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    NX5311 Datasheets (5)

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    NX5311 California Eastern Laboratories 1310 nm InGaAsP MQW FP LASER DIODE IN CAN PACKAGE FOR 1.25 Gb/s AND FTTH PON APPLICATIONS Original PDF
    NX5311GH NEC Laser Diode, InGaAsP MQW-FP Laser Diode Original PDF
    NX5311GH-A NEC LASER DIODE MODULE 1352NM 10MW Original PDF
    NX5311GK NEC Laser Diode, InGaAsP MQW-FP Laser Diode Original PDF
    NX5311GK-A NEC LASER DIODE MODULE 1352NM 10MW Original PDF

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    NX5311

    Abstract: NX5311GH NX5311GK
    Text: PRELIMINARY DATA SHEET NEC’s 1310 nm InGaAsP MQW FP LASER DIODE IN CAN PACKAGE NX5311 SERIES FOR 1.25 Gb/s AND FTTH PON APPLICATIONS FEATURES • OPTICAL OUTPUT POWER: Po = 10.0 mW • LOW THRESHOLD CURRENT : Ith = 6 mA • DIFFERENTIAL EFFICIENCY: ηd =0.50 W/A


    Original     		NX5311 NX5311GH NX5311GK PDF

    NX5311

    Abstract: NX5311GH NX5311GK PX10160E
    Text: PRELIMINARY DATA SHEET LASER DIODE NX5311 Series 1 310 nm FOR 1.25 Gb/s, FTTH PON InGaAsP MQW-FP LASER DIODE DESCRIPTION The NX5311 Series is a 1 310 nm Multiple Quantum Well MQW structured Fabry-Perot (FP) laser diode with InGaAs monitor PIN-PD. These devices are designed for application up to 1.25 Gb/s.


    Original     		NX5311 NX5311GH NX5311GK PX10160E PDF

    NX5311

    Abstract: NX5311GH NX5311GK PX10160E
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original     		PDF