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    Abstract: No abstract text available
    Text: Silicon Photo Transistor OPB0606 1. Structure 1.1 Chip Size : 0.61mm X 0.61mm 1.2 Chip thickness : 280 20um 1.3 Metallization : Top - Al, Bottom - Au 1.4 Passivation : Silicon Nitride 1.5 Bonding Pad Size - Emitter : 155um X 155um - Base : 90um X 90um 2. Guaranteed Probed Electrical Characteristics


    Original     		PDF OPB0606 155um 155um 500uA RL-1000

    OPB0606

    Abstract: transistor c 839
    Text: Silicon Photo Transistor OPB0606 1. Structure 1.1 Chip Size : 0.61mm X 0.61mm 1.2 Chip thickness : 280±20um 1.3 Metallization : Top - Al, Bottom - Au 1.4 Passivation : Silicon Nitride 1.5 Bonding Pad Size - Emitter : 155um X 155um - Base : 90um X 90um 2. Guaranteed Probed Electrical Characteristics


    Original     		PDF OPB0606 155um 155um 500uA RL-1000 OPB0606 transistor c 839