Contextual Info: P4C164L LOW POWER 8K x 8 STATIC CMOS RAM FEATURES Common Data I/O Three-State Outputs Fully TTL Compatible Inputs and Outputs Advanced CMOS Technology Automatic Power Down Packages —28-Pin 300 and 600 mil DIP —28-Pin 450 mil SOP VCC Current Commercial/Industrial

Contextual Info: P4C164 ULTRA HIGH SPEED 8K x 8 STATIC CMOS RAMS FEATURES Data Retention with 2.0V Supply, 10 A Typical Current P4C164L Military Full CMOS, 6T Cell High Speed (Equal Access and Cycle Times) – 8/10/12/15/20/25/35/70/100 ns (Commercial) – 10/12/15/20/25/35/70/100 ns(Industrial)

Contextual Info: P4C164 REVISIONS DOCUMENT NUMBER: DOCUMENT TITLE: SRAM115 P4C164 ULTRA HIGH SPEED 8K x 8 STATIC CMOS RAMS REV. ISSUE DATE ORIG. OF CHANGE OR 1997 DAB New Data Sheet A Oct-05 JDB Change logo to Pyramid B Jun-06 JDB Added 28-pin ceramic DIP C Aug-06 JDB Added Lead Free Designation

Contextual Info: P4C164 ULTRA HIGH SPEED 8K x 8 STATIC CMOS RAMS FEATURES Data Retention with 2.0V Supply, 10 A Typical Current P4C164L Military Full CMOS, 6T Cell High Speed (Equal Access and Cycle Times) – 8/10/12/15/20/25/35/70/100 ns (Commercial) – 10/12/15/20/25/35/70/100 ns(Industrial)

Contextual Info: PERFORMANCE SEMICONDUCTOR EOE D • 70L25T7 0D0QS71 S P4C164/P4C164L ULTRA HIGH SPEED 8K x 8 STATIC CM O S RAM S SCRAMS FEATURES ■ Full CMOS, 6T Cell Single 5V±10% Power Supply ■ High Speed (Equal Access and Cycle Times) -15/17/20/25/30/35 ns (Commercial)

100DM

Abstract: 1519B P4C164 P4C164L
Contextual Info: P4C164 ULTRA HIGH SPEED 8K x 8 STATIC CMOS RAMS FEATURES Full CMOS, 6T Cell Common Data I/O High Speed Equal Access and Cycle Times – 8/10/12/15/20/25/35/70/100 ns (Commercial) – 10/12/15/20/25/35/70/100 ns(Industrial) – 12/15/20/25/35/45/70/100 ns (Military)

C1992

Abstract: P4C164 P4C164L
Contextual Info: PERFORMANCE S EMI CONDUCTOR SGE ]> • 70b2ST7 0001620 f l 'î a * P S C P4C164/P4C164L ULTRA HIGH SPEED 8K x 8 STATIC CMOS RAMS SCRAMS FEATURES ■ Full CMOS, 6T Cell Single 5V±10% Power Supply ■ High Speed (Equal Access and Cycle Times) -12/15/20/25 ns (Commercial)

30PF

Abstract: P4C164 P4C164L
Contextual Info: P4C164/P4C164L ULTRA HIGH SPEED 8K x 8 STATIC CMOS RAMS SCRAMS F a r n e ll COMPONENTS - FEATURES • Single 5 V ± 1 0 % P ow er S u p p ly Full C M O S , 6 7 Cell Data R e te n tio n w ith 2.0V S u p p ly , 10 C urren t (P 4 C 1 6 4 L M ilitary)

Contextual Info: P4C164 ULTRA HIGH SPEED 8K x 8 STATIC CMOS RAMS FEATURES Full CMOS, 6T Cell Common Data I/O High Speed Equal Access and Cycle Times – 8/10/12/15/20/25/35/70/100 ns (Commercial) – 10/12/15/20/25/35/70/100 ns(Industrial) – 12/15/20/25/35/45/70/100 ns (Military)

Contextual Info: P4C164/P4C164L ULTRA HIGH SPEED 8K x 8 STATIC CMOS RAMS FEATURES Full CMOS, 6T Cell Single 5V±10% Power Supply High Speed Equal Access and Cycle Times – 8/10/12/15/20/25/35/70/100 ns (Commercial) – 10/12/15/20/25/35/70/100 ns(Industrial) – 12/15/20/25/35/45 ns (Military)

Contextual Info: P4C164LL VERY LOW POWER 8Kx8 STATIC CMOS RAM FEATURES VCC Current Commercial/Industrial — Operating: 55 mA — CMOS Standby: 3 µA Access Times —80/100 (Commercial or Industrial) —90/120 (Military) Single 5 Volts ±10% Power Supply Easy Memory Expansion Using CE1, CE2 and OE

P4C164

Abstract: P4C164L
Contextual Info: P4C164 ULTRA HIGH SPEED 8K X 8 STATIC CMOS RAMS FEATURES Full CMOS, 6T Cell Common Data I/O High Speed Equal Access and Cycle Times – 8/10/12/15/20/25/35/70/100 ns (Commercial) – 10/12/15/20/25/35/70/100 ns(Industrial) – 12/15/20/25/35/45/70/100 ns (Military)

1519B

Abstract: P4C164 P4C164L
Contextual Info: P4C164/P4C164L ULTRA HIGH SPEED 8K x 8 STATIC CMOS RAMS FEATURES Full CMOS, 6T Cell Single 5V±10% Power Supply High Speed Equal Access and Cycle Times – 8/10/12/15/20/25/35/70/100 ns (Commercial) – 10/12/15/20/25/35/70/100 ns(Industrial) – 12/15/20/25/35/45 ns (Military)

Contextual Info: P4C164/P4C164L ULTRA HIGH SPEED 8K x 8 STATIC CMOS RAMS SCRAMS FEATURES • Full CMOS, 6T Cell Single 5V±10% Power Supply ■ High Speed (Equal Access and Cycle Times) -12/15/20/25 ns (Commercial) - 20/25/35/45 ns (Military) Data Retention with 2.0V Supply, 10 |iA Typical

1519B

Abstract: 1519C P4C164 P4C164L
Contextual Info: P4C164/164L P4C164/P4C164L ULTRA HIGH SPEED 8K x 8 STATIC CMOS RAMS FEATURES Full CMOS, 6T Cell Output Enable and Dual Chip Enable Control Functions High Speed Equal Access and Cycle Times – 8/10/12/15/20/25 ns (Commercial) – 10/12/15/20/25/35 (Industrial)

Contextual Info: P4C164/P4C164L ULTRA HIGH SPEED 8K x 8 STATIC CMOS RAMS a - FEATURES • Full CMOS, 6T Cell ■ Output Enable and Dual Chip Enable Control Functions ■ High Speed Equal Access and Cycle Times

P4C164L

Contextual Info: P4C164L LOW POWER 8K x 8 STATIC CMOS RAM FEATURES Common Data I/O Three-State Outputs Fully TTL Compatible Inputs and Outputs Advanced CMOS Technology Automatic Power Down Packages —28-Pin 300 and 600 mil DIP —28-Pin 330 mil SOP VCC Current Commercial/Industrial

Contextual Info: P4C164LL VERY LOW POWER 8KX8 STATIC CMOS RAM FEATURES VCC Current Commercial/Industrial — Operating: 55 mA — CMOS Standby: 3 µA Access Times —80/100 (Commercial or Industrial) —90/120 (Military) Single 5 Volts ±10% Power Supply Easy Memory Expansion Using CE1, CE2 and OE

Contextual Info: P4C164 ULTRA HIGH SPEED 8K x 8 STATIC CMOS RAMS FEATURES Full CMOS, 6T Cell Common Data I/O High Speed Equal Access and Cycle Times – 8/10/12/15/20/25/35/70/100 ns (Commercial) – 10/12/15/20/25/35/70/100 ns(Industrial) – 12/15/20/25/35/45/70/100 ns (Military)

Contextual Info: P4C164L LOW POWER 8K x 8 STATIC CMOS RAM FEATURES Common Data I/O Three-State Outputs Fully TTL Compatible Inputs and Outputs Advanced CMOS Technology Automatic Power Down Packages —28-Pin 300 and 600 mil DIP —28-Pin 450 mil SOP VCC Current Commercial/Industrial

Contextual Info: P4C164 ULTRA HIGH SPEED 8K x 8 STATIC CMOS RAMS FEATURES Full CMOS, 6T Cell Common Data I/O High Speed Equal Access and Cycle Times – 8/10/12/15/20/25/35/70/100 ns (Commercial) – 10/12/15/20/25/35/70/100 ns(Industrial) – 12/15/20/25/35/45/70/100 ns (Military)

166Q

Abstract: P4C164 P4C164L
Contextual Info: P4C164/P4C164L ULTRA HIGH SPEED 8K x 8 STATIC CMOS RAMS 7$ - FEATURES • Full CMOS, 6T Cell ■ Output Enable and Dual Chip Enable Control

P4C164LL

Contextual Info: P4C164LL VERY LOW POWER 8Kx8 STATIC CMOS RAM FEATURES VCC Current Commercial/Industrial — Operating: 55 mA — CMOS Standby: 3 µA Access Times —80/100 (Commercial or Industrial) —90/120 (Military) Single 5 Volts ±10% Power Supply Easy Memory Expansion Using CE1, CE2 and OE

Contextual Info: P4C164 ULTRA HIGH SPEED 8K x 8 STATIC CMOS RAMS FEATURES Data Retention with 2.0V Supply, 10 µA Typical Current P4C164L Military Full CMOS, 6T Cell High Speed (Equal Access and Cycle Times) – 8/10/12/15/20/25/35/70/100 ns (Commercial) – 10/12/15/20/25/35/70/100 ns(Industrial)