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    ir10 diode

    Abstract: OPD2020 839 DIODE
    Text: OPD2020 Silicon PIN Photo Diode HIGH SPEED SENSITIVITY unit : ㎛ 1. Structure 1.1 Chip Size : 2.00mm X 2.00mm 1.2 Chip thickness : 400±20um 1.3 Metallization : Top - Al, Bottom - Au 1.4 Passivation : Silicon Oxide 1.5 Bonding Pad Size - Anode top : 170um X 170um


    Original     		OPD2020 170um 170um 000Lux ir10 diode OPD2020 839 DIODE PDF

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    Abstract: No abstract text available
    Text: OPD2020 Silicon PIN Photo Diode HIGH SPEED SENSITIVITY 1. Structure 1.1 Chip Size : 2.00mm X 2.00mm 1.2 Chip thickness : 400 20um 1.3 Metallization : Top - Al, Bottom - Au 1.4 Passivation : Silicon Oxide 1.5 Bonding Pad Size - Anode top : 170um X 170um 1.6 Active Area : 1.72mm X 1.72mm


    Original     		OPD2020 170um 170um 000Lux PDF