LA80P
Abstract: marking 80L
Text: b427525 0042407 Tbb « N E C E MOS INTEGRATED CIRCUIT ju P D 4 2 S 1 6 1 8 0 L , 4 2 S 1 7 1 8 0 L , 4 2 S 1 8 1 8 0 L 16 M BIT D Y N A M IC RAM 3 .3 V FAST PAGE M O DE & BYTE R E A D /W R IT E M O DE -PRELIMINARY-DESCRIPTION The NEC ^PD42S16180L, u PD42S17180L and n PD42S18170L are 1 048 576 words by 18 b its
|
OCR Scan
|
b427525
uPD42S16180L
uPD42S17180L
uPD42S18170L
475mil)
P32VF-100-475A
P32VF-100-475A
LA80P
marking 80L
|
PDF
|
D4242
Abstract: IC 741 cn
Text: b 4 E 7 5 2 S DOMEMOS T 2 D B i N E C E MOS INTEGRATED C IR CU IT / ¡P D 4 2 S 1 6 1 7 0 L ,4 2 S 1 7 1 7 0 L ,4 2 S 1 8 1 7 0 L 16 M BIT D Y N A M IC RAM 3 .3 V FAST PAGE M O D E & BYTE W R ITE M O DE P R E LIM IN A R Y -DESCRIPTIO N The NEC u PD42S16170L, u PD42S17170L and
|
OCR Scan
|
uPD42S16170L
uPD42S17170L
uPD42S18170L
b427525
004EbBL>
475mil)
P32VF-100-475A
P32VF-100-475A
D4242
IC 741 cn
|
PDF
|
g0424
Abstract: transistor B42 350
Text: bM2752S 00’ 23bb 35Ü H N E C E / / M OS IN TEG RA TED C IR C U IT JU P D 42S 16 1 7 0 ,4 2 S 1 7 1 7 0 ,4 2 S 1 8 1 7 0 16 M B IT D Y N A M IC RAM (FA S T PA G E M O D E & B Y T E W R IT E M ODE -PRELIMINARY-DESCRIPTIO N The NEC #PD42S16170, // PD42S17170 and ¿¿PD42S18170 are 1 048 576 words by 16 bits dynamic
|
OCR Scan
|
bM2752S
uPD42S16170
uPD42S17170
uPD42S18170
475mil)
P32VF-100-475A
P32VF-100-475A
g0424
transistor B42 350
|
PDF
|