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    F 0552

    Abstract: PA862T
    Text: NPN SILICON RF TWIN TRANSISTOR PA862TD NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN LEAD-LESS MINIMOLD FEATURES • Low voltage operation • 2 different built-in transistors (2SC5435, 2SC5800) Q1: Built-in high gain transistor fT = 12.0 GHz TYP., S21e2 = 8.5 dB TYP. @ VCE = 3 V, IC = 10 mA, f = 2 GHz


    Original     		PA862TD 2SC5435, 2SC5800) S21e2 2SC5435 2SC5800 P15685EJ1V0DS F 0552 PA862T PDF