OP265W

Abstract: OP505W
Contextual Info: 0 . OPTEK Product Bulletin OP265W June 1996 GaAlAs Plastic Infrared Emitting Diode Type OP265W IBB WËÈlÊÉÊmmlÊÈËÊSêSk i l W Ê ^m tB Ê K sm H N ta i III Features • W ide irradiance pattern • Mechanically and spectrally matched to the OP505W

T35 diode

Abstract: ndm diode diode L2.70 OP165W OP505W diode T35 diode T35 -4-D6
Contextual Info: 0 .OPTEK Product Bulletin O P 165W Jun e 1996 GaAs Plastic Infrared Emitting Diode Type OP165W • Wide irradiance pattern • Mechanically and spectrally matched to the OP505W • Small package size for space limited applications • T-1 package style Reverse Voltage. 2.0 V

Contextual Info: @ QFTEK Product Bulletin OP505W June 1996 NPN Silicon Phototransistor Type OP505W Features • Wide receiving angle • T-1 package style • Small package size for space limited applications Coilector-Emitter Voltage. 30 V

Contextual Info: . O PTEK Product Bulletin OP165W June 1996 GaAs Plastic Infrared Emitting Diode Type OP165W Features Absolute Maximum Ratings Ta = 25° C unless otherwise noted • W ide irradiance pattern • Mechanically and spectrally matched to the OP505W • Small package size for space limited

OP505W

Contextual Info: OPTEK Product Bulletin OP505W June 1996 NPN Silicon Phototransistor Type OP505W Wide receiving angle T-1 package style Small package size for space limited applications Collector-Emitter Voltage. 30 V

Contextual Info: •I b 7 T fl5 flD DGücltil3 OPTEK Qhh Product Bulletin OP505W June 1996 NPN Silicon Phototransistor Type OP5Q5W Features Description Collector-Em itter V o lta g e . 30 V

OP165W

Abstract: OP505W IB 115
Contextual Info: @.OPIEK •i bv^asao □□□2bL3 abb Product Bulletin O P505W June 1996 NPN Silicon Phototransistor Type OP5Q5W Features A b so lute M axim um R atings T a = 25° C unless otherw ise noted • Wide receiving angle • T-1 package style • Small package size for space limited

Contextual Info: @ .O P IE K Product Bulletin OP265W June 1996 G aA lA s Plastic Infrared Emitting Diode Type OP265W • Wide irradiance pattern • Mechanically and spectrally matched to the O P505W • Small package size for space limited applications • T-1 package style

Contextual Info: Reflective Object Sensor OPB706A, OPB706B, OPB706C OPB707A, OPB707B, OPB707C Features: • Choice of Phototransistor OPB706 or Photodarlington (OPB707) output Product Photo Here • Unfocused for sensing diffuse surface • Low cost plastic housing • Designed for use with PCBoards or connectors

OP265W

Abstract: OP505W
Contextual Info: @ . OPTEK Product Bulletin OP265W June 1996 GaAlAs Plastic Infrared Emitting Diode Type OP265W •125 3.18 .115 (2.92)" ANODE - .050 (1.27)NOM . 165 (4.19) .145 (3.68) .125 (3.18) .115 (2.92) .025 (0.64) .015 (0.38) .030 (0.76)NOM .500 (12.70)MIN FOR IDENTIFICATION PURPOSES. ANODE LEAD IS

30076

Contextual Info: @ .O Q E K Product Bulletin OP165W June 1996 GaAs Plastic Infrared Emitting Diode Type OP165W •125 3.18 .115 (2.92)" ^11 . .165 (4.19) ' .145 (3.68) .050 (1.27)-. s .125 (3.18) .115 (2.92) □ □ .025 (0.64) .015 (0.38) . 0 30^0.76)— ■» » . 5 0 0 (12.70) —

OP165W

Abstract: OP505W
Contextual Info: OPTEK Product Bulletin OP165W June 1996 GaAs Plastic Infrared Emitting Diode Type OP165W .125 3.18 .115 (2.92) ANQDE .165 (4.19) .145 (3.68) .050 (1.27)NQM .125 (3.18) .115 (2.92) CATHODE .025 (0.64) .015 (0.38) .030 (0.76)NOM .500 ( 12.70) — MIN • FOR IDENTIFICATION PURPOSES. ANODE LEAD IS

OPB960N55

Abstract: marking code ny SMD Transistor npn OPB840L51 Package TO-78 E23 SMD Transistor A1 MEXICO TRANSMISSIVE SENSOR OPB840L55 OPB365T55 OPB875N51 OPB970N51
Contextual Info: OPTEK products are in applications that are a part of your everyday life. We can be found in automobiles, office equipment, vending machines, banks, hospitals, home security, architectural lighting, industrial plants, military and aerospace applications and even at sports games or

OPB706B

Abstract: OPB706A photo darlington sensor REFLECTIVE OBJECT SENSOR transistor 935 E-152 OPB707B phototransistor 3 pin phototransistor sensor OPB706C
Contextual Info: Reflective Object Sensor OPB706A, OPB706B, OPB706C OPB707A, OPB707B, OPB707C Features: • Choice of Phototransistor OPB706 or Photodarlington (OPB707) output Product Photo Here • Unfocused for sensing diffuse surface • Low cost plastic housing • Designed for use with PCBoards or connectors

Contextual Info: Reflective Object Sensor OPB710, OPB710F, OPB730, OPB730F F-Package Features: • • • • • Choice of phototransistor or photodarlington output Unfocused for sensing diffuse surface Mounted on standard TO-72 header Available in clear encapsulating epoxy OPB710, OPB730

KT853

Abstract: OPB915S10 OH90U OPI1265 K9000 OP269SLB OP269SLC sla 9030 K8102 opi3250
Contextual Info: S7E D 'PTEK TECHNOLOGY INC PART NUMBER REPLACED BY REPLACES • bTTflSflQ OOOllbS 0 PART NUMBER PAGE REPLACED BY REPLACES ■ PAGE *>|J M / I t '“0 ^ 1N SERIES NO CHANGE a 6N140ATXV NEU 2N SERIES NO CHANGE * CLVA SERIES NO CHANGE 3N243 3N244 3N245 NO CHANGE

KT853

Abstract: KT853A OH90U KT826 K8702 KT850B KT8150 KT851A KR8803 kt853a2
Contextual Info: >PTEK TECHNOLOGY S7E IN C D • b7TA 5ôü O O O l l b a □ PAGE PART NUMBER REPLACED BY NO CHANGE it 6N140ATXV NEU 2N SERIES NO CHANGE * CLVA SERIES NO CHANGE 3N243 3N244 3N245 NO CHANGE NO CHANGE NO CHANGE 12-4 12-4 12-4 CNY17/Î CNY17/2 CNY17/3 CNY17/4

transistor 935

Abstract: REFLECTIVE OBJECT SENSOR OPB710F opb710 VISIBLE LIGHT PHOTOdarlington TRANSISTOR dc current sensor OP165W OP505W OPB730 OPB730F
Contextual Info: Reflective Object Sensor OPB710, OPB710F, OPB730, OPB730F F-Package Features: • • • • • Choice of phototransistor or photodarlington output Unfocused for sensing diffuse surface Mounted on standard TO-72 header Available in clear encapsulating epoxy OPB710, OPB730

OPB706A

Abstract: transistor 935
Contextual Info: Reflective Object Sensor OPB706A, OPB706B, OPB706C OPB707A, OPB707B, OPB707C Features: • Choice of Phototransistor OPB706 or Photodarlington (OPB707) output Product Photo Here • Unfocused for sensing diffuse surface • Low cost plastic housing • Designed for use with PCBoards or connectors

KT853

Abstract: KT850 KT853A LTR-305D H0A0872-n55 H0A1405-1 h0a2001 MOC70T3 HOA708-1 smd diode 825B
Contextual Info: Cross Reference Competition Honeywell P/N P/N 100 H 0A0871-N55 50B2-4204 CALL PHOTODIODES, T 0 1 8 T A LL PIN 101 HOA1872-12 BC TR AN S A S S Y . PTX 5082-4205 CALL PHOTODIODES. P P PIN 10501 H 0A 1872-1 BC TRAN S A S S Y , PTX 5082-4207 CALL PHOTODIODES. T 0 1 8 T A LL PIN

Contextual Info: 0 . O PTEK Product Bulletin OP165W April 1993 GaAs Plastic Infrared Emitting Diode Type OP165W DIMENSIONS ARE IN INCHES (MILLIMETERS * FOR IDENTIFICATION PURPOSES, ANODE LEAD IS .060 (1.52) NOM. LONGER THAN CATHODE LEAD. Features Absolute Maximum Ratings (T a = 25°C unless otherwise noted)

Contextual Info: Reflective Object Sensor OPB710, OPB710F, OPB730, OPB730F F-Package Features: • • • • • Choice of phototransistor or photodarlington output Unfocused for sensing diffuse surface Mounted on standard TO-72 header Available in clear encapsulating epoxy OPB710, OPB730