Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . PIN Photodiodes PNZ323 (PN323) Silicon planar type For optical control systems Unit: mm 4.6±0.2 Chip Not soldered 1.5 max. (1.0) 5.5±0.2 (0.5) 1.5±0.2 (2-0.6±0.1) 22.25±1.0 31.25±1.0 (1.32)
|
Original
|
2002/95/EC)
PNZ323
PN323)
|
PDF
|
PNZ323B
Abstract: No abstract text available
Text: PIN Photodiodes PNZ323B PIN Photodiode Not soldered 1.5 max. 6.0±0.2 7.5±0.2 2 5.5±0.2 1.0 For optical control systems Unit : mm 4.6±0.2 2.3 Chip Features 22.25±1.0 High sensitivity, high reliability Peak sensitivity wavelength matched with infrared light emitting
|
Original
|
PNZ323B
PNZ323B
|
PDF
|
PN323
Abstract: PNZ323
Text: PIN Photodiodes PNZ323 PN323 Silicon planar type For optical control systems Unit: mm 4.6±0.2 Chip Not soldered 1.5 max. (1.0) 5.5±0.2 6.0±0.2 (0.5) 1.5±0.2 22.25±1.0 Ta = 25°C Rating Unit Reverse voltage VR 30 V Power dissipation PD 100 mW Operating ambient temperature
|
Original
|
PNZ323
PN323)
PN323
PNZ323
|
PDF
|
PN323B
Abstract: PNZ323B
Text: PIN Photodiodes PNZ323B PN323B Silicon planar type For optical control systems Unit: mm 4.6±0.2 Chip Not soldered 1.5 max. (1.0) 5.5±0.2 6.0±0.2 (0.5) 1.5±0.2 22.25±1.0 Ta = 25°C Rating Unit Reverse voltage VR 30 V Power dissipation PD 100 mW Operating ambient temperature
|
Original
|
PNZ323B
PN323B)
PN323B
PNZ323B
|
PDF
|
Untitled
Abstract: No abstract text available
Text: PIN Photodiodes PNZ323B PN323B Silicon planar type For optical control systems Unit: mm 4.6±0.2 Chip Not soldered 1.5 max. (1.0) 5.5±0.2 (0.5) 1.5±0.2 (2-0.6±0.1) 22.25±1.0 31.25±1.0 (1.32) Ta = 25°C (1.5) • Absolute Maximum Ratings 6.0±0.2 • Fast response which is well suited to high speed modulated light
|
Original
|
PNZ323B
PN323B)
|
PDF
|
Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . PIN Photodiodes PNZ323 (PN323) Silicon planar type For optical control systems Unit: mm 4.6±0.2 Chip Not soldered 1.5 max. (1.0) 5.5±0.2 6.0±0.2 (0.5) 1.5±0.2 22.25±1.0 Ta = 25°C Rating Unit
|
Original
|
2002/95/EC)
PNZ323
PN323)
|
PDF
|
PNZ323B application
Abstract: PN323B PNZ323B
Text: This product complies with the RoHS Directive EU 2002/95/EC . PIN Photodiodes PNZ323B (PN323B) Silicon planar type For optical control systems • Features ue pl d in ea an c se ed lud pl vi an m m es si tf ed ain ai fo ol t n l ht low disc dis ena ten low
|
Original
|
2002/95/EC)
PNZ323B
PN323B)
PNZ323B application
PN323B
PNZ323B
|
PDF
|
PNZ323
Abstract: PN323
Text: This product complies with the RoHS Directive EU 2002/95/EC . PIN Photodiodes PNZ323 (PN323) Silicon planar type For optical control systems • Features Fast response which is well suited to high speed modulated light detection: tr , tf = 50 ns (typ.)
|
Original
|
2002/95/EC)
PNZ323
PN323)
PNZ323
PN323
|
PDF
|
PN323B
Abstract: PNZ323B
Text: PIN Photodiodes PNZ323B PN323B PIN Photodiode Not soldered 1.5 max. 6.0±0.2 7.5±0.2 (2) 5.5±0.2 1.0 For optical control systems Unit : mm 4.6±0.2 2.3 Chip Features 22.25±1.0 High sensitivity, high reliability Peak sensitivity wavelength matched with infrared light emitting
|
Original
|
PNZ323B
PN323B)
PN323B
PNZ323B
|
PDF
|
Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . PIN Photodiodes PNZ323B (PN323B) Silicon planar type For optical control systems Unit: mm 4.6±0.2 Chip Not soldered 1.5 max. (1.0) 5.5±0.2 (0.5) 1.5±0.2 (2-0.6±0.1) 22.25±1.0 31.25±1.0 (1.32)
|
Original
|
2002/95/EC)
PNZ323B
PN323B)
|
PDF
|
PN323B
Abstract: PNZ323B
Text: This product complies with the RoHS Directive EU 2002/95/EC . PIN Photodiodes PNZ323B (PN323B) Silicon planar type For optical control systems • Features Fast response which is well suited to high speed modulated light detection: tr , tf = 50 ns (typ.)
|
Original
|
2002/95/EC)
PNZ323B
PN323B)
PN323B
PNZ323B
|
PDF
|
Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . PIN Photodiodes PNZ323B (PN323B) Silicon planar type For optical control systems Unit: mm 4.6±0.2 Chip Not soldered 1.5 max. (1.0) 5.5±0.2 6.0±0.2 (0.5) 1.5±0.2 22.25±1.0 Ta = 25°C Rating
|
Original
|
2002/95/EC)
PNZ323B
PN323B)
|
PDF
|
Untitled
Abstract: No abstract text available
Text: PIN Photodiodes PNZ323 PN323 Silicon planar type For optical control systems Unit: mm 4.6±0.2 Chip Not soldered 1.5 max. (1.0) 5.5±0.2 (0.5) 1.5±0.2 (2-0.6±0.1) 22.25±1.0 31.25±1.0 (1.32) Ta = 25°C (1.5) • Absolute Maximum Ratings 6.0±0.2 • Fast response which is well suited to high speed modulated light
|
Original
|
PNZ323
PN323)
|
PDF
|
Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . PIN Photodiodes PNZ323 (PN323) Silicon planar type For optical control systems • Features Absolute Maximum Ratings Ta = 25°C Parameter di p Pl lan nclu ea e se pla m d m des ne ain ain foll
|
Original
|
2002/95/EC)
PNZ323
PN323)
|
PDF
|
|
|
PN323
Abstract: PNZ323 3NA6
Text: PIN Photodiodes PNZ323 PN323 PIN Photodiode Not soldered 1.5 max. 6.0±0.2 7.5±0.2 (2) 5.5±0.2 1.0 For optical control systems Unit : mm 4.6±0.2 2.3 Chip Features 22.25±1.0 High sensitivity, high reliability Peak sensitivity wavelength matched with infrared light emitting
|
Original
|
PNZ323
PN323)
PN323
PNZ323
3NA6
|
PDF
|
PN323
Abstract: PNZ323
Text: This product complies with the RoHS Directive EU 2002/95/EC . PIN Photodiodes PNZ323 (PN323) Silicon planar type For optical control systems • Features ue pl d in ea an c se ed lud pl vi an m m es si tf ed ain ai fo ol t n l ht low disc dis ena ten low
|
Original
|
2002/95/EC)
PNZ323
PN323)
PN323
PNZ323
|
PDF
|
MIP2F3
Abstract: MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent
Text: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the
|
Original
|
PAMP13-N1
MIP2F3
MIP2F4
MIP382
MIP2E7DMY
mip2f2
mip291
MIP414S
MIP2E5DMY
mip411
MIP3E3SMY equivalent
|
PDF
|
PNJ4L01M
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . PNJ4L01M Photodiode with amplifier functions For infrared remote control systems • Features Center frequency fO : 36.7 kHz Operating supply voltage VCC : 3.3 V (typ.) Adoption of visible light cutoff resin
|
Original
|
2002/95/EC)
PNJ4L01M
PNJ4L01M
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Photo IC PNA4611M, PNA4613M, PNA4614M Photodiode with amplifier functions For infrared remote control systems Unit: mm 5.25±0.3 VCC Power dissipation PD Operating ambient temperature Topr Storage temperature Tstg 0.8 (5°) R2.25±0.1 (5°) 8.0±0.2 (5.2)
|
Original
|
PNA4611M,
PNA4613M,
PNA4614M
|
PDF
|
PNA4S06M
Abstract: PNZ323B
Text: Photo IC PNA4S06M Photodiode with amplifier functions For infrared remote control systems Unit: mm • Features Extension distance is 10 m or more External parts not required Reflow soldering support 1 – 0.5 to +5 V Power dissipation PD 200
|
Original
|
PNA4S06M
PNA4S06M
PNZ323B
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Photo IC PNA4S11M Series PNA4S11M/4S12M/4S13M/4S14M Bipolar Integrated Circuit with Photodetection Function For infrared remote control systems M Di ain sc te on na tin nc ue e/ d Unit : mm Features Surface-mounting type for reflow soldering 5.2 (2.6) Space saved by miniaturization
|
Original
|
PNA4S11M
PNA4S11M/4S12M/4S13M/4S14M)
PNA4S11M
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Photo IC PNA4610M Bipolar Integrated Circuit with Photodetection Function Unit: mm For infrared remote control systems 0.8 2.0±0.15 3-1.5±0.2 Symbol Rating Unit Power supply voltage VCC − 0.5 to +7 V Power dissipation PD 200 mW Operating ambient temperature
|
Original
|
PNA4610M
LSTLR103NC-001
|
PDF
|
Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Photo IC PNA461xM Series Photodiode with amplifier functions For infrared remote control systems Unit: mm VCC Unit − 0.5 to +7 V Power dissipation PD 200 mW Operating ambient temperature Topr
|
Original
|
2002/95/EC)
PNA461xM
|
PDF
|
PNJ4805M
Abstract: PNJ4805 PNZ323B
Text: This product complies with the RoHS Directive EU 2002/95/EC . PNJ4805M Photodiode with amplifier functions For infrared remote control systems • Features Center frequency fO : 38.0 kHz Operating supply voltage VCC : 3.3 V (typ.) Adoption of visible light cutoff resin
|
Original
|
2002/95/EC)
PNJ4805M
PNJ4805M
PNJ4805
PNZ323B
|
PDF
|
