202 NTE300