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    PN108CL Search Results

    PN108CL Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    PN108CL Panasonic Silicon NPN Phototransistor Original PDF
    PN108CL Unknown The Optical Devices Data Book (Japanese) Scan PDF
    PN108CL Panasonic Si NPN phototransistor for optical control systems. Scan PDF
    PN108CL Panasonic Photo Detectors / Photo Couplers Scan PDF
    PN108CL Panasonic Silicon NPN Phototransistor Scan PDF

    PN108CL Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: Phototransistors PNZ108CL PN108CL Silicon planar type Unit: mm 3.0±0.3 For optical control systems 0.2±0.05 12.7 min. • High sensitivity: ICE(L) = 3.5 mA (min.) • Wide directivity characteristics for easy use • Fast response: tr = 5 µs (typ.) • Signal mixing capability using base pin


    Original
    PDF PNZ108CL PN108CL)

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Phototransistors PNZ108CL (PN108CL) Silicon planar type Unit: mm 3.0±0.3 For optical control systems 0.2±0.05 12.7 min. • High sensitivity: ICE(L) = 3.5 mA (min.) • Wide directivity characteristics for easy use


    Original
    PDF 2002/95/EC) PNZ108CL PN108CL)

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Phototransistors PNZ108CL (PN108CL) Silicon planar type Unit: mm 3-φ0.43±0.05 M Di ain sc te on na tin nc ue e/ d 12.7 min. • High sensitivity: ICE(L) = 3.5 mA (min.) • Wide directivity characteristics for easy use


    Original
    PDF 2002/95/EC) PNZ108CL PN108CL)

    pnz108cl

    Abstract: PN108CL K50010
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Phototransistors PNZ108CL (PN108CL) Silicon planar type For optical control systems • Features  High sensitivity: IL = 3.5 mA (min.)  Narrow directivity characteristics for effective use of light input


    Original
    PDF 2002/95/EC) PNZ108CL PN108CL) pnz108cl PN108CL K50010

    PN108CL

    Abstract: PNZ108CL LX208
    Text: Phototransistors PNZ108CL PN108CL Silicon planar type Unit: mm 12.7 min. • High sensitivity: ICE(L) = 3.5 mA (min.) • Wide directivity characteristics for easy use • Fast response: tr = 5 µs (typ.) • Signal mixing capability using base pin • Small size (low in height) package


    Original
    PDF PNZ108CL PN108CL) PN108CL PNZ108CL LX208

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Phototransistors PNZ108CL (PN108CL) Silicon planar type Unit: mm 12.7 min. • High sensitivity: ICE(L) = 3.5 mA (min.) • Wide directivity characteristics for easy use • Fast response: tr = 5 µs (typ.)


    Original
    PDF 2002/95/EC) PNZ108CL PN108CL)

    pnz108cl

    Abstract: PN108CL
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Phototransistors PNZ108CL (PN108CL) Silicon planar type For optical control systems • Features ue pl d in ea an c se ed lud pl vi an m m es si tf ed ain ai fo ol t n l ht low disc dis ena ten low


    Original
    PDF 2002/95/EC) PNZ108CL PN108CL) pnz108cl PN108CL

    PN108CL

    Abstract: PNZ108CL
    Text: Phototransistors PNZ108CL PN108CL Silicon NPN Phototransistor Unit : mm 3.0±0.3 For optical control systems 12.7 min. 2.0±0.1 0.2±0.05 Features High sensitivity : ICE(L) = 3.5 mA (min.) (at L = 500 lx) Wide directional sensitivity for easy use 3-ø0.45±0.05


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    PDF PNZ108CL PN108CL) PN108CL PNZ108CL

    MIP2F3

    Abstract: MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent
    Text: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety „ This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the


    Original
    PDF PAMP13-N1 MIP2F3 MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent

    MN1873287

    Abstract: an6512n 2sk3190 MN171202 mn158413 mn15142 mn187164 mn6740 AN7210 MN15283
    Text: Maintenance and Discontinued Types <Maintenance Types> Maintenance and Discontinued Types This product is not dealt with anymore. Customers dealing with this product conventionally may contact our sales division in the case of ambiguity. <Discontinued Types>


    Original
    PDF MN101C01C MN15224 MN101C01D MN15226 MN101C027 MN15261 MN101C03A MN101C38A MN15263 MN101C06D MN1873287 an6512n 2sk3190 MN171202 mn158413 mn15142 mn187164 mn6740 AN7210 MN15283

    mip411

    Abstract: MIP2F4 MIP2F3 AN12947a mip2f2 MIP2F20MS MIP2F40MS mip2e7dmy panasonic inverter dv 700 manual mip291
    Text: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety „ This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the


    Original
    PDF PAMP13-N1 mip411 MIP2F4 MIP2F3 AN12947a mip2f2 MIP2F20MS MIP2F40MS mip2e7dmy panasonic inverter dv 700 manual mip291

    PNZ335

    Abstract: PN126S PNA1801 PNA1801L LNA1401L cd pick up PNA4602M visible photodetector PNZ334 PN300F
    Text: Characteristics List • Photodetector 11 Photodetector ■ PIN Photodiode Absolute Maximum Ratings VR V PD (mW) ID VR max. VR (V) (nA) (V) 30 10 50 Part No. PNA3W01L (PN307) Electro • Optical Characteristics Ta = 25°C IL λP L min. typ. VR (lx) (µA) (nm) (V)


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    PDF PNA3W01L PN307) PNZ313 PN313) PNZ300F PN300F) PNZ313B PN313B) PNZ323 PN323) PNZ335 PN126S PNA1801 PNA1801L LNA1401L cd pick up PNA4602M visible photodetector PNZ334 PN300F

    lu110

    Abstract: PN108CL
    Text: Panasonic Phototransistors PN108CL Silicon NPN Phototransistor U nit : mm For optical control systems • Features • H ig h se n sitiv ity : I C e l = 3-5 m A (m in .) (at L = 5 0 0 lx ) . 3 -00.45+ 0.05 • W id e d irection al se n sitiv ity for e a sy u se


    OCR Scan
    PDF PN108CL 2856K lu110 PN108CL

    Untitled

    Abstract: No abstract text available
    Text: Panasonic Phototransistors PN108CL Silicon NPN Phototransistor Unit : mm For optical control systems • Features • H ig h sensitivity : I Ce l = 3-5 m A (m in.) (at L = 500 lx) • W ide directio n al sen sitiv ity for easy use • F a st re sp o n se : tr = 5 jlls (typ.)


    OCR Scan
    PDF PN108CL

    1k88

    Abstract: PN3634 1R88 6N3P PNA4602M
    Text: I Phototransistors I PIN Photodiodes for AF, CD, VD, Optical Communications and Control II A p tr.tl e min. typ. lyp. typ. ( m A) (nm) (ns) (deg) PN3104 Flat (Clear) PSD 30 2 2 2 940 8 a 65 PN3106(N) Flat (Clear) PSD 30 2 13 940 5 u Flat (Clear) 2 PN3206


    OCR Scan
    PDF PN3104 PN3106 PN3206 PN312D PFES04-1N PFOS04-2N PN322D PN3105 PN3112 1k88 PN3634 1R88 6N3P PNA4602M

    PN126S

    Abstract: ON1503 PN7103
    Text: Photo Detectors/Photo Couplers • PIN Photodiodes for AF, CD, VD, Optical ■ Phototransistors Communications and Control A p tr.ti II Appli­ Package VB Id min. typ. typ. cations Type No. Construciton No. (V) max. (nA) (nm) (ns) PN312C(N) Flat (Clear) 2 division 037 30 20 10 900 10


    OCR Scan
    PDF PN312C PN312E PN3104 PN3106 PN3206 PN312D PN322D PN3105 PN3112 PN3108 PN126S ON1503 PN7103

    PN7103

    Abstract: pf204 mr03 C302 C5031 PNA4602M ON1501 PN334 PN106 PNA4602
    Text: Photo Detectors/Photo Couplers I Phototransistors I PIN Photodiodes for AF, CD, VD, Optical Communications and Control Appli cations Type No. Flat (Clear) 2 division PF204-3 PN3104 Flat (Clear) PSD PN3106(N) tr.tf typ. (ns) typ 10 PF004-5 22 940 8 Flat (Clear) PSD


    OCR Scan
    PDF PN101/102* PN101F/102F* ML02-1/ ML03-1 MF02-1/ PN312E PF204-3 PN3104 PFU04-5 PN106* PN7103 pf204 mr03 C302 C5031 PNA4602M ON1501 PN334 PN106 PNA4602

    bt35f

    Abstract: mf03 c PNA4602M
    Text: Photo Detectors/Photo Couplers I Phototransistors I PIN Photodiodes for AF, CD, VD, Optical Communications and Control Appli­ cations Type No. PN334 Flat (Clear) 2 division Flat (Clear) PSD Flat (Clear) PSD Flat (Clear) 2 division Flat (Viable light cut) 2 division


    OCR Scan
    PDF PN312E PN3104 PN3106 PN3206 PN312D PN322D PN3105 PN3112 PN3108 PN3107 bt35f mf03 c PNA4602M

    AN3962FB

    Abstract: MN1880023 mn19412 MN1874033 IC AN7135 an3814k MN1883214 an8294nsb mn4117405 mn171202
    Text: umb Type No. Page MOS L Type No. Page Type No. Page Type No. MN151614 43 MN1882417 45 ▲ MN151630 43 MN1882421 46 MN3204 MN3200 Series Page Type No. Page MN56000 Series 58 63 MN56020 58 68 • O M N 101C 01A 46 MN152810 43 MN188321 45 MN3205 68 MN56030


    OCR Scan
    PDF MN101C01C MN101C01D MN101C025 MN1020003 MN1020004A MN1020004AFB MN1020012A MN1020 12AFA MN1020015 AN3962FB MN1880023 mn19412 MN1874033 IC AN7135 an3814k MN1883214 an8294nsb mn4117405 mn171202

    09874

    Abstract: panasonic fk PN107F PN108CL PN108F 60N40 0F83 JW Electronic Systems
    Text: - PANASONIC INDL/ELEK-CSEMI} 72C D | 1,132054 0001073 3 6932852 PANASONIC INDLtELECTRONIC VOT'JWX ?2C 09873 * PN107F, PN108F PN 107F, PN108F '> U zi y NPN 7^ h Y =7 T-4I-W / S i NPN Phototransistors &SBfc$üffll$H!§ffl,/For Optical Control Systems • PN 107 F


    OCR Scan
    PDF b13Sfl54 0Dmfl73 PN107F, PN108F PN107F PN108F 75max 09874 panasonic fk PN107F PN108CL 60N40 0F83 JW Electronic Systems