PTF080901 Search Results

PTF080901 Datasheets (5)

Part	Manufacturer	Description	Datasheet Type	PDF
PTF080901	Infineon Technologies	LDMOS RF Power Field Effect Transistor 90 W, 869-960 MHz	Original	PDF
PTF080901AV1	Infineon Technologies	Transistor Mosfet N-CH 65V	Original	PDF
PTF080901E	Infineon Technologies	LDMOS RF Power Field Effect Transistor 90 W, 869-960 MHz	Original	PDF
PTF080901F	Infineon Technologies	LDMOS RF Power Field Effect Transistor 90 W, 869-960 MHz	Original	PDF
PTF080901FV1	Infineon Technologies	Transistor Mosfet N-CH 65V 2(31248)	Original	PDF

PTF080901 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
LM7805 Abstract: LM7805 smd 8 pin PTF080901 PTF080901E marking us capacitor pf l1 philips smd 1206 resistor SMD 1206 RESISTOR 100 OHMS smd marking f2 smd marking l5 transistor smd marking ND Text: PTF080901 LDMOS RF Power Field Effect Transistor 90 W, 869–960 MHz Description Features The PTF080901 is a 90 W, internally matched GOLDMOS FET intended for EDGE and CDMA applications in the 860 to 960 MHz band. Full gold metallization ensures excellent device lifetime and reliability.	Original	PDF	PTF080901 PTF080901 LM7805 LM7805 smd 8 pin PTF080901E marking us capacitor pf l1 philips smd 1206 resistor SMD 1206 RESISTOR 100 OHMS smd marking f2 smd marking l5 transistor smd marking ND
DD 127 D TRANSISTOR Abstract: A90W ptf080901e Text: PTF080901 LDMOS RF Power Field Effect Transistor 90 W, 869–960 MHz Description Features The PTF080901 is a 90 W, internally matched GOLDMOS FET intended for EDGE and CDMA applications in the 860 to 960 MHz band. Full gold metallization ensures excellent device lifetime and reliability.	Original	PDF	PTF080901 PTF080901 DD 127 D TRANSISTOR A90W ptf080901e
PTF080901A Abstract: 080901E smd marking PTF ptf080901e resistor 1 ohms philips resistor LDMOS 90W Text: Preliminary PTF 080901 LDMOS RF Power Field Effect Transistor 90 W, 860–960 MHz Description Key Features The PTF 080901 is a 90–W, internally matched GOLDMOS FET intended for EDGE and CDMA applications in the 860 to 960 MHz band. Full gold metallization ensures excellent device lifetime and reliability.	Original	PDF

Catalog Datasheet

MFG & Type

PDF

Document Tags

LM7805

Abstract: LM7805 smd 8 pin PTF080901 PTF080901E marking us capacitor pf l1 philips smd 1206 resistor SMD 1206 RESISTOR 100 OHMS smd marking f2 smd marking l5 transistor smd marking ND
Text: PTF080901 LDMOS RF Power Field Effect Transistor 90 W, 869–960 MHz Description Features The PTF080901 is a 90 W, internally matched GOLDMOS FET intended for EDGE and CDMA applications in the 860 to 960 MHz band. Full gold metallization ensures excellent device lifetime and reliability.

Original

PDF

PTF080901 PTF080901 LM7805 LM7805 smd 8 pin PTF080901E marking us capacitor pf l1 philips smd 1206 resistor SMD 1206 RESISTOR 100 OHMS smd marking f2 smd marking l5 transistor smd marking ND

DD 127 D TRANSISTOR

Abstract: A90W ptf080901e
Text: PTF080901 LDMOS RF Power Field Effect Transistor 90 W, 869–960 MHz Description Features The PTF080901 is a 90 W, internally matched GOLDMOS FET intended for EDGE and CDMA applications in the 860 to 960 MHz band. Full gold metallization ensures excellent device lifetime and reliability.

Original

PDF

PTF080901 PTF080901 DD 127 D TRANSISTOR A90W ptf080901e

PTF080901A

Abstract: 080901E smd marking PTF ptf080901e resistor 1 ohms philips resistor LDMOS 90W
Text: Preliminary PTF 080901 LDMOS RF Power Field Effect Transistor 90 W, 860–960 MHz Description Key Features The PTF 080901 is a 90–W, internally matched GOLDMOS FET intended for EDGE and CDMA applications in the 860 to 960 MHz band. Full gold metallization ensures excellent device lifetime and reliability.

Original

PDF