NX6307 Search Results

NX5304

Abstract: NX6307 NX6307GH NX6307GK NX6307SH NX6307SK STM-16 NX5501
Contextual Info: PRELIMINARY DATA SHEET LASER DIODE NX6307 Series 1 310 nm FOR 2.5 Gb/s InGaAsP MQW-DFB LASER DIODE DESCRIPTION The NX6307 Series is a 1 310 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode with InGaAs monitor PIN-PD. This NX6307S Series

Contextual Info: PRELIMINARY DATA SHEET LASER DIODE NX6307 Series 1 310 nm FOR 2.5 Gb/s InGaAsP MQW-DFB LASER DIODE DESCRIPTION The NX6307 Series is a 1 310 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode with InGaAs monitor PIN-PD. This NX6307S Series

NX6307

Abstract: NX6307GH NX6307GI NX6307GJ NX6307GK NX6307SH NX6307SI
Contextual Info: PRELIMINARY DATA SHEET NEC's 1310 nm InGaAsP MQW DFB NX6307 LASER DIODE IN CAN PACKAGE Series FOR 2.5 Gb/s APPLICATION FEATURES DESCRIPTION • OPTICAL OUTPUT POWER: PO = 7.0 mW • LOW THRESHOLD CURRENT: ITH = 10 mA @ TC = 25°C • HIGH SPEED: tr = 0.2 ns MAX

NX6307

Abstract: NX6307GH NX6307GK NX6307SH NX6307SK STM-16 NX63067H NX63067K
Contextual Info: PRELIMINARY DATASHEET NEC's 1310 nm InGaAsP MQW DFB LASER DIODE IN CAN PACKAGE NX6307 SERIES FOR 2.5 Gb/s APPLICATIONS DESCRIPTION NEC's NX6307 Series is a 1 310 nm Multiple Quantum Well NX6307S Series MQW structured Distributed Feed-Back (DFB) laser diode

NX5501

Abstract: NX5304 NX5306 NX5307 NX5504 NX6306 NX6307 NX6508 STM-16
Contextual Info: PRELIMINARY DATA SHEET LASER DIODE NX6508 Series 1 470 TO 1 610 nm FOR 2.5 Gb/s, CWDM InGaAsP MQW-DFB LASER DIODE DESCRIPTION The NX6508 Series is a 1 470 to 1 610 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode with InGaAs monitor PINPD. These devices are ideal for 2.5 Gb/s CWDM application.

NX5304

Abstract: NX5306 NX5306EH NX5306EK NX5307 NX5501 NX5504 NX6306 STM-16
Contextual Info: DATA SHEET LASER DIODE NX5306 Series 1 310 nm FOR 156 Mb/s, 622 Mb/s, 1.25 Gb/s, InGaAsP MQW-FP LASER DIODE DESCRIPTION The NX5306 Series is a 1 310 nm Multiple Quantum Well MQW structured Fabry-Perot (FP) laser diodes with InGaAs monitor PIN-PD. These devices are ideal for Gigabit Ethernet and Synchronous Digital Hierarchy

NX6504SH

Abstract: NX6504SK NX5304 NX5306 NX6504 NX6504GH NX6504GK
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

Contextual Info: PRELIMINARY DATA SHEET LASER DIODE NX5504 Series 1 550 nm FOR FTTH, 156 Mb/s, 622 Mb/s InGaAsP MQW-FP LASER DIODE DESCRIPTION The NX5504 Series is a 1 550 nm Multiple Quantum Well MQW structured Fabry-Perot (FP) laser diodes with InGaAs monitor PIN-PD. These

NX5304

Abstract: NX5306 NX6306 NX6306GH NX6306GK NX6306SH NX6306SK inGaAs
Contextual Info: PRELIMINARY DATA SHEET LASER DIODE NX6306 Series 1 310 nm FOR 156 Mb/s, 622 Mb/s, 1.25 Gb/s InGaAsP MQW-DFB LASER DIODE DESCRIPTION The NX6306 Series is a 1 310 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode with InGaAs monitor

NX5501

Abstract: NX5304 NX5306 NX5306EH NX5306EK NX5307 NX5504 NX6306 STM-16
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

Contextual Info: PRELIMINARY DATA SHEET LASER DIODE NX6306 Series 1 310 nm FOR 156 Mb/s, 622 Mb/s InGaAsP MQW-DFB LASER DIODE DESCRIPTION The NX6306 Series is a 1 310 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode with InGaAs monitor PIN-PD. This

NX5501

Abstract: NX5304 NX5306 NX5307 NX5504 NX6306 NX6307 NX6508 STM-16 nec. 5.5 473
Contextual Info: PRELIMINARY DATA SHEET LASER DIODE NX6508 Series 1 470 TO 1 610 nm FOR 2.5 Gb/s, CWDM InGaAsP MQW-DFB LASER DIODE DESCRIPTION The NX6508 Series are 1 470 to 1 610 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode with InGaAs monitor PINPD. These devices are ideal for 2.5 Gb/s CWDM application.

NX5501

Abstract: NX5304 NX5306 NX5307 NX5307EH NX5307EK NX5504 STM-16
Contextual Info: DATA SHEET LASER DIODE NX5307 Series 1 310 nm FOR INTRA-OFFICE 2.5 Gb/s InGaAsP MQW-FP LASER DIODE DESCRIPTION The NX5307 Series is a 1 310 nm Multiple Quantum Well MQW structured Fabry-Perot (FP) laser diodes with InGaAs monitor PIN-PD. These devices are ideal for Synchronous Digital Hierarchy (SDH) system, intra-office

NX5501

Abstract: NX5304 NX5306 NX5307 NX6509 NX6509GH NX6509GK STM-16
Contextual Info: PRELIMINARY DATA SHEET LASER DIODE NX6509 Series 1 550 nm FOR 2.5 Gb/s InGaAsP MQW-DFB LASER DIODE DESCRIPTION The NX6509 Series is a 1 550 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode with InGaAs monitor PINPD. These devices are designed for 2.5 Gb/s: STM-16 (L-16.2) application and

Contextual Info: DATA SHEET LASER DIODE NX6504 Series 1 550 nm FOR 156 Mb/s, 622 Mb/s InGaAsP MQW-DFB LASER DIODE DESCRIPTION The NX6504 Series is a 1 550 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode with InGaAs monitor PIN-PD. This NX6504S Series

Contextual Info: PRELIMINARY DATA SHEET LASER DIODE NX6306 Series 1 310 nm FOR 156 Mb/s, 622 Mb/s InGaAsP MQW-DFB LASER DIODE DESCRIPTION The NX6306 Series is a 1 310 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode with InGaAs monitor PIN-PD. This

10G EML TOSA

Abstract: TOSA 10G DFB EML TOSA 25g 10G APD ROSA TOSA 10G EML laser DFB 1550nm 10mW NEC TOSA 10G 10g tosa EML 25g EML TOSA TOSA 1310 10G
Contextual Info: NEC Fiber Optic Components January 2004 With over 100 years’ experience in communications technology, few companies can match NEC for strength and stability. The company’s manufacturing facilities are the most advanced in the world and their products are widely

NX5501

Abstract: NX5304 NX5304EH NX5304EK NX5306 NX5307 NX5504 NX6306 STM-16
Contextual Info: PRELIMINARY DATA SHEET LASER DIODE NX5304 Series 1 310 nm FOR 156 Mb/s, 622 Mb/s, 1.25 Gb/s InGaAsP MQW-FP LASER DIODE DESCRIPTION The NX5304 Series is a 1 310 nm Multiple Quantum Well MQW structured Fabry-Perot (FP) laser diodes with InGaAs monitor PIN-PD. These

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

NX5304

Abstract: NX5304EH NX5304EK NX5306 NX5307 NX5501 NX5504 NX6306 STM-16 Laser diode Fabry-Perot
Contextual Info: DATA SHEET LASER DIODE NX5304 Series 1 310 nm FOR 156 Mb/s, 622 Mb/s, 1.25 Gb/s InGaAsP MQW-FP LASER DIODE DESCRIPTION The NX5304 Series is a 1 310 nm Multiple Quantum Well MQW structured Fabry-Perot (FP) laser diodes with InGaAs monitor PIN-PD. These devices are designed for 156 Mb/s: STM-1 (I-1, S-1.1, L-1.1), 622 Mb/s: STM4 (I-4, S-4.1), Gigabit Ethernet application and ideal for Synchronous Digital

NX5501

Abstract: NX5304 NX5306 NX5307 NX5504 NX5504EH NX5504EK NX6306 STM-16
Contextual Info: PRELIMINARY DATA SHEET LASER DIODE NX5504 Series 1 550 nm FOR FTTH InGaAsP MQW-FP LASER DIODE DESCRIPTION The NX5504 Series is a 1 550 nm Multiple Quantum Well MQW structured Fabry-Perot (FP) laser diodes with InGaAs monitor PIN-PD. These devices are designed and ideal for Fiber To The Home (FTTH).

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

nec. 5.5 473

Contextual Info: PRELIMINARY DATA SHEET LASER DIODE NX6508 Series 1 470 TO 1 610 nm FOR 2.5 Gb/s, CWDM InGaAsP MQW-DFB LASER DIODE DESCRIPTION The NX6508 Series is a 1 470 to 1 610 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode with InGaAs monitor PINPD. These devices are ideal for 2.5 Gb/s CWDM application.

NX5304

Abstract: NX6307 NX6307GH NX6307GK NX6307SH NX6307SK STM-16 NX5501
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid