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    Abstract: No abstract text available
    Text: N AUER PHILIPS/DISCRETE ObE D PowerMOS transistor • bb53ci31 Oai45b3 4 ■ ” BUZ50B T'Sl' H May 1987 GENERAL DESCRIPTION N-channel enchancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies


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    bb53c Oai45b3 BUZ50B Q0145b7 T-39-11 bbS3T31 00145bfl PDF