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    NX7661JB Search Results

    NX7661JB Datasheets (7)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    NX7661JB California Eastern Laboratories InGaAsP STRAINED MQW DC-PBH PULSED LASER DIODE MODULE FOR 1625 nm OTDR APPLICATION Original PDF
    NX7661JB NEC Original PDF
    NX7661JB NEC Fiber Optic Components Original PDF
    NX7661JB-BA California Eastern Laboratories InGaAsP STRAINED MQW DC-PBH PULSED LASER DIODE MODULE FOR 1625 nm OTDR APPLICATION Original PDF
    NX7661JB-BC California Eastern Laboratories 1625 Nm Ingaasp Mqw Fp Pulsed Laser Diode In Dip Package For Otdr Application (120 Mw Min) Original PDF
    NX7661JB-BC NEC 1625 nm InGaAsP MQW FP pulsed laser diode for OTDR application (120 mW min). With FC-PC connector. Original PDF
    NX7661JB-BC-AZ California Eastern Laboratories NECs 1625 nm InGaAsP MQW FP PULSED LASER DIODE IN DIP PACKAGE FOR OTDR APPLICATION (120 mW MIN) Original PDF

    NX7661JB Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    nec laser diode OTDR

    Abstract: NX7661JB-BC NX7661JB-BC-AZ
    Text: NEC's 1625 nm InGaAsP MQW FP NX7661JB-BC PULSED LASER DIODE IN DIP PACKAGE FOR OTDR APPLICATION 120 mW MIN FEATURES DESCRIPTION • HIGH OUTPUT POWER: Pf = 120 mW MIN at IFP = 1000 mA, Pulse width (PW) = 10 ms, Duty = 1% NEC's NX7661JB-BC is a 1625 nm developed strained Multiple Quantum Well (st-MQW) structure pulse laser diode DIP


    Original     		PDF NX7661JB-BC NX7661JB-BC nec laser diode OTDR NX7661JB-BC-AZ

    NX7661JB-BC

    Abstract: No abstract text available
    Text: NEC's 1625 nm InGaAsP MQW FP NX7661JB-BC PULSED LASER DIODE IN DIP PACKAGE FOR OTDR APPLICATION 120 mW MIN FEATURES DESCRIPTION • HIGH OUTPUT POWER: Pf = 120 mW MIN at IFP = 1000 mA, Pulse width (PW) = 10 ms, Duty = 1% NEC's NX7661JB-BC is a 1625 nm developed strained Multiple Quantum Well (st-MQW) structure pulse laser diode DIP


    Original     		PDF NX7661JB-BC NX7661JB-BC

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET InGaAsP STRAINED MQW DC-PBH PULSED LASER DIODE MODULE FOR 1625 nm OTDR APPLICATION NX7661JB FEATURES DESCRIPTION • HIGH OUTPUT POWER: Pf = 120 mW MIN at IFP = 1000 mA, Pulse width PW = 10 ms, Duty = 1% The NX7661JB is a 1625 nm developed strained Multiple


    Original     		PDF NX7661JB NX7661JB

    otdr

    Abstract: NX7327BF-AA NX7328BF-AA NX7329BB-AA NX7361JB-BC NX7526BF-AA NX7527BF-AA NX7661JB-BC
    Text: DATA SHEET LASER DIODE NX7661JB-BC InGaAsP MQW DC-PBH PULSED LASER DIODE MODULE 1 625 nm OTDR APPLICATION DESCRIPTION The NX7661JB-BC is a 1 625 nm Multiple Quantum Well MQW structure pulsed laser diode DIP module with single mode fiber and internal thermoelectric cooler.


    Original     		PDF NX7661JB-BC NX7661JB-BC 14-pin otdr NX7327BF-AA NX7328BF-AA NX7329BB-AA NX7361JB-BC NX7526BF-AA NX7527BF-AA

    thermistor 102

    Abstract: NX7561JB NX7661JB NX7661JB-BA
    Text: PRELIMINARY DATA SHEET InGaAsP STRAINED MQW DC-PBH PULSED LASER DIODE MODULE FOR 1625 nm OTDR APPLICATION NX7661JB FEATURES DESCRIPTION • HIGH OUTPUT POWER: Pf = 120 mW MIN at IFP = 1000 mA, Pulse width PW = 10 ms, Duty = 1% The NX7661JB is a 1625 nm developed strained Multiple


    Original     		PDF NX7661JB NX7661JB thermistor 102 NX7561JB NX7661JB-BA

    310 thermistor

    Abstract: COAXIAL AUDIO ic nec laser diode OTDR NDL7103 NDL7113 NDL7153 NDL7163 NDL7503P NDL7513P NX7661JB
    Text: PRELIMINARY DATA SHEET LASER DIODE NX7661JB InGaAsP STRAINED MQW DC-PBH PULSED LASER DIODE MODULE 1 625 nm OTDR APPLICATION DESCRIPTION The NX7661JB is a 1 625 nm newly developed Strained Multiple Quantum Well St-MQW structure pulsed laser diode DIP module with single mode fiber and internal thermoelectric cooler. It is designed for light sources of optical


    Original     		PDF NX7661JB NX7661JB 14-pin 310 thermistor COAXIAL AUDIO ic nec laser diode OTDR NDL7103 NDL7113 NDL7153 NDL7163 NDL7503P NDL7513P

    2SK2500

    Abstract: 2SK1543 UPD16861GS NEC 2SK2500 upa1559h transistor NEC 2SK2500 2sc4496a mc10087f1 2SA733A UPD16861
    Text: NEC Electronics Corporation Product Information for China RoHS Semiconductor Devices 1/708 Feb. 24, 2010 NEC Electronics discloses information on contained substances subject to regulation of its semiconductor devices, evaluation boards, and development tools. NEC Electronics understands that customers are required to disclose


    Original     		PDF

    otdr

    Abstract: NX7327BF-AA NX7328BF-AA NX7329BB-AA NX7361JB-BC NX7526BF-AA NX7527BF-AA NX7561JB-BC 81 110 thermistor
    Text: DATA SHEET LASER DIODE NX7561JB-BC InGaAsP MQW DC-PBH PULSED LASER DIODE MODULE 1 550 nm OTDR APPLICATION DESCRIPTION The NX7561JB-BC is a 1 550 nm Multiple Quantum Well MQW structure pulsed laser diode DIP module with single mode fiber and internal thermoelectric cooler.


    Original     		PDF NX7561JB-BC NX7561JB-BC 14-pin otdr NX7327BF-AA NX7328BF-AA NX7329BB-AA NX7361JB-BC NX7526BF-AA NX7527BF-AA 81 110 thermistor

    Untitled

    Abstract: No abstract text available
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original     		PDF

    310 thermistor

    Abstract: k 2545 NX7327BF-AA NX7328BF-AA NX7329BB-AA NX7361JB-BC NX7526BF-AA NX7527BF-AA NX7528BF-AA OTDR
    Text: DATA SHEET LASER DIODE NX7361JB-BC InGaAsP MQW DC-PBH PULSED LASER DIODE MODULE 1 310 nm OTDR APPLICATION DESCRIPTION The NX7361JB-BC is a 1 310 nm Multiple Quantum Well MQW structure pulsed laser diode DIP module with single mode fiber and internal thermoelectric cooler.


    Original     		PDF NX7361JB-BC NX7361JB-BC 14-pin 310 thermistor k 2545 NX7327BF-AA NX7328BF-AA NX7329BB-AA NX7526BF-AA NX7527BF-AA NX7528BF-AA OTDR

    10G EML TOSA

    Abstract: TOSA 10G DFB EML TOSA 25g 10G APD ROSA TOSA 10G EML laser DFB 1550nm 10mW NEC TOSA 10G 10g tosa EML 25g EML TOSA TOSA 1310 10G
    Text: NEC Fiber Optic Components January 2004 With over 100 years’ experience in communications technology, few companies can match NEC for strength and stability. The company’s manufacturing facilities are the most advanced in the world and their products are widely


    Original     		PDF acros88-2247 04/2M 10G EML TOSA TOSA 10G DFB EML TOSA 25g 10G APD ROSA TOSA 10G EML laser DFB 1550nm 10mW NEC TOSA 10G 10g tosa EML 25g EML TOSA TOSA 1310 10G