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    NX8349TS-AZ Renesas Electronics Corporation 310 nm AlGaInAs MQW-DFB Laser Diode for 10 Gb/s Application Visit Renesas Electronics Corporation

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    NX8349

    Abstract: PX10160E 10 gb laser diode NX8349TS
    Text: Preliminary Data Sheet NX8349TS,NX8349YK,NX8349XK LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION R08DS0002EJ0100 Rev.1.00 Jul 26, 2010 DESCRIPTION The NX8349TS, NX8349YK, NX8349XK are 1 310 nm Multiple Quantum Wells MQW structured Distributed


    Original     		PDF NX8349TS NX8349YK NX8349XK R08DS0002EJ0100 NX8349TS, NX8349YK, NX8349XK R08DS0002EJ0100 00nesas NX8349 PX10160E 10 gb laser diode

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    Abstract: No abstract text available
    Text: Preliminary Data Sheet NX8349TS LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION R08DS0002EJ0200 Rev.2.00 Dec 13, 2013 DESCRIPTION <R> The NX8349TS is 1 310 nm Multiple Quantum Wells MQW structured Distributed Feed-Back (DFB) laser diode


    Original     		PDF NX8349TS R08DS0002EJ0200 NX8349TS