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    PA2561T1H Search Results

    PA2561T1H Result Highlights (2)

    Part ECAD Model Manufacturer Description Download Buy
    UPA2561T1H-T1-AT Renesas Electronics Corporation N-Channel Mos Field Effect Transistor For Switching Visit Renesas Electronics Corporation
    UPA2561T1H-T2-AT Renesas Electronics Corporation N-Channel Mos Field Effect Transistor For Switching Visit Renesas Electronics Corporation
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    PA2561T1H Price and Stock

    Rochester Electronics LLC UPA2561T1H-T1-AT

    MOSFET 2N-CH 20V 4.5A 8VSOF
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey UPA2561T1H-T1-AT Bulk 738
    • 1 -
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    • 100 -
    • 1000 $0.41
    • 10000 $0.41
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    Renesas Electronics Corporation UPA2561T1H-T1-AT

    Power Field-Effect Transistor, 4.5A, 20V, N-Channel MOSFET '
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Rochester Electronics UPA2561T1H-T1-AT 12,000 1
    • 1 $0.3911
    • 10 $0.3911
    • 100 $0.3676
    • 1000 $0.3324
    • 10000 $0.3324
    		Buy Now

    PA2561T1H Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Data Sheet PA2561T1H R07DS0006EJ0100 Rev.1.00 Jul 08, 2010 MOS FIELD EFFECT TRANSISTOR Description The μ PA2561 is Dual N-channel MOSFETs designed for back light inverters and power management applications of portable equipments. Dual N-channel MOSFETs are assembled in one package, to contribute minimize the equipments.


    Original     		PDF PA2561T1H R07DS0006EJ0100 PA2561

    s11ms1

    Abstract: PA256
    Text: Preliminary Data Sheet PA2561T1H R07DS0006EJ0100 Rev.1.00 Jul 08, 2010 MOS FIELD EFFECT TRANSISTOR Description The μ PA2561 is Dual N-channel MOSFETs designed for back light inverters and power management applications of portable equipments. Dual N-channel MOSFETs are assembled in one package, to contribute minimize the equipments.


    Original     		PDF PA2561T1H R07DS0006EJ0100 PA2561 s11ms1 PA256