4464 ram

Abstract: D4464 D446 D446* RAM pd446 UPD446
Contextual Info: SEC ¿/PD4464 8 ,1 9 2 x 8 -B IT S T A T IC CMOS RAM NEC Electronics Inc. D e sc rip tio n P in C o n fig u r a t io n The*/PD4464 is a h ig h -sp e e d 8.192-w ord by 8-bit static R A M fabricated with advanced silicon -ga te technology. Full C M O S storage ce lls w ith six transistors m ake the

PD75116

Abstract: NEC 75116 IC-7529B PD7228 uPD75112 uPD75108 uPD75116 uPD75P116 75108CW dot matrix printer schematic diagram
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

UPD41258G10

Abstract: UPD41254 upd41256l
Contextual Info: NEC N E C ELECTRONICS INC 72C D • b427525 DDObMMl 3 ■ SURFACE MOUNT DEVICES Introduction M em ory Surface mount technology SMT is an idea whose time has come. NEC anticipated the current trend and now offers an exceptionally broad choice of com­ ponents in suface mount packages. Four factors

LU1PA

Abstract: d4464 PD4464 pd446 d 4464 ud44
Contextual Info: MEC //P D 44 64 8,192 X 8-B IT STATIC CMOS RAM NEC Electronics Inc. Description Pin Configuration The/PD4464 is a high-speed 8,192-word by 8-b it static RAM fabricated with advanced siiicon-gate technology. Full C M O S storage cells with six transistors make the

PD446C

Abstract: PD446 d446c HPD446C PD446G-45 HPD446C-2 JPD446C-1 1317I PD446C cmos UPD446
Contextual Info: PD446 2,048 X 8-BIT STATIC CM OS RAM NEC NEC Electronics Inc. Revision 3 D e sc rip tio n Pin C o n fig u ra tio n T h e ;j P D 4 4 6 is a h ig h -s p e e d , lo w -po w er, 2 04 8 -w o rd by 8b it s ta tic C M O S R A M fa b ric a te d w ith a d v a n c e d s ilic o n ­

MB8416A-15

Abstract: 8410A 8416a MB8416A-12 MB8416A-12U15L
Contextual Info: F U JIT S U MOS Memories m M B 8 4 1 6 A -1 2 , M B 8416A -12L , M B 8 4 16 A -1 5, M B 8410A -15L CM O S 16,384-Bit Static Random Access Memory Description The Fujitsu MB8416A is a 2048-word by 8-bit static random ac­ cess memory fabricated with CMOS silicon gate process. The

NEC d446c

Abstract: d446c-2 d446c PD446C d446c-2 RAM PD446C-3 D446* nec D446* RAM MPD446C-3 pd446
Contextual Info: SEC NEC Electronics Inc. ¿¿PD446 2 ,0 4 8 X 8-B IT STATIC CMOS RAM Revision 3 Description Pin Configuration The ¿¿PD446 is a high-speed, low-power, 2048-word by 8bit static CMOS RAM fabricated with advanced silicongate CMOS technology. A unique circuitry technique

pd446

Abstract: PD7228 uPD75108F uPD75116 uPD75116F uPD75P116 IC-2810B
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

D446C

Abstract: D446 PD446C mPD446 446C D446G UPD446 upd446 nec UPD446G45 UPD446G-45
Contextual Info: NEC PD446 2 ,0 4 8 X 8-BIT STATIC CMOS RAM NEC Electronics Inc. Revision 3 Description Pin Configuration Th e PD446 is a high-speed, low-power, 2048-word by 8bit static C M O S RAM fabricated w ith advanced silicong ate C M O S technology. A unique circuitry technique

NVR2

Abstract: pd446
Contextual Info: GREENWICH 2K x 8 NON-VOLATILE RAM INSTRUMENTS LTD • • • • • • NVR2 Plug-in replacement for Static RAM chips Retains data for up to 10 years No erasure required Functions as Data or Program RAM No limit to number of programming cycles Fits standard 24-pin socket

ram 8416

Contextual Info: FAST A C C E S S - 2K x 8 NON-VOLATILE RAM • • • • • • • GR281-4 Plug-in replacement for Static RAM 10 years data retention No erasure required Fast power down Functions as Data or Program RAM No limit to number of programing cycles Standard 24-pin JEDEC pinout

B8416

Abstract: MB8416-20L MB8416
Contextual Info: F U JIT S U MB8416-20 MB8416-20L M IC R O E L E C T R O N IC S . IN C. CMOS 16384-BIT STATIC RANDOM ACCESS MEMORY ^ ¿4 Í 4 L C £- DESCRIPTION The Fujitsu M B8416 is a 2048 word by 8-bit static random ac­ cess m em ory fabricated w ith high density, high reliability Com ple­

PD75108

Abstract: DC MOTOR HL-1 75p116 PD7228 PD6323 75P116GF dot matrix printer circuit diagram datasheet pd446 177Fh PD75104A
Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µPD75104, 75106, 75108 4-BIT SINGLE-CHIP MICROCOMPUTER DESCRIPTION µPD75108 is a 4-bit single-chip microcomputer integrating timer/event counters, serial interface, and vector interrupt function, in addition to a CPU, ROM, RAM, and I/O ports, on a single chip. Operating at high speeds,

GR281

Abstract: 2716 eprom 4016 RAM 2716 eprom datasheet memory 2716 eprom 2716 pd446 static ram 4802 2716 2k eprom retention memory ram 6116
Contextual Info: GR281 2K x 8 NON-VOLATILE RAM GR281 (2K x 8) NON-VOLATILE RAM Symbol Vdd Vi/o Temp DESCRIPTION The GR281 is a 2048 word by 8 bits (2K x 8) nonvolatile CMOS Static Ram, fabricated from advanced silicon gate CMOS technology and a high reliability lithium power cell.

PTH02

Abstract: fmem NEC 75116 application note 6332 prom 75116GF hl wire cutting system IC-7529B P1233 uPD75116 uPD75108
Contextual Info: µPD75112, 75116 4-Bit Single-Chip Microcomputer Data Sheet Description The µPD75116 is one of the 4-bit single-chip microcomputer 75X series. The µPD75116 is a product with the extended ROM capacity of the µPD75108. In addition of high-speed operations,

Contextual Info: RPR 2K x 8 NON-VOLATILE RAM MsmumnsusA • • • • • • • • • GR281 Has instant power circuit, does not require voltage slew Plug-in replacement for Static RAM chips Retains data for up to 10 years No erasure required Functions as Data or Proram RAM

D4464

Abstract: 4464 ram d446 PD4464 D446* nec diagram rice lights LTGe pd446 d4464ac PD44
Contextual Info: SEC /¿PD 4464 8 ,1 9 2 x 8 - B IT S T A T IC CM O S RAM NEC Electronics Inc. Description Pin Configuration PD4464 is a high-speed 8.192-word by 8-bit static RAM fabricated with advanced silicon-gate technology. Full CMOS storage cells with six transistors make the

MM3218

Contextual Info: EBHNWICH INSTRUMENTS LTD * Plug-in replacement for Static R A M * 10 years data retention * N o erasure required * Fast power down * Functions as Data o r Program R A M * N o limit to number of programming cycles * Standard 24-pin J E D E C pinout G R 2 81 is 2 kilobyte of non-volatile m em ory w hich is

75p116

Abstract: PD7228 uPD75108cw uPD75108GF uPD75104 uPD75106 uPD75108 uPD75P108B IEM-922 uPD751XX
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

gr281

Abstract: static ram 4802 pd446 4016 RAM
Contextual Info: GREENWICH INSTRUMENTS USA • Plug-in replacement for Static RAM • 10 years data retention • No erasure required • Fast power down • Functions as Data or Program RAM • No limit to number of programming cycles • Standard 24-pin JEDEC pinout GR281 is 2 kilobyte of non-volatile memory which is pin-compatible

Contextual Info: apR FAST ACCESS - 2K x 8 NON-VOLATILE RAM • • • • • • • GR281-4 Plug-in replacement for Static RAM 10 years data retention No erasure required Fast power down Functions as Data or Program RAM No limit to number of programing cycles Standard 24-pin JEDEC pinout

IEM-922

Abstract: PD7228 IEM922 8224B uPD75108F uPD75116 uPD75116F uPD75P116 UPD284 hl wire cutting system
Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µPD75108F,75112F,75116F 4-BIT SINGLE-CHIP MICROCOMPUTER DESCRIPTION The µPD75116F offers high-speed operation tCY = 1.91 µ s at a low supply voltage (VDD = 2.7 V) which is not possible with the µPD75116. It has the same functions as, and is pin compatible with, the µPD75116, allowing low voltage sets to be developed

Contextual Info: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT PD44646092, 44646182, 44646362, 44646093, 44646183, 44646363 72M-BIT DDR II+ SRAM 2.0 & 2.5 Cycle Read Latency 2-WORD BURST OPERATION Description The μPD44646092 and μPD44646093 are 8,388,608-word by 9-bit, the μPD44646182 and μPD44646183 are

MB8416-20L

Abstract: MB8416-20 TC5517 MB8416 HM6116 PD446
Contextual Info: F U J IELECTRO T S U NICS INC. _ M ICRO CMOS 16384-BIT STATIC RANDOM ACCESS MEMORY MB8416-20 MB8416-20L DESCRIPTION T h e F u jits u M B 8 4 1 6 is a 2048 w o rd b y 8 -b it s ta t ic ra n d o m a c ­ c e s s m e m o ry fa b ric a te d w ith h ig h d e n s ity , h ig h re lia b ility C o m p le ­