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D82AL2 Abstract: d82 diode IRFD1Z0 Text: [FigMiíMÍCDS FUT FIELD EFFECT POWER TRANSISTOR IRFD1Z0,1Z1 P82AL2.K2 0.5 AMPERES 100, 60 VOLTS RPS ON = 2.4 n This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE’s advanced Power DMOS technology to achieve low on-resistance with excellent device rugged	OCR Scan	PDF	D82AL2 00A/jus, d82 diode IRFD1Z0

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D82AL2

Abstract: d82 diode IRFD1Z0
Text: [FigMiíMÍCDS FUT FIELD EFFECT POWER TRANSISTOR IRFD1Z0,1Z1 P82AL2.K2 0.5 AMPERES 100, 60 VOLTS RPS ON = 2.4 n This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE’s advanced Power DMOS technology to achieve low on-resistance with excellent device rugged

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D82AL2 00A/jus, d82 diode IRFD1Z0