NEC JAPAN
Abstract: UPD4584 uPD4564163G5 NEC 1010 uPD4564841G5 electric scheme ca 400 w NEC JAPAN IC
Text: CORPORATION JAPAN July 2000 TRQ-00-07-339 64M SDRAM RELIABILITY REPORT This report contains reliability data on the following CMOS Synchronous DRAM products fabricated and assembled at the NEC facilities in Japan . µ PD4564441G5 Rev. “L“ µ PD4564841G5 Rev. “L”
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TRQ-00-07-339
PD4564441G5
PD4564841G5
PD4564163G5
Am241,
NEC JAPAN
UPD4584
uPD4564163G5
NEC 1010
uPD4564841G5
electric scheme ca 400 w
NEC JAPAN IC
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MC-4516CC726
Abstract: MC-4516CC726F-A10 MC-4516CC726F-A80
Text: DATA SHEET MOS INTEGRATED CIRCUIT MC-4516CC726 16M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE Description The MC-4516CC726 is a 16,777,216 words by 72 bits synchronous dynamic RAM module on which 18 pieces of 64M SDRAM : µPD4564841 Rev. E are assembled.
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MC-4516CC726
16M-WORD
72-BIT
MC-4516CC726
PD4564841
MC-4516CC726F-A10
MC-4516CC726F-A80
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MC-4516CD646-A10
Abstract: MC-4516CD646 MC-4516CD646F-A10 MC-4516CD646F-A80 a1046H
Text: DATA SHEET MOS INTEGRATED CIRCUIT MC-4516CD646 16M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE Description The MC-4516CD646 is a 16,777,216 words by 64 bits synchronous dynamic RAM module on which 16 pieces of 64M SDRAM : µPD4564841 Revision E are assembled.
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MC-4516CD646
16M-WORD
64-BIT
MC-4516CD646
PD4564841
MC-4516CD646-A10
MC-4516CD646F-A10
MC-4516CD646F-A80
a1046H
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PD23C64020
Abstract: PD45D128442 4M84 PD45D128842 256M5 0443 IC PD23C64000AL 45V16A PD264 A80L
Text: IC Memory CD-ROM IC Memory CD-ROM X13769XJ2V0CD00 04-1 IC Memory Dynamic RAM • Synchronous DRAM: SDR Single Data Rate , 256M bits (x4 bits organization) Density (bits) Organization (words × bits × banks) Part number 256M★ 16M×4×4 µ PD45256441 Speed
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X13769XJ2V0CD00
A10BL
8K/64
256M5
PD45256441
54-pin
PC133
PC100
MC-22000
PD23C64020
PD45D128442
4M84
PD45D128842
0443 IC
PD23C64000AL
45V16A
PD264
A80L
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET NEC / MOS INTEGRATED CIRCUIT MC-4516CC724 16M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE Description The MC-4516CC724 is a 16,777,216 words by 72 bits synchronous dynamic RAM module on which 18 pieces of 64 M SDRAM : ¿/PD4564841 are assembled.
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MC-4516CC724
16M-WORD
72-BIT
MC-4516CC724
uPD4564841
MC-4516
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET NEC / MOS INTEGRATED CIRCUIT MC-458CB64S 8 M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE SO DIMM Description The MC-458CB64S is a 8,388,608 words by 64 bits synchronous dynamic RAM module(Small Outline DIMM) on which 8 faeces of 64 M SDRAM : //PD4564841 are assembled.
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MC-458CB64S
64-BIT
MC-458CB64S
uPD4564841
MC-458CB64support
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET NEC / MOS INTEGRATED CIRCUIT MC-458CA724 8M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE Description The MC-458CA724 is a 8,388,608 words by 72 bits synchronous dynamic RAM module on which 9 pieces of 64 M S D R A M : //PD4564841 are assembled.
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MC-458CA724
72-BIT
MC-458CA724
uPD4564841
0i002
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MC-4516CD645FA-A1
Abstract: No abstract text available
Text: DATA SHEET_ MOS INTEGRATED CIRCUIT MC-4516CD645 16M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE Description The MC-4516CD645 is a 16,777,216 words by 64 bits synchronous dynamic RAM module on which 16 pieces of
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MC-4516CD645
16M-WORD
64-BIT
MC-4516CD645
uPD4564841
MC-4516CD645-A1
MC-4516CD645FA-A1
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cma 10005
Abstract: wn 5461 C458C MC-458CB644
Text: DATA SHEET_ MOS INTEGRATED CIRCUIT MC-458CB644 8M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE Description The MC-458CB644 is a 8,388,608 words by 64 bits synchronous dynamic RAM module on which 8 pieces of 64M
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MC-458CB644
64-BIT
MC-458CB644
uPD4564841
C-458C
B644-A10
B644-A12
cma 10005
wn 5461
C458C
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a1001h
Abstract: C458D
Text: DATA SHEET_ MOS INTEGRATED CIRCUIT MC-458DA724 8M-W ORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE BUFFERED TYPE Description The MC-458DA724 is a 8,388,608 words by 72 bits synchronous dynamic RAM module on which 9 pieces of 64M SDRAM : /¿PD4564841 are assembled.
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MC-458DA724
72-BIT
MC-458DA724
uPD4564841
C-458DA724-A80
C-458D
A724-A10
a1001h
C458D
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Untitled
Abstract: No abstract text available
Text: DATA SHEET_ MOS INTEGRATED CIRCUIT MC-4516CC725 16M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE Description The MC-4516CC725 is a 16,777,216 words by 72 bits synchronous dynamic RAM module on which 18 pieces of
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MC-4516CC725
16M-WORD
72-BIT
MC-4516CC725
uPD4564841
MC-4516CC725-A1
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Untitled
Abstract: No abstract text available
Text: DATA S H EE T_ MOS INTEGRATED CIRCUIT MC-458CA725 8M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE Description The MC-458CA725 is an 8,388,608 words by 72 bits synchronous dynamic RAM module on which 9 pieces of 64M
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MC-458CA725
72-BIT
MC-458CA725
uPD4564841
M168S-50A89
M13298EJ3V0DS00
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Untitled
Abstract: No abstract text available
Text: DATA SHEET MOS INTEGRATED CIRCUIT ju P D 4 5 6 4 4 4 1 ,4 5 6 4 8 4 1 , 4 5 6 4 1 6 3 64 M-bit Synchronous DRAM 4-bank, LVTTL Description The ,uPD4564441, 4564841, 4564163 are high-speed 67,108,864-bit synchronous dynam ic random-access memories, organized as 4,194,304x4x4, 2,097,152x8x4, 1,048,576x16x4 word x bit x bank , respectively.
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uPD4564441
864-bit
304x4x4,
152x8x4,
576x16x4
54-pin
S54G5-80-9JF
PD4564441
PD4564xxx.
pPD4564xxxG5
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Untitled
Abstract: No abstract text available
Text: DATA SHEET_ MOS INTEGRATED CIRCUIT MC-4516CC725 16M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE Description The MC-4516CC725 is a 16,777,216 words by 72 bits synchronous dynamic RAM module on which 18 pieces of
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MC-4516CC725
16M-WORD
72-BIT
MC-4516CC725
uPD4564841
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Untitled
Abstract: No abstract text available
Text: DATA SHEET_ MOS INTEGRATED CIRCUIT MC-458CA725 8M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE Description The MC-458CA725 is an 8,388,608 words by 72 bits synchronous dynamic RAM module on which 9 pieces of 64M
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MC-458CA725
72-BIT
MC-458CA725
uPD4564841
M168S-50A89
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Untitled
Abstract: No abstract text available
Text: DATA SH EE T_ MOS INTEGRATED CIRCUIT MC-4516CC726 16M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE Description The MC-4516CC726 is a 16,777,216 words by 72 bits synchronous dynamic RAM module on which 18 pieces of
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MC-4516CC726
16M-WORD
72-BIT
MC-4516CC726
uPD4564841
M13348X)
M168S-50A77
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Untitled
Abstract: No abstract text available
Text: DATA SHEET_ MOS INTEGRATED CIRCUIT MC-458CA727 8M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE ★ Description The MC-458CA727LF is a 8,388,608 words by 72 bits synchronous dynamic RAM module on which 9 pieces of 64M
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MC-458CA727
72-BIT
MC-458CA727LF
uPD4564841
C-458CA727EFA
uPD45128163
M14278EJ2V0DS00
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET_ NEC MOS INTEGRATED CIRCUIT MC-4516DC72 16M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE BUFFERED TYPE Description The MC-4516DC72 is a 16,777,216 words by 72 bits synchronous dynam ic RAM module on which 18 pieces of
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MC-4516DC72
16M-WORD
72-BIT
MC-4516DC72
uPD4564841
200S-50A1
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Untitled
Abstract: No abstract text available
Text: DATA SHEET_ MOS INTEGRATED CIRCUIT MC-458CB646 8M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE Description The MC-458CB646 is a 8,388,608 words by 64 bits synchronous dynamic RAM module on which 8 pieces of 64M
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MC-458CB646
64-BIT
MC-458CB646
uPD4564841
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Untitled
Abstract: No abstract text available
Text: DATA SHEET_ MOS INTEGRATED CIRCUIT MC-4516CD645 16M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE Description The MC-4516CD645 is a 16,777,216 words by 64 bits synchronous dynamic RAM module on which 16 pieces of
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MC-4516CD645
16M-WORD
64-BIT
MC-4516CD645
uPD4564841
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d4564841
Abstract: No abstract text available
Text: DATA SHEET NEC MOS INTEGRATED CIRCUIT ;iP D 4 5 6 4 4 4 1 , 4 5 6 4 8 4 1 , 4 5 6 4 1 6 3 64M-bit Synchronous DRAM 4-bank, LVTTL Description The ,uPD4564441, 4564841, 4564163 are high-speed 67,108,864-bit synchronous dynamic random-access memories, organized as 4,194,304 x 4 x 4, 2,097,152 x 8 x 4, 1,048,576 x16 x 4 word x bit x bank , respectively.
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64M-bit
uPD4564441
864-bit
54-pin
d4564841
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Untitled
Abstract: No abstract text available
Text: DATA S H EE T_ MOS INTEGRATED CIRCUIT MC-4516CC726 16M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE Description The MC-4516CC726 is a 16,777,216 words by 72 bits synchronous dynamic RAM module on which 18 pieces of
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MC-4516CC726
16M-WORD
72-BIT
MC-4516CC726
uPD4564841
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D4564841
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET NEC MOS INTEGRATED CIRCUIT MC-458DA72 8M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE BUFFERED TYPE D escription The M C -458D A 72 is a 8,388,608 w ords by 72 bits synchrono us dyna m ic RAM m odule on w hich 9 pieces of 64 M SD R A M : ^P D 4 564841 are assem bled.
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MC-458DA72
72-BIT
-458D
MC-458DA72-A10
MC-458DA72-A1
D4564841
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c458c
Abstract: C-458C MC-458CB64SA-A1OBL pd4564841
Text: DATA SHEET / MOS INTEGRATED CIRCUIT MC-458CB64SA, 458CB64LSA 8M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE SO DIMM Description The MC-458CB64SA and MC-458CB64LAS are a 8,388,608 words by 64 bits synchronous dynamic RAM module (Small Outline DIMM) on which 8 pieces of 64M SDRAM : ^¡PD4564841 are assembled.
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MC-458CB64SA,
458CB64LSA
64-BIT
MC-458CB64SA
MC-458CB64LAS
PD4564841
-458CB64SA-A80
M12263EJ8V0DS00
c458c
C-458C
MC-458CB64SA-A1OBL
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